JP2004006598A5 - - Google Patents

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Publication number
JP2004006598A5
JP2004006598A5 JP2002298838A JP2002298838A JP2004006598A5 JP 2004006598 A5 JP2004006598 A5 JP 2004006598A5 JP 2002298838 A JP2002298838 A JP 2002298838A JP 2002298838 A JP2002298838 A JP 2002298838A JP 2004006598 A5 JP2004006598 A5 JP 2004006598A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2002298838A
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JP2004006598A (ja
JP3935042B2 (ja
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Priority claimed from JP2002298838A external-priority patent/JP3935042B2/ja
Priority to JP2002298838A priority Critical patent/JP3935042B2/ja
Priority to US10/321,613 priority patent/US6700156B2/en
Priority to TW092108822A priority patent/TWI246773B/zh
Priority to KR1020030026418A priority patent/KR100564895B1/ko
Priority to CNB031306160A priority patent/CN1231978C/zh
Publication of JP2004006598A publication Critical patent/JP2004006598A/ja
Publication of JP2004006598A5 publication Critical patent/JP2004006598A5/ja
Publication of JP3935042B2 publication Critical patent/JP3935042B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002298838A 2002-04-26 2002-10-11 絶縁ゲート型半導体装置 Expired - Fee Related JP3935042B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2002298838A JP3935042B2 (ja) 2002-04-26 2002-10-11 絶縁ゲート型半導体装置
US10/321,613 US6700156B2 (en) 2002-04-26 2002-12-18 Insulated gate semiconductor device
TW092108822A TWI246773B (en) 2002-04-26 2003-04-16 Insulation gate type semiconductor device
KR1020030026418A KR100564895B1 (ko) 2002-04-26 2003-04-25 절연게이트형 반도체장치
CNB031306160A CN1231978C (zh) 2002-04-26 2003-04-28 绝缘栅型半导体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002127334 2002-04-26
JP2002298838A JP3935042B2 (ja) 2002-04-26 2002-10-11 絶縁ゲート型半導体装置

Publications (3)

Publication Number Publication Date
JP2004006598A JP2004006598A (ja) 2004-01-08
JP2004006598A5 true JP2004006598A5 (ja) 2006-03-02
JP3935042B2 JP3935042B2 (ja) 2007-06-20

Family

ID=29272379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002298838A Expired - Fee Related JP3935042B2 (ja) 2002-04-26 2002-10-11 絶縁ゲート型半導体装置

Country Status (4)

Country Link
JP (1) JP3935042B2 (ja)
KR (1) KR100564895B1 (ja)
CN (1) CN1231978C (ja)
TW (1) TWI246773B (ja)

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JP4832731B2 (ja) * 2004-07-07 2011-12-07 株式会社東芝 電力用半導体装置
US7265415B2 (en) * 2004-10-08 2007-09-04 Fairchild Semiconductor Corporation MOS-gated transistor with reduced miller capacitance
JP4627272B2 (ja) * 2006-03-09 2011-02-09 三菱電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
DE102007013824B4 (de) * 2006-03-22 2013-10-24 Denso Corporation Schaltkreis mit einem Transistor
JP5061538B2 (ja) * 2006-09-01 2012-10-31 株式会社デンソー 半導体装置
US7476591B2 (en) * 2006-10-13 2009-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Lateral power MOSFET with high breakdown voltage and low on-resistance
KR100832718B1 (ko) * 2006-12-27 2008-05-28 동부일렉트로닉스 주식회사 트랜치 게이트 모스 소자 및 그 제조 방법
JP5040387B2 (ja) 2007-03-20 2012-10-03 株式会社デンソー 半導体装置
JP5119806B2 (ja) * 2007-08-27 2013-01-16 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
DE112009000535B4 (de) 2008-03-07 2013-08-01 Mitsubishi Electric Corp. Siliziumkarbid-Halbleitervorrichtung und Verfahren zu deren Herstellung
US7982253B2 (en) * 2008-08-01 2011-07-19 Infineon Technologies Austria Ag Semiconductor device with a dynamic gate-drain capacitance
US8039897B2 (en) * 2008-12-19 2011-10-18 Fairchild Semiconductor Corporation Lateral MOSFET with substrate drain connection
JP5462020B2 (ja) * 2009-06-09 2014-04-02 株式会社東芝 電力用半導体素子
US9312330B2 (en) * 2009-07-15 2016-04-12 Fuji Electric Co., Ltd. Super-junction semiconductor device
JP5665567B2 (ja) 2011-01-26 2015-02-04 株式会社東芝 半導体素子
JP2015128184A (ja) * 2011-03-10 2015-07-09 株式会社東芝 半導体装置
JP5680460B2 (ja) * 2011-03-23 2015-03-04 株式会社東芝 電力用半導体装置
CN102856193B (zh) * 2011-06-27 2015-05-13 中国科学院微电子研究所 Igbt器件及其制作方法
CN102856192B (zh) * 2011-06-27 2015-05-13 中国科学院微电子研究所 Igbt器件及其制作方法
JP6278549B2 (ja) * 2012-03-30 2018-02-14 富士電機株式会社 半導体装置
US9240476B2 (en) * 2013-03-13 2016-01-19 Cree, Inc. Field effect transistor devices with buried well regions and epitaxial layers
US9142668B2 (en) 2013-03-13 2015-09-22 Cree, Inc. Field effect transistor devices with buried well protection regions
US9214572B2 (en) 2013-09-20 2015-12-15 Monolith Semiconductor Inc. High voltage MOSFET devices and methods of making the devices
US9991376B2 (en) 2013-09-20 2018-06-05 Monolith Semiconductor Inc. High voltage MOSFET devices and methods of making the devices
CN106533163A (zh) * 2016-01-22 2017-03-22 东莞市清能光伏科技有限公司 光伏功率转换器
JP6977273B2 (ja) * 2016-06-16 2021-12-08 富士電機株式会社 半導体装置および製造方法
DE112018002873T5 (de) * 2017-06-06 2020-02-27 Mitsubishi Electric Corporation Halbleitereinheit und leistungswandler
US10424660B2 (en) * 2017-12-21 2019-09-24 Cree, Inc. Power silicon carbide based MOSFET transistors with improved short circuit capabilities and methods of making such devices
JP7029364B2 (ja) 2018-08-20 2022-03-03 株式会社東芝 半導体装置

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Publication number Priority date Publication date Assignee Title
JPS5550661A (en) * 1978-10-07 1980-04-12 Mitsubishi Electric Corp Insulated gate type field effect semiconductor device
JPS60258967A (ja) * 1984-06-05 1985-12-20 Nippon Telegr & Teleph Corp <Ntt> 絶縁ゲ−ト型電界効果トランジスタ
JPS6442177A (en) * 1987-08-10 1989-02-14 Hitachi Ltd Insulated gate transistor
JPH01293669A (ja) * 1988-05-23 1989-11-27 Nec Corp 縦型ｍｏｓ電界効果トランジスタ
JPH06283718A (ja) * 1993-03-30 1994-10-07 Nec Kansai Ltd Ｍｏｓ型半導体装置
JPH09213939A (ja) * 1996-01-30 1997-08-15 Nec Corp 半導体装置
JP2000512808A (ja) * 1996-06-19 2000-09-26 エービービー リサーチ リミテッド 電圧制御型半導体装置にチャンネル領域層を作るための方法
JP3460585B2 (ja) * 1998-07-07 2003-10-27 富士電機株式会社 炭化けい素ｍｏｓ半導体素子の製造方法
JP4830184B2 (ja) * 1999-08-04 2011-12-07 富士電機株式会社 半導体装置の製造方法
KR20010040186A (ko) * 1999-10-27 2001-05-15 인터실 코포레이션 디모스, 절연게이트 바이폴라 트랜지스터, 및 금속 산화막반도체 전계 효과 트랜지스터 등의 전력 모스 소자의게이트 전하 및 게이트/드레인 정전용량 최소화기술
JP3740008B2 (ja) * 2000-10-11 2006-01-25 株式会社日立製作所 車載イグナイタ、絶縁ゲート半導体装置及びエンジンシステム

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