TWI266371B - Thin-film semiconductor device, manufacturing method of the same and image display apparatus - Google Patents
Thin-film semiconductor device, manufacturing method of the same and image display apparatus Download PDFInfo
- Publication number
- TWI266371B TWI266371B TW092103932A TW92103932A TWI266371B TW I266371 B TWI266371 B TW I266371B TW 092103932 A TW092103932 A TW 092103932A TW 92103932 A TW92103932 A TW 92103932A TW I266371 B TWI266371 B TW I266371B
- Authority
- TW
- Taiwan
- Prior art keywords
- thin film
- single crystal
- region
- film
- semiconductor device
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 88
- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000010408 film Substances 0.000 claims abstract description 149
- 239000013078 crystal Substances 0.000 claims abstract description 136
- 239000000758 substrate Substances 0.000 claims description 72
- 238000000034 method Methods 0.000 claims description 24
- 230000002093 peripheral effect Effects 0.000 claims description 11
- 238000000059 patterning Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 4
- 241000282326 Felis catus Species 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000004891 communication Methods 0.000 claims description 2
- 238000005070 sampling Methods 0.000 claims description 2
- 238000007493 shaping process Methods 0.000 claims description 2
- 238000010408 sweeping Methods 0.000 claims description 2
- 230000002496 gastric effect Effects 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 description 52
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 52
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 18
- 229910052707 ruthenium Inorganic materials 0.000 description 18
- 229910052715 tantalum Inorganic materials 0.000 description 12
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 12
- 238000002425 crystallisation Methods 0.000 description 10
- 230000008025 crystallization Effects 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000007787 solid Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 239000004576 sand Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000002003 electron diffraction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
- H10D62/405—Orientations of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
- H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
- H10D30/6744—Monocrystalline silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
- H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
- H10D86/0227—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using structural arrangements to control crystal growth, e.g. placement of grain filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
- H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
- H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002192852A JP4329312B2 (ja) | 2002-07-02 | 2002-07-02 | 薄膜半導体装置、その製造方法及び画像表示装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200401366A TW200401366A (en) | 2004-01-16 |
| TWI266371B true TWI266371B (en) | 2006-11-11 |
Family
ID=29996983
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092103932A TWI266371B (en) | 2002-07-02 | 2003-02-25 | Thin-film semiconductor device, manufacturing method of the same and image display apparatus |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6847069B2 (enExample) |
| JP (1) | JP4329312B2 (enExample) |
| KR (1) | KR100998148B1 (enExample) |
| CN (1) | CN100456497C (enExample) |
| TW (1) | TWI266371B (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7732334B2 (en) * | 2004-08-23 | 2010-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR101219749B1 (ko) * | 2004-10-22 | 2013-01-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
| JP2006128233A (ja) | 2004-10-27 | 2006-05-18 | Hitachi Ltd | 半導体材料および電界効果トランジスタとそれらの製造方法 |
| KR100570219B1 (ko) * | 2004-12-23 | 2006-04-12 | 주식회사 하이닉스반도체 | 반도체 소자의 체인 게이트 라인 및 그 제조 방법 |
| JP2006261188A (ja) * | 2005-03-15 | 2006-09-28 | Seiko Epson Corp | 半導体装置の製造方法及び半導体装置 |
| US8022408B2 (en) | 2005-05-13 | 2011-09-20 | Samsung Electronics Co., Ltd. | Crystalline nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the same |
| KR101127132B1 (ko) * | 2005-05-13 | 2012-03-21 | 삼성전자주식회사 | 실리콘 나노와이어 기판 및 그 제조방법, 그리고 이를이용한 박막 트랜지스터의 제조방법 |
| JP4850452B2 (ja) * | 2005-08-08 | 2012-01-11 | 株式会社 日立ディスプレイズ | 画像表示装置 |
| CN100536117C (zh) * | 2006-12-07 | 2009-09-02 | 广富群光电股份有限公司 | 薄膜晶体管面板的制造方法 |
| US20090250700A1 (en) * | 2008-04-08 | 2009-10-08 | Themistokles Afentakis | Crystalline Semiconductor Stripe Transistor |
| US20090250791A1 (en) * | 2008-04-08 | 2009-10-08 | Themistokles Afentakis | Crystalline Semiconductor Stripes |
| JP5669439B2 (ja) * | 2010-05-21 | 2015-02-12 | 株式会社半導体エネルギー研究所 | 半導体基板の作製方法 |
| CN102280474B (zh) * | 2010-06-09 | 2014-02-19 | 尹海洲 | 一种igbt器件及其制造方法 |
| GB201310854D0 (en) | 2013-06-18 | 2013-07-31 | Isis Innovation | Photoactive layer production process |
| JP6857517B2 (ja) * | 2016-06-16 | 2021-04-14 | ディフテック レーザーズ インコーポレイテッド | 基板上に結晶アイランドを製造する方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3213338B2 (ja) * | 1991-05-15 | 2001-10-02 | 株式会社リコー | 薄膜半導体装置の製法 |
| TW226478B (en) * | 1992-12-04 | 1994-07-11 | Semiconductor Energy Res Co Ltd | Semiconductor device and method for manufacturing the same |
| JP3450376B2 (ja) * | 1993-06-12 | 2003-09-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JPH08316485A (ja) * | 1995-05-12 | 1996-11-29 | Fuji Xerox Co Ltd | 半導体結晶の形成方法及びこれを用いた半導体装置の製造方法 |
| JP3550805B2 (ja) * | 1995-06-09 | 2004-08-04 | ソニー株式会社 | 薄膜半導体装置の製造方法 |
| JPH10289876A (ja) * | 1997-04-16 | 1998-10-27 | Hitachi Ltd | レーザ結晶化方法及びそれを用いた半導体装置並びに応用機器 |
| JPH11121753A (ja) | 1997-10-14 | 1999-04-30 | Hitachi Ltd | 半導体装置及びその製造方法 |
| JP2000243970A (ja) | 1999-02-24 | 2000-09-08 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタとその製造方法及びそれを用いた液晶表示装置とその製造方法 |
| US6271101B1 (en) * | 1998-07-29 | 2001-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Process for production of SOI substrate and process for production of semiconductor device |
| TW517260B (en) * | 1999-05-15 | 2003-01-11 | Semiconductor Energy Lab | Semiconductor device and method for its fabrication |
| JP2001345451A (ja) * | 2000-05-30 | 2001-12-14 | Hitachi Ltd | 薄膜半導体集積回路装置、それを用いた画像表示装置、及びその製造方法 |
| US6580122B1 (en) * | 2001-03-20 | 2003-06-17 | Advanced Micro Devices, Inc. | Transistor device having an enhanced width dimension and a method of making same |
| US6692999B2 (en) * | 2001-06-26 | 2004-02-17 | Fujitsu Limited | Polysilicon film forming method |
-
2002
- 2002-07-02 JP JP2002192852A patent/JP4329312B2/ja not_active Expired - Fee Related
-
2003
- 2003-02-25 TW TW092103932A patent/TWI266371B/zh not_active IP Right Cessation
- 2003-02-26 US US10/372,809 patent/US6847069B2/en not_active Expired - Fee Related
- 2003-02-27 KR KR1020030012276A patent/KR100998148B1/ko not_active Expired - Fee Related
- 2003-02-28 CN CNB031199097A patent/CN100456497C/zh not_active Expired - Fee Related
-
2004
- 2004-12-07 US US11/004,858 patent/US7084020B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20040005747A1 (en) | 2004-01-08 |
| CN100456497C (zh) | 2009-01-28 |
| KR20040004039A (ko) | 2004-01-13 |
| TW200401366A (en) | 2004-01-16 |
| JP2004039765A (ja) | 2004-02-05 |
| KR100998148B1 (ko) | 2010-12-02 |
| US6847069B2 (en) | 2005-01-25 |
| JP4329312B2 (ja) | 2009-09-09 |
| US7084020B2 (en) | 2006-08-01 |
| US20050095822A1 (en) | 2005-05-05 |
| CN1467859A (zh) | 2004-01-14 |
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