JP2003519924A - 信号処理時間が減じられた半導体装置およびその製造方法 - Google Patents

信号処理時間が減じられた半導体装置およびその製造方法

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Publication number
JP2003519924A
JP2003519924A JP2001550807A JP2001550807A JP2003519924A JP 2003519924 A JP2003519924 A JP 2003519924A JP 2001550807 A JP2001550807 A JP 2001550807A JP 2001550807 A JP2001550807 A JP 2001550807A JP 2003519924 A JP2003519924 A JP 2003519924A
Authority
JP
Japan
Prior art keywords
layer
density
silicon
porous
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001550807A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003519924A5 (https=
Inventor
ホルストマン，マンフレート
ビーチョレック，カルステン
ブーアバッハ，ゲルト
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of JP2003519924A publication Critical patent/JP2003519924A/ja
Publication of JP2003519924A5 publication Critical patent/JP2003519924A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/072—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/075—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers of multilayered thin functional dielectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/097—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by thermally treating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/46—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2001550807A 2000-01-05 2000-07-31 信号処理時間が減じられた半導体装置およびその製造方法 Pending JP2003519924A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/475,572 2000-01-05
US09/475,572 US6541863B1 (en) 2000-01-05 2000-01-05 Semiconductor device having a reduced signal processing time and a method of fabricating the same
PCT/US2000/020886 WO2001050527A1 (en) 2000-01-05 2000-07-31 A semiconductor device having a reduced signal processing time and a method of fabricating the same

Publications (2)

Publication Number Publication Date
JP2003519924A true JP2003519924A (ja) 2003-06-24
JP2003519924A5 JP2003519924A5 (https=) 2007-06-28

Family

ID=23888165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001550807A Pending JP2003519924A (ja) 2000-01-05 2000-07-31 信号処理時間が減じられた半導体装置およびその製造方法

Country Status (6)

Country Link
US (1) US6541863B1 (https=)
EP (1) EP1245045B1 (https=)
JP (1) JP2003519924A (https=)
KR (1) KR100698495B1 (https=)
DE (1) DE60037599T2 (https=)
WO (1) WO2001050527A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012516037A (ja) * 2009-01-20 2012-07-12 レイセオン カンパニー シリコン基板上に形成されるｃｍｏｓデバイスおよびｉｉｉ−ｖ族デバイスのための電気コンタクト

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100350111B1 (ko) * 2000-02-22 2002-08-23 삼성전자 주식회사 반도체 장치의 배선 및 이의 제조 방법
US6566242B1 (en) * 2001-03-23 2003-05-20 International Business Machines Corporation Dual damascene copper interconnect to a damascene tungsten wiring level
US6756620B2 (en) * 2001-06-29 2004-06-29 Intel Corporation Low-voltage and interface damage-free polymer memory device
US7294567B2 (en) * 2002-03-11 2007-11-13 Micron Technology, Inc. Semiconductor contact device and method
JP2004014815A (ja) * 2002-06-07 2004-01-15 Hitachi Ltd 半導体装置及びその製造方法
KR100416627B1 (ko) * 2002-06-18 2004-01-31 삼성전자주식회사 반도체 장치 및 그의 제조방법
US7382740B2 (en) * 2004-01-13 2008-06-03 Meshnetworks, Inc. System and method to perform smooth handoff of mobile terminals between fixed terminals in a network
US7709903B2 (en) * 2007-05-25 2010-05-04 Taiwan Semiconductor Manufacturing Company, Ltd. Contact barrier structure and manufacturing methods
US8633520B2 (en) 2010-10-21 2014-01-21 Samsung Electronics Co., Ltd. Semiconductor device
KR102733881B1 (ko) * 2016-09-12 2024-11-27 삼성전자주식회사 배선 구조체를 갖는 반도체 소자
KR102450580B1 (ko) * 2017-12-22 2022-10-07 삼성전자주식회사 금속 배선 하부의 절연층 구조를 갖는 반도체 장치
JP7531981B2 (ja) * 2019-07-18 2024-08-13 東京エレクトロン株式会社 領域選択的堆積における横方向のフィルム成長を緩和するための方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01235254A (ja) * 1988-03-15 1989-09-20 Nec Corp 半導体装置及びその製造方法
JPH0859362A (ja) * 1994-06-07 1996-03-05 Texas Instr Inc <Ti> 電子装置のための低誘電率材料である多孔質誘電体
JPH08125016A (ja) * 1994-10-24 1996-05-17 Sony Corp 半導体装置の製造方法
JPH10181032A (ja) * 1996-11-11 1998-07-07 Canon Inc スルーホールの作製方法、スルーホールを有するシリコン基板、該基板を用いたデバイス、インクジェットヘッドの製造方法およびインクジェットヘッド
JPH11312733A (ja) * 1998-04-28 1999-11-09 Nkk Corp 集積回路装置の製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4380865A (en) * 1981-11-13 1983-04-26 Bell Telephone Laboratories, Incorporated Method of forming dielectrically isolated silicon semiconductor materials utilizing porous silicon formation
US4628591A (en) * 1984-10-31 1986-12-16 Texas Instruments Incorporated Method for obtaining full oxide isolation of epitaxial islands in silicon utilizing selective oxidation of porous silicon
JPS63127551A (ja) * 1986-11-17 1988-05-31 Toshiba Corp 半導体装置の製造方法
US6017811A (en) * 1993-09-09 2000-01-25 The United States Of America As Represented By The Secretary Of The Navy Method of making improved electrical contact to porous silicon
EP0733269B1 (en) * 1993-12-06 2002-01-16 QinetiQ Limited Porous semiconductor material
US5504042A (en) 1994-06-23 1996-04-02 Texas Instruments Incorporated Porous dielectric material with improved pore surface properties for electronics applications
KR0147939B1 (ko) 1994-11-11 1998-09-15 배순훈 투사형 화상표시장치의 화소보정장치
US5691238A (en) 1995-06-07 1997-11-25 Advanced Micro Devices, Inc. Subtractive dual damascene
US5821621A (en) * 1995-10-12 1998-10-13 Texas Instruments Incorporated Low capacitance interconnect structure for integrated circuits
JP3378135B2 (ja) * 1996-02-02 2003-02-17 三菱電機株式会社 半導体装置とその製造方法
WO1998000862A1 (en) 1996-06-28 1998-01-08 Advanced Micro Devices, Inc. Solid porous insulated conductive lines
US5744865A (en) * 1996-10-22 1998-04-28 Texas Instruments Incorporated Highly thermally conductive interconnect structure for intergrated circuits
JP3123449B2 (ja) * 1996-11-01 2001-01-09 ヤマハ株式会社 多層配線形成法
US6008540A (en) * 1997-05-28 1999-12-28 Texas Instruments Incorporated Integrated circuit dielectric and method
US6407441B1 (en) * 1997-12-29 2002-06-18 Texas Instruments Incorporated Integrated circuit and method of using porous silicon to achieve component isolation in radio frequency applications
FR2779006B1 (fr) * 1998-05-19 2003-01-24 St Microelectronics Sa Procede de formation de silicium poreux dans un substrat de silicium, en particulier pour l'amelioration des performances d'un circuit inductif
US6376859B1 (en) * 1998-07-29 2002-04-23 Texas Instruments Incorporated Variable porosity porous silicon isolation
US6090724A (en) * 1998-12-15 2000-07-18 Lsi Logic Corporation Method for composing a thermally conductive thin film having a low dielectric property

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01235254A (ja) * 1988-03-15 1989-09-20 Nec Corp 半導体装置及びその製造方法
JPH0859362A (ja) * 1994-06-07 1996-03-05 Texas Instr Inc <Ti> 電子装置のための低誘電率材料である多孔質誘電体
JPH08125016A (ja) * 1994-10-24 1996-05-17 Sony Corp 半導体装置の製造方法
JPH10181032A (ja) * 1996-11-11 1998-07-07 Canon Inc スルーホールの作製方法、スルーホールを有するシリコン基板、該基板を用いたデバイス、インクジェットヘッドの製造方法およびインクジェットヘッド
JPH11312733A (ja) * 1998-04-28 1999-11-09 Nkk Corp 集積回路装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012516037A (ja) * 2009-01-20 2012-07-12 レイセオン カンパニー シリコン基板上に形成されるｃｍｏｓデバイスおよびｉｉｉ−ｖ族デバイスのための電気コンタクト

Also Published As

Publication number Publication date
DE60037599D1 (de) 2008-02-07
EP1245045A1 (en) 2002-10-02
EP1245045B1 (en) 2007-12-26
KR100698495B1 (ko) 2007-03-23
US6541863B1 (en) 2003-04-01
KR20020065641A (ko) 2002-08-13
DE60037599T2 (de) 2008-04-30
WO2001050527A1 (en) 2001-07-12

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