ATE306571T1 - Sputtertarget und verfahren zur herstellung eines solchen targets - Google Patents

Sputtertarget und verfahren zur herstellung eines solchen targets

Info

Publication number
ATE306571T1
ATE306571T1 AT00992611T AT00992611T ATE306571T1 AT E306571 T1 ATE306571 T1 AT E306571T1 AT 00992611 T AT00992611 T AT 00992611T AT 00992611 T AT00992611 T AT 00992611T AT E306571 T1 ATE306571 T1 AT E306571T1
Authority
AT
Austria
Prior art keywords
zinc
target
metal
sputterable material
producing
Prior art date
Application number
AT00992611T
Other languages
English (en)
Inventor
Klaus Hartig
Johan Vanderstraeten
Original Assignee
Bekaert Sa Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bekaert Sa Nv filed Critical Bekaert Sa Nv
Application granted granted Critical
Publication of ATE306571T1 publication Critical patent/ATE306571T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C18/00—Alloys based on zinc
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/06—Metallic material
    • C23C4/08—Metallic material containing only metal elements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
AT00992611T 1999-12-03 2000-12-01 Sputtertarget und verfahren zur herstellung eines solchen targets ATE306571T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16896599P 1999-12-03 1999-12-03
PCT/US2000/042533 WO2001042522A2 (en) 1999-12-03 2000-12-01 Sputtering target and methods of making same

Publications (1)

Publication Number Publication Date
ATE306571T1 true ATE306571T1 (de) 2005-10-15

Family

ID=22613726

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00992611T ATE306571T1 (de) 1999-12-03 2000-12-01 Sputtertarget und verfahren zur herstellung eines solchen targets

Country Status (8)

Country Link
US (1) US6787003B2 (de)
EP (1) EP1235948B1 (de)
JP (1) JP4851672B2 (de)
AT (1) ATE306571T1 (de)
AU (1) AU4515201A (de)
DE (1) DE60023176T2 (de)
ES (1) ES2250229T3 (de)
WO (1) WO2001042522A2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU9304201A (en) * 2000-09-25 2002-04-08 Cardinal Cg Co Improved sputtering target and methods of making and using same
JP3355373B1 (ja) * 2001-06-14 2002-12-09 鈴鹿工業高等専門学校長 すず−亜鉛合金膜の製造方法
KR20040030960A (ko) * 2001-08-13 2004-04-09 엔.브이. 베카에르트 에스.에이. 스퍼터 타겟
KR101002492B1 (ko) 2002-08-02 2010-12-17 이데미쓰 고산 가부시키가이샤 스퍼터링 타겟, 소결체, 이들을 사용하여 제조한 도전막,유기 ｅｌ 소자, 및 이것에 사용하는 기판
WO2004016823A1 (ja) * 2002-08-12 2004-02-26 Nikko Materials Company, Limited シリコン基板又はシリコンスパッタリングターゲット及びこれらの製造方法
US7118726B2 (en) 2002-12-13 2006-10-10 Clark Manufacturing, Llc Method for making oxide compounds
US20050072668A1 (en) * 2003-10-06 2005-04-07 Heraeus, Inc. Sputter target having modified surface texture
EP1998355A3 (de) * 2004-01-22 2009-02-25 Canon Kabushiki Kaisha Antistatische Folie, Distanzstück damit und Bildanzeigeeinheit
US20050236270A1 (en) * 2004-04-23 2005-10-27 Heraeus, Inc. Controlled cooling of sputter targets
US20060144697A1 (en) * 2005-01-06 2006-07-06 Centre Luxembourgeois de Recherches pour le Verre et la Ceramique S.A. (C.R.V.C.) Dudelange Method of making coated article by sputtering cast target to form zinc oxide inclusive layer(s)
US20060289304A1 (en) * 2005-06-22 2006-12-28 Guardian Industries Corp. Sputtering target with slow-sputter layer under target material
US8123919B2 (en) * 2005-09-20 2012-02-28 Guardian Industries Corp. Sputtering target with bonding layer of varying thickness under target material
WO2007053586A2 (en) * 2005-11-01 2007-05-10 Cardinal Cg Company Reactive sputter deposition processes and equipment
US20070134500A1 (en) * 2005-12-14 2007-06-14 Klaus Hartig Sputtering targets and methods for depositing film containing tin and niobium
US20070289869A1 (en) * 2006-06-15 2007-12-20 Zhifei Ye Large Area Sputtering Target
AT504220B1 (de) * 2006-12-13 2008-04-15 Miba Gleitlager Gmbh Gleitlager
CN102089455A (zh) * 2008-07-08 2011-06-08 贝卡尔特先进涂层公司 一种制备包含第一相和第二相的氧化物溅射靶的方法
KR20150003713U (ko) * 2013-02-01 2015-10-12 어플라이드 머티어리얼스, 인코포레이티드 도핑된 아연 타겟
CN103320760B (zh) * 2013-07-12 2015-04-15 长春理工大学 MgZnO薄膜叠靶射频磁控溅射制备方法
EP2947175A1 (de) * 2014-05-21 2015-11-25 Heraeus Deutschland GmbH & Co. KG CuSn, CuZn und Cu2ZnSn Sputtertargets
US20160133826A1 (en) * 2014-11-06 2016-05-12 Agency For Science, Technology & Research Method of making lead-free ceramic coating

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3318828C2 (de) * 1983-05-24 1986-01-02 Interpane Entwicklungs- und Beratungsgesellschaft mbH & Co. KG, 3471 Lauenförde Verfahren zum Aufbonden von Targetmaterial
US4610771A (en) 1984-10-29 1986-09-09 Ppg Industries, Inc. Sputtered films of metal alloy oxides and method of preparation thereof
JPS61158622A (ja) * 1984-12-29 1986-07-18 大阪特殊合金株式会社 透明導電膜の製造方法及びその装置
JPS63190156A (ja) * 1987-01-31 1988-08-05 Toyoda Gosei Co Ltd 金属溶射法
JPH0539566A (ja) * 1991-02-19 1993-02-19 Mitsubishi Materials Corp スパツタリング用ターゲツト及びその製造方法
US5171411A (en) * 1991-05-21 1992-12-15 The Boc Group, Inc. Rotating cylindrical magnetron structure with self supporting zinc alloy target
US5922176A (en) * 1992-06-12 1999-07-13 Donnelly Corporation Spark eliminating sputtering target and method for using and making same
US5693203A (en) * 1992-09-29 1997-12-02 Japan Energy Corporation Sputtering target assembly having solid-phase bonded interface
JPH06346232A (ja) * 1993-06-11 1994-12-20 Asahi Glass Co Ltd スパッタリング用ターゲットおよびその製造方法
JPH08109472A (ja) * 1994-10-14 1996-04-30 Asahi Glass Co Ltd スパッタリング用ターゲットおよびその製造方法
DE19626732B4 (de) * 1996-07-03 2009-01-29 W.C. Heraeus Gmbh Vorrichtung und Verfahren zum Herstellen und Recyclen von Sputtertargets
JPH11181563A (ja) * 1997-12-17 1999-07-06 Daido Steel Co Ltd 表面硬化アルミニウム部材およびその製造方法
US6899953B1 (en) 1998-05-08 2005-05-31 Ppg Industries Ohio, Inc. Shippable heat-treatable sputter coated article and zinc cathode sputtering target containing low amounts of tin

Also Published As

Publication number Publication date
JP2003516473A (ja) 2003-05-13
US20020192390A1 (en) 2002-12-19
AU4515201A (en) 2001-06-18
WO2001042522A2 (en) 2001-06-14
US6787003B2 (en) 2004-09-07
EP1235948B1 (de) 2005-10-12
WO2001042522A3 (en) 2002-05-02
DE60023176D1 (de) 2006-02-23
EP1235948A2 (de) 2002-09-04
DE60023176T2 (de) 2006-06-14
JP4851672B2 (ja) 2012-01-11
ES2250229T3 (es) 2006-04-16

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