JP2003516473A5 - - Google Patents

Download PDF

Info

Publication number
JP2003516473A5
JP2003516473A5 JP2001544390A JP2001544390A JP2003516473A5 JP 2003516473 A5 JP2003516473 A5 JP 2003516473A5 JP 2001544390 A JP2001544390 A JP 2001544390A JP 2001544390 A JP2001544390 A JP 2001544390A JP 2003516473 A5 JP2003516473 A5 JP 2003516473A5
Authority
JP
Japan
Prior art keywords
metal
zinc
target
sputtered material
sputtered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001544390A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003516473A (ja
JP4851672B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2000/042533 external-priority patent/WO2001042522A2/en
Publication of JP2003516473A publication Critical patent/JP2003516473A/ja
Publication of JP2003516473A5 publication Critical patent/JP2003516473A5/ja
Application granted granted Critical
Publication of JP4851672B2 publication Critical patent/JP4851672B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2001544390A 1999-12-03 2000-12-01 改良されたスパッタリングターゲット及びその製法並びに使用 Expired - Fee Related JP4851672B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16896599P 1999-12-03 1999-12-03
US60/168,965 1999-12-03
PCT/US2000/042533 WO2001042522A2 (en) 1999-12-03 2000-12-01 Sputtering target and methods of making same

Publications (3)

Publication Number Publication Date
JP2003516473A JP2003516473A (ja) 2003-05-13
JP2003516473A5 true JP2003516473A5 (enExample) 2008-01-31
JP4851672B2 JP4851672B2 (ja) 2012-01-11

Family

ID=22613726

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001544390A Expired - Fee Related JP4851672B2 (ja) 1999-12-03 2000-12-01 改良されたスパッタリングターゲット及びその製法並びに使用

Country Status (8)

Country Link
US (1) US6787003B2 (enExample)
EP (1) EP1235948B1 (enExample)
JP (1) JP4851672B2 (enExample)
AT (1) ATE306571T1 (enExample)
AU (1) AU4515201A (enExample)
DE (1) DE60023176T2 (enExample)
ES (1) ES2250229T3 (enExample)
WO (1) WO2001042522A2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002027057A2 (en) * 2000-09-25 2002-04-04 Cardinal Cg Company Sputtering target and method of making same
JP3355373B1 (ja) * 2001-06-14 2002-12-09 鈴鹿工業高等専門学校長 すず−亜鉛合金膜の製造方法
JP4413008B2 (ja) * 2001-08-13 2010-02-10 ナムローゼ・フェンノートシャップ・ベーカート・ソシエテ・アノニム スパッタターゲットを製造する方法
WO2004013372A1 (ja) 2002-08-02 2004-02-12 Idemitsu Kosan Co.,Ltd. スパッタリングターゲット及び焼結体及びそれらを利用して製造した導電膜、並びに有機ｅｌ素子及びそれに用いる基板
WO2004016823A1 (ja) * 2002-08-12 2004-02-26 Nikko Materials Company, Limited シリコン基板又はシリコンスパッタリングターゲット及びこれらの製造方法
US7118726B2 (en) 2002-12-13 2006-10-10 Clark Manufacturing, Llc Method for making oxide compounds
US20050072668A1 (en) * 2003-10-06 2005-04-07 Heraeus, Inc. Sputter target having modified surface texture
EP1557863B1 (en) * 2004-01-22 2011-12-21 Canon Kabushiki Kaisha Antistatic film, spacer using it and picture display unit
US20050236270A1 (en) * 2004-04-23 2005-10-27 Heraeus, Inc. Controlled cooling of sputter targets
US20060144697A1 (en) * 2005-01-06 2006-07-06 Centre Luxembourgeois de Recherches pour le Verre et la Ceramique S.A. (C.R.V.C.) Dudelange Method of making coated article by sputtering cast target to form zinc oxide inclusive layer(s)
US20060289304A1 (en) * 2005-06-22 2006-12-28 Guardian Industries Corp. Sputtering target with slow-sputter layer under target material
US8123919B2 (en) * 2005-09-20 2012-02-28 Guardian Industries Corp. Sputtering target with bonding layer of varying thickness under target material
CA2626073A1 (en) * 2005-11-01 2007-05-10 Cardinal Cg Company Reactive sputter deposition processes and equipment
US20070134500A1 (en) * 2005-12-14 2007-06-14 Klaus Hartig Sputtering targets and methods for depositing film containing tin and niobium
US20070289869A1 (en) * 2006-06-15 2007-12-20 Zhifei Ye Large Area Sputtering Target
AT504220B1 (de) * 2006-12-13 2008-04-15 Miba Gleitlager Gmbh Gleitlager
JP5798482B2 (ja) * 2008-07-08 2015-10-21 ソレラス・アドヴァンスト・コーティングス・ビーヴイビーエー 第１の相および第２の相を含む酸化物スパッタターゲットの製造方法
KR20150003713U (ko) * 2013-02-01 2015-10-12 어플라이드 머티어리얼스, 인코포레이티드 도핑된 아연 타겟
CN103320760B (zh) * 2013-07-12 2015-04-15 长春理工大学 MgZnO薄膜叠靶射频磁控溅射制备方法
EP2947175A1 (en) * 2014-05-21 2015-11-25 Heraeus Deutschland GmbH & Co. KG CuSn, CuZn and Cu2ZnSn sputter targets
US20160133826A1 (en) * 2014-11-06 2016-05-12 Agency For Science, Technology & Research Method of making lead-free ceramic coating

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3318828C2 (de) * 1983-05-24 1986-01-02 Interpane Entwicklungs- und Beratungsgesellschaft mbH & Co. KG, 3471 Lauenförde Verfahren zum Aufbonden von Targetmaterial
US4610771A (en) 1984-10-29 1986-09-09 Ppg Industries, Inc. Sputtered films of metal alloy oxides and method of preparation thereof
JPS61158622A (ja) * 1984-12-29 1986-07-18 大阪特殊合金株式会社 透明導電膜の製造方法及びその装置
JPS63190156A (ja) * 1987-01-31 1988-08-05 Toyoda Gosei Co Ltd 金属溶射法
JPH0539566A (ja) * 1991-02-19 1993-02-19 Mitsubishi Materials Corp スパツタリング用ターゲツト及びその製造方法
US5171411A (en) * 1991-05-21 1992-12-15 The Boc Group, Inc. Rotating cylindrical magnetron structure with self supporting zinc alloy target
US5922176A (en) * 1992-06-12 1999-07-13 Donnelly Corporation Spark eliminating sputtering target and method for using and making same
US5693203A (en) * 1992-09-29 1997-12-02 Japan Energy Corporation Sputtering target assembly having solid-phase bonded interface
JPH06346232A (ja) * 1993-06-11 1994-12-20 Asahi Glass Co Ltd スパッタリング用ターゲットおよびその製造方法
JPH08109472A (ja) * 1994-10-14 1996-04-30 Asahi Glass Co Ltd スパッタリング用ターゲットおよびその製造方法
DE19626732B4 (de) * 1996-07-03 2009-01-29 W.C. Heraeus Gmbh Vorrichtung und Verfahren zum Herstellen und Recyclen von Sputtertargets
JPH11181563A (ja) * 1997-12-17 1999-07-06 Daido Steel Co Ltd 表面硬化アルミニウム部材およびその製造方法
US6899953B1 (en) * 1998-05-08 2005-05-31 Ppg Industries Ohio, Inc. Shippable heat-treatable sputter coated article and zinc cathode sputtering target containing low amounts of tin

Similar Documents

Publication Publication Date Title
JP2003516473A5 (enExample)
KR880001840A (ko) 양극 분산법(가루화 법)에 의해서 생성된 적어도 하나의 마찰면을 함유하는 결합합성물질, 이의 제조방법 및 이의 용도
WO2001042522A3 (en) Sputtering target and methods of making same
CA2281804A1 (en) Ceramic/metal and a15/metal superconducting composite materials exploiting superconducting proximity effect
TWI254748B (en) Sputtering target and process for producing the same
AU2001286564A1 (en) Article including a composite of unstabilized zirconium oxide particles in a metallic matrix, and its preparation
EP1013379A4 (en) DIAMAND CONTAINING SHEET COMPOSITE MATERIAL AND METHOD FOR THE PRODUCTION THEREOF
EP1180506A3 (de) Verfahren zur Herstellung einer Beschichtung auf einem feuerfesten Bauteil
WO2002016666A3 (en) Sputtering targets
JPS5843460B2 (ja) 溶射用Ａｌ合金
WO2002027057A3 (en) Sputtering target and method of making same
JPH029112B2 (enExample)
DK0871793T3 (da) Fremgangsmåde til fremstilling af genstande af indium-tin-oxid-(ITO)-legeringer
CN109112460B (zh) 一种热喷涂耐高温陶瓷涂层的制备方法
JPH06158303A (ja) スパッタリング用ターゲット及びその製造方法
JP2014056770A (ja) 有機ＥＬ素子のアノード電極用Ａｌ合金膜、有機ＥＬ素子およびＡｌ合金スパッタリングターゲット
US4107348A (en) Method of constructing porcelain-metal dental restorations
Choi et al. Effect of surface modification of TiV2. 1Ni0. 3 by ball-milling with MgNi on charge–discharge cycle performance
JPS5641636A (en) Directly heated type oxide cathode
JPH0756070B2 (ja) スパッタ成膜方法
JP2005139539A (ja) マグネシウム化合物被膜を有する金属材料、スパッタリング用ターゲット部材、スパッタリング用ターゲット部材の製造方法およびマグネシウム化合物被膜の形成方法
JP3040432B2 (ja) スパッタリング用ターゲット
JP2003073815A5 (ja) スパッタリングターゲットとその製造方法、およびそれを用いたＴｉ−Ａｌ−Ｎ膜と電子部品
JPS6240426B2 (enExample)
JPS61127863A (ja) 外装部品