JP2004012932A - マスクの製造方法、露光方法及びデバイス製造方法 - Google Patents

マスクの製造方法、露光方法及びデバイス製造方法 Download PDF

Info

Publication number
JP2004012932A
JP2004012932A JP2002167769A JP2002167769A JP2004012932A JP 2004012932 A JP2004012932 A JP 2004012932A JP 2002167769 A JP2002167769 A JP 2002167769A JP 2002167769 A JP2002167769 A JP 2002167769A JP 2004012932 A JP2004012932 A JP 2004012932A
Authority
JP
Japan
Prior art keywords
pattern
mask
desired pattern
auxiliary
size
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002167769A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004012932A5 (enrdf_load_stackoverflow
Inventor
Kenji Yamazoe
山添　賢治
Kenji Saito
斉藤　謙治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2002167769A priority Critical patent/JP2004012932A/ja
Priority to EP02256555A priority patent/EP1357426A3/en
Priority to TW091121661A priority patent/TWI315027B/zh
Priority to US10/251,581 priority patent/US7107573B2/en
Priority to KR10-2002-0067238A priority patent/KR100533145B1/ko
Publication of JP2004012932A publication Critical patent/JP2004012932A/ja
Priority to KR1020050075017A priority patent/KR100633461B1/ko
Publication of JP2004012932A5 publication Critical patent/JP2004012932A5/ja
Pending legal-status Critical Current

Links

Images

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2002167769A 2002-04-23 2002-06-07 マスクの製造方法、露光方法及びデバイス製造方法 Pending JP2004012932A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002167769A JP2004012932A (ja) 2002-06-07 2002-06-07 マスクの製造方法、露光方法及びデバイス製造方法
EP02256555A EP1357426A3 (en) 2002-04-23 2002-09-20 Method for setting mask pattern and its illumination condition
TW091121661A TWI315027B (en) 2002-04-23 2002-09-20 Mask designing method, and exposure method for illuminatiing a mask and exposing an object
US10/251,581 US7107573B2 (en) 2002-04-23 2002-09-20 Method for setting mask pattern and illumination condition
KR10-2002-0067238A KR100533145B1 (ko) 2002-04-23 2002-10-31 마스크패턴 및 그 조명조건의 설정방법
KR1020050075017A KR100633461B1 (ko) 2002-04-23 2005-08-17 마스크패턴 및 그 조명조건의 설정방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002167769A JP2004012932A (ja) 2002-06-07 2002-06-07 マスクの製造方法、露光方法及びデバイス製造方法

Publications (2)

Publication Number Publication Date
JP2004012932A true JP2004012932A (ja) 2004-01-15
JP2004012932A5 JP2004012932A5 (enrdf_load_stackoverflow) 2005-10-13

Family

ID=30434919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002167769A Pending JP2004012932A (ja) 2002-04-23 2002-06-07 マスクの製造方法、露光方法及びデバイス製造方法

Country Status (1)

Country Link
JP (1) JP2004012932A (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006220837A (ja) * 2005-02-09 2006-08-24 Sony Corp フォトマスクの製造方法、および、半導体デバイスの製造方法
JP2007034207A (ja) * 2005-07-29 2007-02-08 Canon Inc マスク作成方法及びマスクパターン設計装置
JP2009229669A (ja) * 2008-03-21 2009-10-08 Renesas Technology Corp フォトマスク、そのフォトマスクを有する半導体装置の製造装置、およびそのフォトマスクを用いた半導体装置の製造方法
JP2010020187A (ja) * 2008-07-11 2010-01-28 Canon Inc 生成方法、原版作成方法、露光方法、デバイス製造方法及びプログラム
JP2011151423A (ja) * 2004-02-03 2011-08-04 Mentor Graphics Corp イメージの忠実度およびスループットに対する光源の最適化
JP2012212154A (ja) * 2005-04-26 2012-11-01 Renesas Electronics Corp 半導体装置の製造方法
KR101427983B1 (ko) * 2007-05-25 2014-09-23 구완회 얼라인먼트 방법 및 장치
CN114236969A (zh) * 2021-11-12 2022-03-25 京东方科技集团股份有限公司 一种曝光检测方法及装置

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9323161B2 (en) 2004-02-03 2016-04-26 Mentor Graphics Corporation Source optimization by assigning pixel intensities for diffractive optical element using mathematical relationship
JP2011151423A (ja) * 2004-02-03 2011-08-04 Mentor Graphics Corp イメージの忠実度およびスループットに対する光源の最適化
US10248028B2 (en) 2004-02-03 2019-04-02 Mentor Graphics Corporation Source optimization for image fidelity and throughput
JP2006220837A (ja) * 2005-02-09 2006-08-24 Sony Corp フォトマスクの製造方法、および、半導体デバイスの製造方法
JP2012212154A (ja) * 2005-04-26 2012-11-01 Renesas Electronics Corp 半導体装置の製造方法
US8719740B2 (en) 2005-04-26 2014-05-06 Renesas Electronics Corporation Semiconductor device which is subjected to optical proximity correction
JP2015028636A (ja) * 2005-04-26 2015-02-12 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2007034207A (ja) * 2005-07-29 2007-02-08 Canon Inc マスク作成方法及びマスクパターン設計装置
KR101427983B1 (ko) * 2007-05-25 2014-09-23 구완회 얼라인먼트 방법 및 장치
JP2009229669A (ja) * 2008-03-21 2009-10-08 Renesas Technology Corp フォトマスク、そのフォトマスクを有する半導体装置の製造装置、およびそのフォトマスクを用いた半導体装置の製造方法
JP2010020187A (ja) * 2008-07-11 2010-01-28 Canon Inc 生成方法、原版作成方法、露光方法、デバイス製造方法及びプログラム
US8365106B2 (en) 2008-07-11 2013-01-29 Canon Kabushiki Kaisha Method for optimization of light effective source while target pattern is changed
CN114236969A (zh) * 2021-11-12 2022-03-25 京东方科技集团股份有限公司 一种曝光检测方法及装置

Similar Documents

Publication Publication Date Title
KR100633461B1 (ko) 마스크패턴 및 그 조명조건의 설정방법
US7512928B2 (en) Sub-resolution assist feature to improve symmetry for contact hole lithography
US7318214B1 (en) System and method for reducing patterning variability in integrated circuit manufacturing through mask layout corrections
JP3266499B2 (ja) 光学的近接補正方法及びシステム
KR100571623B1 (ko) 마스크 및 그의 제조방법, 노광방법, 그리고 디바이스의제조방법
US7814456B2 (en) Method and system for topography-aware reticle enhancement
US6178360B1 (en) Methods and apparatus for determining optimum exposure threshold for a given photolithographic model
US6622296B2 (en) Exposure mask pattern correction method, pattern formation method, and a program product for operating a computer
JP4852083B2 (ja) パタンデータの作成方法およびパタンデータ作成プログラム
JP5686567B2 (ja) 露光条件及びマスクパターンを決定するプログラム及び方法
JP5677356B2 (ja) マスクパターンの生成方法
JP2004320004A (ja) 集積回路の重ね合せ不良を予測するためのモンテカルロ・シミュレーションを行う方法
JP2004012932A (ja) マスクの製造方法、露光方法及びデバイス製造方法
JP3977544B2 (ja) 半導体装置の回路設計方法およびプログラム記憶媒体
US12406130B2 (en) Geometric mask rule check with favorable and unfavorable zones
JP3754934B2 (ja) マスクパターン及び照明条件の設定方法
JP2004163472A (ja) フォトマスクの設計方法、フォトマスク、及び半導体装置
CN115903367A (zh) 添加sraf的方法、掩模版及制造方法
JP2008020734A (ja) 半導体装置の設計パターン作成方法、プログラム、及び半導体装置の製造方法
JP2008191364A (ja) マスクパターンの設計方法
JP2000305247A (ja) フォトマスク、パターン形成方法及びデバイス製造方法
KR101096979B1 (ko) 반도체 소자의 패턴 균일도 조절 방법
US6413685B1 (en) Method of reducing optical proximity effect
KR100688893B1 (ko) 반도체 소자의 마스크 패턴 형성 방법
JP2005072309A (ja) マスクパターン補正方法、露光用マスクおよびマスク製造方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050606

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050606

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080522

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080527

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080728

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090203