ES2250229T3 - Blanco de bombardeo atomico y metodos de obtencion del mismo. - Google Patents
Blanco de bombardeo atomico y metodos de obtencion del mismo.Info
- Publication number
- ES2250229T3 ES2250229T3 ES00992611T ES00992611T ES2250229T3 ES 2250229 T3 ES2250229 T3 ES 2250229T3 ES 00992611 T ES00992611 T ES 00992611T ES 00992611 T ES00992611 T ES 00992611T ES 2250229 T3 ES2250229 T3 ES 2250229T3
- Authority
- ES
- Spain
- Prior art keywords
- metal
- zinc
- atomic
- bombardment
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 30
- 229910052751 metal Inorganic materials 0.000 claims abstract description 124
- 239000002184 metal Substances 0.000 claims abstract description 124
- 239000011701 zinc Substances 0.000 claims abstract description 107
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 102
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 102
- 239000000463 material Substances 0.000 claims abstract description 64
- 239000000203 mixture Substances 0.000 claims abstract description 26
- 238000002844 melting Methods 0.000 claims abstract description 18
- 230000008018 melting Effects 0.000 claims abstract description 18
- 239000011159 matrix material Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 22
- 239000000956 alloy Substances 0.000 claims description 19
- 229910045601 alloy Inorganic materials 0.000 claims description 19
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 19
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 18
- 229910052797 bismuth Inorganic materials 0.000 claims description 18
- 229910052718 tin Inorganic materials 0.000 claims description 18
- 239000007921 spray Substances 0.000 claims description 11
- 235000014692 zinc oxide Nutrition 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 7
- 239000000843 powder Substances 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 5
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical class [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 238000010298 pulverizing process Methods 0.000 claims 1
- 238000005507 spraying Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 52
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 239000010408 film Substances 0.000 description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 238000000576 coating method Methods 0.000 description 11
- 150000002739 metals Chemical class 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 241000254158 Lampyridae Species 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000007750 plasma spraying Methods 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 229910001297 Zn alloy Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000012788 optical film Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910001152 Bi alloy Inorganic materials 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000001706 oxygenating effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- AKJVMGQSGCSQBU-UHFFFAOYSA-N zinc azanidylidenezinc Chemical compound [Zn++].[N-]=[Zn].[N-]=[Zn] AKJVMGQSGCSQBU-UHFFFAOYSA-N 0.000 description 1
- -1 zinc nitrides Chemical class 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C18/00—Alloys based on zinc
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/06—Metallic material
- C23C4/08—Metallic material containing only metal elements
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16896599P | 1999-12-03 | 1999-12-03 | |
| US168965P | 1999-12-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES2250229T3 true ES2250229T3 (es) | 2006-04-16 |
Family
ID=22613726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES00992611T Expired - Lifetime ES2250229T3 (es) | 1999-12-03 | 2000-12-01 | Blanco de bombardeo atomico y metodos de obtencion del mismo. |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6787003B2 (enExample) |
| EP (1) | EP1235948B1 (enExample) |
| JP (1) | JP4851672B2 (enExample) |
| AT (1) | ATE306571T1 (enExample) |
| AU (1) | AU4515201A (enExample) |
| DE (1) | DE60023176T2 (enExample) |
| ES (1) | ES2250229T3 (enExample) |
| WO (1) | WO2001042522A2 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002027057A2 (en) * | 2000-09-25 | 2002-04-04 | Cardinal Cg Company | Sputtering target and method of making same |
| JP3355373B1 (ja) * | 2001-06-14 | 2002-12-09 | 鈴鹿工業高等専門学校長 | すず−亜鉛合金膜の製造方法 |
| JP4413008B2 (ja) * | 2001-08-13 | 2010-02-10 | ナムローゼ・フェンノートシャップ・ベーカート・ソシエテ・アノニム | スパッタターゲットを製造する方法 |
| WO2004013372A1 (ja) | 2002-08-02 | 2004-02-12 | Idemitsu Kosan Co.,Ltd. | スパッタリングターゲット及び焼結体及びそれらを利用して製造した導電膜、並びに有機ｅｌ素子及びそれに用いる基板 |
| WO2004016823A1 (ja) * | 2002-08-12 | 2004-02-26 | Nikko Materials Company, Limited | シリコン基板又はシリコンスパッタリングターゲット及びこれらの製造方法 |
| US7118726B2 (en) | 2002-12-13 | 2006-10-10 | Clark Manufacturing, Llc | Method for making oxide compounds |
| US20050072668A1 (en) * | 2003-10-06 | 2005-04-07 | Heraeus, Inc. | Sputter target having modified surface texture |
| EP1557863B1 (en) * | 2004-01-22 | 2011-12-21 | Canon Kabushiki Kaisha | Antistatic film, spacer using it and picture display unit |
| US20050236270A1 (en) * | 2004-04-23 | 2005-10-27 | Heraeus, Inc. | Controlled cooling of sputter targets |
| US20060144697A1 (en) * | 2005-01-06 | 2006-07-06 | Centre Luxembourgeois de Recherches pour le Verre et la Ceramique S.A. (C.R.V.C.) Dudelange | Method of making coated article by sputtering cast target to form zinc oxide inclusive layer(s) |
| US20060289304A1 (en) * | 2005-06-22 | 2006-12-28 | Guardian Industries Corp. | Sputtering target with slow-sputter layer under target material |
| US8123919B2 (en) * | 2005-09-20 | 2012-02-28 | Guardian Industries Corp. | Sputtering target with bonding layer of varying thickness under target material |
| CA2626073A1 (en) * | 2005-11-01 | 2007-05-10 | Cardinal Cg Company | Reactive sputter deposition processes and equipment |
| US20070134500A1 (en) * | 2005-12-14 | 2007-06-14 | Klaus Hartig | Sputtering targets and methods for depositing film containing tin and niobium |
| US20070289869A1 (en) * | 2006-06-15 | 2007-12-20 | Zhifei Ye | Large Area Sputtering Target |
| AT504220B1 (de) * | 2006-12-13 | 2008-04-15 | Miba Gleitlager Gmbh | Gleitlager |
| JP5798482B2 (ja) * | 2008-07-08 | 2015-10-21 | ソレラス・アドヴァンスト・コーティングス・ビーヴイビーエー | 第１の相および第２の相を含む酸化物スパッタターゲットの製造方法 |
| KR20150003713U (ko) * | 2013-02-01 | 2015-10-12 | 어플라이드 머티어리얼스, 인코포레이티드 | 도핑된 아연 타겟 |
| CN103320760B (zh) * | 2013-07-12 | 2015-04-15 | 长春理工大学 | MgZnO薄膜叠靶射频磁控溅射制备方法 |
| EP2947175A1 (en) * | 2014-05-21 | 2015-11-25 | Heraeus Deutschland GmbH & Co. KG | CuSn, CuZn and Cu2ZnSn sputter targets |
| US20160133826A1 (en) * | 2014-11-06 | 2016-05-12 | Agency For Science, Technology & Research | Method of making lead-free ceramic coating |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3318828C2 (de) * | 1983-05-24 | 1986-01-02 | Interpane Entwicklungs- und Beratungsgesellschaft mbH & Co. KG, 3471 Lauenförde | Verfahren zum Aufbonden von Targetmaterial |
| US4610771A (en) | 1984-10-29 | 1986-09-09 | Ppg Industries, Inc. | Sputtered films of metal alloy oxides and method of preparation thereof |
| JPS61158622A (ja) * | 1984-12-29 | 1986-07-18 | 大阪特殊合金株式会社 | 透明導電膜の製造方法及びその装置 |
| JPS63190156A (ja) * | 1987-01-31 | 1988-08-05 | Toyoda Gosei Co Ltd | 金属溶射法 |
| JPH0539566A (ja) * | 1991-02-19 | 1993-02-19 | Mitsubishi Materials Corp | スパツタリング用ターゲツト及びその製造方法 |
| US5171411A (en) * | 1991-05-21 | 1992-12-15 | The Boc Group, Inc. | Rotating cylindrical magnetron structure with self supporting zinc alloy target |
| US5922176A (en) * | 1992-06-12 | 1999-07-13 | Donnelly Corporation | Spark eliminating sputtering target and method for using and making same |
| US5693203A (en) * | 1992-09-29 | 1997-12-02 | Japan Energy Corporation | Sputtering target assembly having solid-phase bonded interface |
| JPH06346232A (ja) * | 1993-06-11 | 1994-12-20 | Asahi Glass Co Ltd | スパッタリング用ターゲットおよびその製造方法 |
| JPH08109472A (ja) * | 1994-10-14 | 1996-04-30 | Asahi Glass Co Ltd | スパッタリング用ターゲットおよびその製造方法 |
| DE19626732B4 (de) * | 1996-07-03 | 2009-01-29 | W.C. Heraeus Gmbh | Vorrichtung und Verfahren zum Herstellen und Recyclen von Sputtertargets |
| JPH11181563A (ja) * | 1997-12-17 | 1999-07-06 | Daido Steel Co Ltd | 表面硬化アルミニウム部材およびその製造方法 |
| US6899953B1 (en) * | 1998-05-08 | 2005-05-31 | Ppg Industries Ohio, Inc. | Shippable heat-treatable sputter coated article and zinc cathode sputtering target containing low amounts of tin |
-
2000
- 2000-12-01 JP JP2001544390A patent/JP4851672B2/ja not_active Expired - Fee Related
- 2000-12-01 EP EP00992611A patent/EP1235948B1/en not_active Expired - Lifetime
- 2000-12-01 DE DE60023176T patent/DE60023176T2/de not_active Expired - Lifetime
- 2000-12-01 AU AU45152/01A patent/AU4515201A/en not_active Abandoned
- 2000-12-01 WO PCT/US2000/042533 patent/WO2001042522A2/en not_active Ceased
- 2000-12-01 ES ES00992611T patent/ES2250229T3/es not_active Expired - Lifetime
- 2000-12-01 US US10/148,464 patent/US6787003B2/en not_active Expired - Fee Related
- 2000-12-01 AT AT00992611T patent/ATE306571T1/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP1235948B1 (en) | 2005-10-12 |
| EP1235948A2 (en) | 2002-09-04 |
| DE60023176D1 (de) | 2006-02-23 |
| JP2003516473A (ja) | 2003-05-13 |
| US6787003B2 (en) | 2004-09-07 |
| JP4851672B2 (ja) | 2012-01-11 |
| AU4515201A (en) | 2001-06-18 |
| ATE306571T1 (de) | 2005-10-15 |
| DE60023176T2 (de) | 2006-06-14 |
| US20020192390A1 (en) | 2002-12-19 |
| WO2001042522A3 (en) | 2002-05-02 |
| WO2001042522A2 (en) | 2001-06-14 |
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