JP2003503840A - 高位置固定均一化リング - Google Patents

高位置固定均一化リング

Info

Publication number
JP2003503840A
JP2003503840A JP2001506575A JP2001506575A JP2003503840A JP 2003503840 A JP2003503840 A JP 2003503840A JP 2001506575 A JP2001506575 A JP 2001506575A JP 2001506575 A JP2001506575 A JP 2001506575A JP 2003503840 A JP2003503840 A JP 2003503840A
Authority
JP
Japan
Prior art keywords
ring
plasma processing
substrate
processing reactor
homogenization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001506575A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003503840A5 (https=
Inventor
ニ・トゥキアン
コリソン・ウェンリ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2003503840A publication Critical patent/JP2003503840A/ja
Publication of JP2003503840A5 publication Critical patent/JP2003503840A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2001506575A 1999-06-30 2000-06-29 高位置固定均一化リング Pending JP2003503840A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/346,564 US6257168B1 (en) 1999-06-30 1999-06-30 Elevated stationary uniformity ring design
US09/346,564 1999-06-30
PCT/US2000/018233 WO2001001444A1 (en) 1999-06-30 2000-06-29 Elevated stationary uniformity ring

Publications (2)

Publication Number Publication Date
JP2003503840A true JP2003503840A (ja) 2003-01-28
JP2003503840A5 JP2003503840A5 (https=) 2007-11-15

Family

ID=23360003

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001506575A Pending JP2003503840A (ja) 1999-06-30 2000-06-29 高位置固定均一化リング

Country Status (8)

Country Link
US (1) US6257168B1 (https=)
EP (1) EP1108263B1 (https=)
JP (1) JP2003503840A (https=)
KR (1) KR100743874B1 (https=)
CN (1) CN1150593C (https=)
AU (1) AU5908500A (https=)
TW (1) TW464924B (https=)
WO (1) WO2001001444A1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008515193A (ja) * 2004-09-27 2008-05-08 ラム リサーチ コーポレーション プラズマ加工ステップセットの調整方法及び装置
KR20160144329A (ko) * 2015-06-08 2016-12-16 어플라이드 머티어리얼스, 인코포레이티드 액침 필드 가이드 노광 및 노광-후 베이크 프로세스
JP2017063212A (ja) * 2011-05-31 2017-03-30 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 誘導結合プラズマ（ｉｃｐ）リアクタ用動的イオンラジカルシーブ及びイオンラジカルアパーチャ
JP2017085111A (ja) * 2007-04-27 2017-05-18 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 環状のバッフル
JP2021150319A (ja) * 2020-03-16 2021-09-27 東京エレクトロン株式会社 基板処理装置および基板処理方法

Families Citing this family (30)

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US6230651B1 (en) * 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing
US20050059250A1 (en) * 2001-06-21 2005-03-17 Savas Stephen Edward Fast etching system and process for organic materials
US20060191637A1 (en) * 2001-06-21 2006-08-31 John Zajac Etching Apparatus and Process with Thickness and Uniformity Control
US6838387B1 (en) 2001-06-21 2005-01-04 John Zajac Fast etching system and process
US20030070620A1 (en) 2001-10-15 2003-04-17 Cooperberg David J. Tunable multi-zone gas injection system
US6884717B1 (en) 2002-01-03 2005-04-26 The United States Of America As Represented By The Secretary Of The Air Force Stiffened backside fabrication for microwave radio frequency wafers
US7075771B2 (en) * 2003-05-21 2006-07-11 Tokyo Electron Limited Apparatus and methods for compensating plasma sheath non-uniformities at the substrate in a plasma processing system
EP1480250A1 (en) * 2003-05-22 2004-11-24 HELYSSEN S.à.r.l. A high density plasma reactor and RF-antenna therefor
JP4418193B2 (ja) * 2003-08-22 2010-02-17 東京エレクトロン株式会社 パーティクル除去装置及びパーティクル除去方法及びプラズマ処理装置
GB0323001D0 (en) 2003-10-01 2003-11-05 Oxford Instr Plasma Technology Apparatus and method for plasma treating a substrate
US7578945B2 (en) * 2004-09-27 2009-08-25 Lam Research Corporation Method and apparatus for tuning a set of plasma processing steps
US20060172542A1 (en) * 2005-01-28 2006-08-03 Applied Materials, Inc. Method and apparatus to confine plasma and to enhance flow conductance
KR100672828B1 (ko) * 2005-06-29 2007-01-22 삼성전자주식회사 챔버 인서트 및 이를 포함하는 기판 가공 장치
US7879184B2 (en) * 2006-06-20 2011-02-01 Lam Research Corporation Apparatuses, systems and methods for rapid cleaning of plasma confinement rings with minimal erosion of other chamber parts
GB0616131D0 (en) * 2006-08-14 2006-09-20 Oxford Instr Plasma Technology Surface processing apparatus
US20120083129A1 (en) 2010-10-05 2012-04-05 Skyworks Solutions, Inc. Apparatus and methods for focusing plasma
US9478428B2 (en) * 2010-10-05 2016-10-25 Skyworks Solutions, Inc. Apparatus and methods for shielding a plasma etcher electrode
KR101895307B1 (ko) 2011-03-01 2018-10-04 어플라이드 머티어리얼스, 인코포레이티드 듀얼 로드락 구성의 저감 및 스트립 프로세스 챔버
WO2012148568A1 (en) 2011-03-01 2012-11-01 Applied Materials, Inc. Method and apparatus for substrate transfer and radical confinement
US11171008B2 (en) 2011-03-01 2021-11-09 Applied Materials, Inc. Abatement and strip process chamber in a dual load lock configuration
JP6545460B2 (ja) 2012-02-29 2019-07-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ロードロック構成内の除害・剥離処理チャンバ
JP5917477B2 (ja) * 2013-11-29 2016-05-18 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
KR102553629B1 (ko) * 2016-06-17 2023-07-11 삼성전자주식회사 플라즈마 처리 장치
US11538713B2 (en) * 2017-12-05 2022-12-27 Lam Research Corporation System and method for edge ring wear compensation
KR20190092154A (ko) 2018-01-30 2019-08-07 삼성전자주식회사 반도체 설비의 실링 장치 및 기류 산포 제어 장치
CN110911303B (zh) * 2018-09-14 2022-05-27 北京北方华创微电子装备有限公司 易碎管件的固定组件及半导体加工设备
JP7612618B2 (ja) * 2019-06-18 2025-01-14 ラム リサーチ コーポレーション 基板処理システム用の縮径キャリアリングハードウェア
FI129610B (en) * 2020-01-10 2022-05-31 Picosun Oy SUBSTRATE PROCESSING EQUIPMENT AND METHOD
US20230066418A1 (en) * 2021-08-30 2023-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Focus ring for a plasma-based semiconductor processing tool
JP7650254B2 (ja) * 2022-09-14 2025-03-24 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法、及びプログラム

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JPH0415918A (ja) * 1990-05-09 1992-01-21 Fujitsu Ltd ドライエッチング装置
JPH0786252A (ja) * 1993-09-20 1995-03-31 Fujitsu Ltd ドライエッチング装置とドライエッチング方法
JPH08102461A (ja) * 1994-06-22 1996-04-16 Applied Materials Inc プラズマリアクター用の改良型固定フォーカスリング
JPH08102460A (ja) * 1994-04-05 1996-04-16 Applied Materials Inc プラズマリアクタ内の半導体ウエハ処理用改善フォーカスリング
JPH08227800A (ja) * 1994-12-05 1996-09-03 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JPH08264515A (ja) * 1994-04-20 1996-10-11 Tokyo Electron Ltd プラズマ処理装置、処理装置及びエッチング処理装置
JPH10125497A (ja) * 1996-06-10 1998-05-15 Lam Res Corp ほぼ均一なプラズマ束を誘導するための誘導結合源

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JPS61131453A (ja) * 1984-11-30 1986-06-19 Fujitsu Ltd ヱツチング方法
US5662770A (en) * 1993-04-16 1997-09-02 Micron Technology, Inc. Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks
JP2638443B2 (ja) * 1993-08-31 1997-08-06 日本電気株式会社 ドライエッチング方法およびドライエッチング装置
US5463525A (en) * 1993-12-20 1995-10-31 International Business Machines Corporation Guard ring electrostatic chuck
TW323387B (https=) * 1995-06-07 1997-12-21 Tokyo Electron Co Ltd
JP3192370B2 (ja) * 1995-06-08 2001-07-23 東京エレクトロン株式会社 プラズマ処理装置
US5891348A (en) * 1996-01-26 1999-04-06 Applied Materials, Inc. Process gas focusing apparatus and method
US5900064A (en) * 1997-05-01 1999-05-04 Applied Materials, Inc. Plasma process chamber
US6074488A (en) * 1997-09-16 2000-06-13 Applied Materials, Inc Plasma chamber support having an electrically coupled collar ring
JP4602545B2 (ja) * 1997-09-16 2010-12-22 アプライド マテリアルズ インコーポレイテッド プラズマチャンバの半導体ワークピース用シュラウド

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0415918A (ja) * 1990-05-09 1992-01-21 Fujitsu Ltd ドライエッチング装置
JPH0786252A (ja) * 1993-09-20 1995-03-31 Fujitsu Ltd ドライエッチング装置とドライエッチング方法
JPH08102460A (ja) * 1994-04-05 1996-04-16 Applied Materials Inc プラズマリアクタ内の半導体ウエハ処理用改善フォーカスリング
JPH08264515A (ja) * 1994-04-20 1996-10-11 Tokyo Electron Ltd プラズマ処理装置、処理装置及びエッチング処理装置
JPH08102461A (ja) * 1994-06-22 1996-04-16 Applied Materials Inc プラズマリアクター用の改良型固定フォーカスリング
JPH08227800A (ja) * 1994-12-05 1996-09-03 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JPH10125497A (ja) * 1996-06-10 1998-05-15 Lam Res Corp ほぼ均一なプラズマ束を誘導するための誘導結合源

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008515193A (ja) * 2004-09-27 2008-05-08 ラム リサーチ コーポレーション プラズマ加工ステップセットの調整方法及び装置
JP2017085111A (ja) * 2007-04-27 2017-05-18 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 環状のバッフル
JP2017063212A (ja) * 2011-05-31 2017-03-30 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 誘導結合プラズマ（ｉｃｐ）リアクタ用動的イオンラジカルシーブ及びイオンラジカルアパーチャ
KR20160144329A (ko) * 2015-06-08 2016-12-16 어플라이드 머티어리얼스, 인코포레이티드 액침 필드 가이드 노광 및 노광-후 베이크 프로세스
KR102610050B1 (ko) 2015-06-08 2023-12-04 어플라이드 머티어리얼스, 인코포레이티드 액침 필드 가이드 노광 및 노광-후 베이크 프로세스
JP2021150319A (ja) * 2020-03-16 2021-09-27 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP7437985B2 (ja) 2020-03-16 2024-02-26 東京エレクトロン株式会社 基板処理装置および基板処理方法

Also Published As

Publication number Publication date
US6257168B1 (en) 2001-07-10
KR20010072968A (ko) 2001-07-31
WO2001001444A1 (en) 2001-01-04
CN1316095A (zh) 2001-10-03
AU5908500A (en) 2001-01-31
KR100743874B1 (ko) 2007-07-30
TW464924B (en) 2001-11-21
EP1108263B1 (en) 2008-02-13
CN1150593C (zh) 2004-05-19
EP1108263A1 (en) 2001-06-20

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