JP2003515794A5 - - Google Patents

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Publication number
JP2003515794A5
JP2003515794A5 JP2001542276A JP2001542276A JP2003515794A5 JP 2003515794 A5 JP2003515794 A5 JP 2003515794A5 JP 2001542276 A JP2001542276 A JP 2001542276A JP 2001542276 A JP2001542276 A JP 2001542276A JP 2003515794 A5 JP2003515794 A5 JP 2003515794A5
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JP
Japan
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JP2001542276A
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Japanese (ja)
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JP4629943B2 (ja
JP2003515794A (ja
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Priority claimed from US09/454,715 external-priority patent/US6319635B1/en
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Publication of JP2003515794A5 publication Critical patent/JP2003515794A5/ja
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Publication of JP4629943B2 publication Critical patent/JP4629943B2/ja
Anticipated expiration legal-status Critical
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JP2001542276A 1999-12-06 2000-11-16 多層緩衝層使用のレチクルにおける基板欠陥の軽減 Expired - Lifetime JP4629943B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/454,715 1999-12-06
US09/454,715 US6319635B1 (en) 1999-12-06 1999-12-06 Mitigation of substrate defects in reticles using multilayer buffer layers
PCT/US2000/031584 WO2001040871A1 (en) 1999-12-06 2000-11-16 Mitigation of substrate defects in reticles using multilayer buffer layers

Publications (3)

Publication Number Publication Date
JP2003515794A JP2003515794A (ja) 2003-05-07
JP2003515794A5 true JP2003515794A5 (enExample) 2007-12-27
JP4629943B2 JP4629943B2 (ja) 2011-02-09

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ID=23805774

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001542276A Expired - Lifetime JP4629943B2 (ja) 1999-12-06 2000-11-16 多層緩衝層使用のレチクルにおける基板欠陥の軽減

Country Status (8)

Country Link
US (2) US6319635B1 (enExample)
EP (1) EP1248963B1 (enExample)
JP (1) JP4629943B2 (enExample)
KR (1) KR100704429B1 (enExample)
AT (1) ATE321294T1 (enExample)
AU (1) AU1772001A (enExample)
DE (1) DE60026876T2 (enExample)
WO (1) WO2001040871A1 (enExample)

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JP5133967B2 (ja) * 2009-11-16 2013-01-30 ルネサスエレクトロニクス株式会社 Ｅｕｖ露光方法
JP5716038B2 (ja) * 2009-12-15 2015-05-13 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖリソグラフィ用反射光学素子
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US10460932B2 (en) 2017-03-31 2019-10-29 Asm Ip Holding B.V. Semiconductor device with amorphous silicon filled gaps and methods for forming
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JP2020056104A (ja) 2018-10-02 2020-04-09 エーエスエム アイピー ホールディング ビー．ブイ． 選択的パッシベーションおよび選択的堆積
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TWI862807B (zh) 2020-03-30 2024-11-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 相對於金屬表面在介電表面上之氧化矽的選擇性沉積
TWI865747B (zh) 2020-03-30 2024-12-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 在兩不同表面上同時選擇性沉積兩不同材料
TW202140832A (zh) 2020-03-30 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氧化矽在金屬表面上之選擇性沉積
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