JP2004039765A5 - - Google Patents

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Publication number
JP2004039765A5
JP2004039765A5 JP2002192852A JP2002192852A JP2004039765A5 JP 2004039765 A5 JP2004039765 A5 JP 2004039765A5 JP 2002192852 A JP2002192852 A JP 2002192852A JP 2002192852 A JP2002192852 A JP 2002192852A JP 2004039765 A5 JP2004039765 A5 JP 2004039765A5
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JP
Japan
Prior art keywords
thin film
circuit
insulating substrate
single crystal
semiconductor device
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2002192852A
Other languages
English (en)
Japanese (ja)
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JP2004039765A (ja
JP4329312B2 (ja
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Publication date
Application filed filed Critical
Priority claimed from JP2002192852A external-priority patent/JP4329312B2/ja
Priority to JP2002192852A priority Critical patent/JP4329312B2/ja
Priority to TW092103932A priority patent/TWI266371B/zh
Priority to US10/372,809 priority patent/US6847069B2/en
Priority to KR1020030012276A priority patent/KR100998148B1/ko
Priority to CNB031199097A priority patent/CN100456497C/zh
Publication of JP2004039765A publication Critical patent/JP2004039765A/ja
Priority to US11/004,858 priority patent/US7084020B2/en
Publication of JP2004039765A5 publication Critical patent/JP2004039765A5/ja
Publication of JP4329312B2 publication Critical patent/JP4329312B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002192852A 2002-07-02 2002-07-02 薄膜半導体装置、その製造方法及び画像表示装置 Expired - Fee Related JP4329312B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002192852A JP4329312B2 (ja) 2002-07-02 2002-07-02 薄膜半導体装置、その製造方法及び画像表示装置
TW092103932A TWI266371B (en) 2002-07-02 2003-02-25 Thin-film semiconductor device, manufacturing method of the same and image display apparatus
US10/372,809 US6847069B2 (en) 2002-07-02 2003-02-26 Thin-film semiconductor device, manufacturing method of the same and image display apparatus
KR1020030012276A KR100998148B1 (ko) 2002-07-02 2003-02-27 박막 반도체 장치 및 그 제조 방법과 화상 표시 장치
CNB031199097A CN100456497C (zh) 2002-07-02 2003-02-28 薄膜半导体器件
US11/004,858 US7084020B2 (en) 2002-07-02 2004-12-07 Manufacturing method of a thin-film semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002192852A JP4329312B2 (ja) 2002-07-02 2002-07-02 薄膜半導体装置、その製造方法及び画像表示装置

Publications (3)

Publication Number Publication Date
JP2004039765A JP2004039765A (ja) 2004-02-05
JP2004039765A5 true JP2004039765A5 (enExample) 2005-10-20
JP4329312B2 JP4329312B2 (ja) 2009-09-09

Family

ID=29996983

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002192852A Expired - Fee Related JP4329312B2 (ja) 2002-07-02 2002-07-02 薄膜半導体装置、その製造方法及び画像表示装置

Country Status (5)

Country Link
US (2) US6847069B2 (enExample)
JP (1) JP4329312B2 (enExample)
KR (1) KR100998148B1 (enExample)
CN (1) CN100456497C (enExample)
TW (1) TWI266371B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7732334B2 (en) * 2004-08-23 2010-06-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101219749B1 (ko) * 2004-10-22 2013-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
JP2006128233A (ja) 2004-10-27 2006-05-18 Hitachi Ltd 半導体材料および電界効果トランジスタとそれらの製造方法
KR100570219B1 (ko) * 2004-12-23 2006-04-12 주식회사 하이닉스반도체 반도체 소자의 체인 게이트 라인 및 그 제조 방법
JP2006261188A (ja) * 2005-03-15 2006-09-28 Seiko Epson Corp 半導体装置の製造方法及び半導体装置
US8022408B2 (en) 2005-05-13 2011-09-20 Samsung Electronics Co., Ltd. Crystalline nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the same
KR101127132B1 (ko) * 2005-05-13 2012-03-21 삼성전자주식회사 실리콘 나노와이어 기판 및 그 제조방법, 그리고 이를이용한 박막 트랜지스터의 제조방법
JP4850452B2 (ja) * 2005-08-08 2012-01-11 株式会社 日立ディスプレイズ 画像表示装置
CN100536117C (zh) * 2006-12-07 2009-09-02 广富群光电股份有限公司 薄膜晶体管面板的制造方法
US20090250700A1 (en) * 2008-04-08 2009-10-08 Themistokles Afentakis Crystalline Semiconductor Stripe Transistor
US20090250791A1 (en) * 2008-04-08 2009-10-08 Themistokles Afentakis Crystalline Semiconductor Stripes
JP5669439B2 (ja) * 2010-05-21 2015-02-12 株式会社半導体エネルギー研究所 半導体基板の作製方法
CN102280474B (zh) * 2010-06-09 2014-02-19 尹海洲 一种igbt器件及其制造方法
GB201310854D0 (en) 2013-06-18 2013-07-31 Isis Innovation Photoactive layer production process
JP6857517B2 (ja) * 2016-06-16 2021-04-14 ディフテック レーザーズ インコーポレイテッド 基板上に結晶アイランドを製造する方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3213338B2 (ja) * 1991-05-15 2001-10-02 株式会社リコー 薄膜半導体装置の製法
TW226478B (en) * 1992-12-04 1994-07-11 Semiconductor Energy Res Co Ltd Semiconductor device and method for manufacturing the same
JP3450376B2 (ja) * 1993-06-12 2003-09-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH08316485A (ja) * 1995-05-12 1996-11-29 Fuji Xerox Co Ltd 半導体結晶の形成方法及びこれを用いた半導体装置の製造方法
JP3550805B2 (ja) * 1995-06-09 2004-08-04 ソニー株式会社 薄膜半導体装置の製造方法
JPH10289876A (ja) * 1997-04-16 1998-10-27 Hitachi Ltd レーザ結晶化方法及びそれを用いた半導体装置並びに応用機器
JPH11121753A (ja) 1997-10-14 1999-04-30 Hitachi Ltd 半導体装置及びその製造方法
JP2000243970A (ja) 1999-02-24 2000-09-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタとその製造方法及びそれを用いた液晶表示装置とその製造方法
US6271101B1 (en) * 1998-07-29 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Process for production of SOI substrate and process for production of semiconductor device
TW517260B (en) * 1999-05-15 2003-01-11 Semiconductor Energy Lab Semiconductor device and method for its fabrication
JP2001345451A (ja) * 2000-05-30 2001-12-14 Hitachi Ltd 薄膜半導体集積回路装置、それを用いた画像表示装置、及びその製造方法
US6580122B1 (en) * 2001-03-20 2003-06-17 Advanced Micro Devices, Inc. Transistor device having an enhanced width dimension and a method of making same
US6692999B2 (en) * 2001-06-26 2004-02-17 Fujitsu Limited Polysilicon film forming method

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