KR100743874B1 - 향상된 고정 균등 링 설계 - Google Patents

향상된 고정 균등 링 설계 Download PDF

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Publication number
KR100743874B1
KR100743874B1 KR1020017002408A KR20017002408A KR100743874B1 KR 100743874 B1 KR100743874 B1 KR 100743874B1 KR 1020017002408 A KR1020017002408 A KR 1020017002408A KR 20017002408 A KR20017002408 A KR 20017002408A KR 100743874 B1 KR100743874 B1 KR 100743874B1
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South Korea
Prior art keywords
substrate
ring
plasma processing
chamber
processing reactor
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KR1020017002408A
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Korean (ko)
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KR20010072968A (ko
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투키앙 니
웬리 콜리슨
Original Assignee
램 리써치 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020017002408A 1999-06-30 2000-06-29 향상된 고정 균등 링 설계 Expired - Lifetime KR100743874B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/346,564 US6257168B1 (en) 1999-06-30 1999-06-30 Elevated stationary uniformity ring design
US09/346,564 1999-06-30

Publications (2)

Publication Number Publication Date
KR20010072968A KR20010072968A (ko) 2001-07-31
KR100743874B1 true KR100743874B1 (ko) 2007-07-30

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ID=23360003

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KR1020017002408A Expired - Lifetime KR100743874B1 (ko) 1999-06-30 2000-06-29 향상된 고정 균등 링 설계

Country Status (8)

Country Link
US (1) US6257168B1 (https=)
EP (1) EP1108263B1 (https=)
JP (1) JP2003503840A (https=)
KR (1) KR100743874B1 (https=)
CN (1) CN1150593C (https=)
AU (1) AU5908500A (https=)
TW (1) TW464924B (https=)
WO (1) WO2001001444A1 (https=)

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US20050059250A1 (en) * 2001-06-21 2005-03-17 Savas Stephen Edward Fast etching system and process for organic materials
US20060191637A1 (en) * 2001-06-21 2006-08-31 John Zajac Etching Apparatus and Process with Thickness and Uniformity Control
US6838387B1 (en) 2001-06-21 2005-01-04 John Zajac Fast etching system and process
US20030070620A1 (en) 2001-10-15 2003-04-17 Cooperberg David J. Tunable multi-zone gas injection system
US6884717B1 (en) 2002-01-03 2005-04-26 The United States Of America As Represented By The Secretary Of The Air Force Stiffened backside fabrication for microwave radio frequency wafers
US7075771B2 (en) * 2003-05-21 2006-07-11 Tokyo Electron Limited Apparatus and methods for compensating plasma sheath non-uniformities at the substrate in a plasma processing system
EP1480250A1 (en) * 2003-05-22 2004-11-24 HELYSSEN S.à.r.l. A high density plasma reactor and RF-antenna therefor
JP4418193B2 (ja) * 2003-08-22 2010-02-17 東京エレクトロン株式会社 パーティクル除去装置及びパーティクル除去方法及びプラズマ処理装置
GB0323001D0 (en) 2003-10-01 2003-11-05 Oxford Instr Plasma Technology Apparatus and method for plasma treating a substrate
US7138067B2 (en) * 2004-09-27 2006-11-21 Lam Research Corporation Methods and apparatus for tuning a set of plasma processing steps
US7578945B2 (en) * 2004-09-27 2009-08-25 Lam Research Corporation Method and apparatus for tuning a set of plasma processing steps
US20060172542A1 (en) * 2005-01-28 2006-08-03 Applied Materials, Inc. Method and apparatus to confine plasma and to enhance flow conductance
KR100672828B1 (ko) * 2005-06-29 2007-01-22 삼성전자주식회사 챔버 인서트 및 이를 포함하는 기판 가공 장치
US7879184B2 (en) * 2006-06-20 2011-02-01 Lam Research Corporation Apparatuses, systems and methods for rapid cleaning of plasma confinement rings with minimal erosion of other chamber parts
GB0616131D0 (en) * 2006-08-14 2006-09-20 Oxford Instr Plasma Technology Surface processing apparatus
SG10201703432XA (en) * 2007-04-27 2017-06-29 Applied Materials Inc Annular baffle
US20120083129A1 (en) 2010-10-05 2012-04-05 Skyworks Solutions, Inc. Apparatus and methods for focusing plasma
US9478428B2 (en) * 2010-10-05 2016-10-25 Skyworks Solutions, Inc. Apparatus and methods for shielding a plasma etcher electrode
KR101895307B1 (ko) 2011-03-01 2018-10-04 어플라이드 머티어리얼스, 인코포레이티드 듀얼 로드락 구성의 저감 및 스트립 프로세스 챔버
WO2012148568A1 (en) 2011-03-01 2012-11-01 Applied Materials, Inc. Method and apparatus for substrate transfer and radical confinement
US11171008B2 (en) 2011-03-01 2021-11-09 Applied Materials, Inc. Abatement and strip process chamber in a dual load lock configuration
JP6046128B2 (ja) * 2011-05-31 2016-12-14 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 誘導結合プラズマ（ｉｃｐ）リアクタ用動的イオンラジカルシーブ及びイオンラジカルアパーチャ
JP6545460B2 (ja) 2012-02-29 2019-07-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ロードロック構成内の除害・剥離処理チャンバ
JP5917477B2 (ja) * 2013-11-29 2016-05-18 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
US9829790B2 (en) * 2015-06-08 2017-11-28 Applied Materials, Inc. Immersion field guided exposure and post-exposure bake process
KR102553629B1 (ko) * 2016-06-17 2023-07-11 삼성전자주식회사 플라즈마 처리 장치
US11538713B2 (en) * 2017-12-05 2022-12-27 Lam Research Corporation System and method for edge ring wear compensation
KR20190092154A (ko) 2018-01-30 2019-08-07 삼성전자주식회사 반도체 설비의 실링 장치 및 기류 산포 제어 장치
CN110911303B (zh) * 2018-09-14 2022-05-27 北京北方华创微电子装备有限公司 易碎管件的固定组件及半导体加工设备
JP7612618B2 (ja) * 2019-06-18 2025-01-14 ラム リサーチ コーポレーション 基板処理システム用の縮径キャリアリングハードウェア
FI129610B (en) * 2020-01-10 2022-05-31 Picosun Oy SUBSTRATE PROCESSING EQUIPMENT AND METHOD
JP7437985B2 (ja) * 2020-03-16 2024-02-26 東京エレクトロン株式会社 基板処理装置および基板処理方法
US20230066418A1 (en) * 2021-08-30 2023-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Focus ring for a plasma-based semiconductor processing tool
JP7650254B2 (ja) * 2022-09-14 2025-03-24 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法、及びプログラム

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JPS61131453A (ja) * 1984-11-30 1986-06-19 Fujitsu Ltd ヱツチング方法

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JPH0415918A (ja) * 1990-05-09 1992-01-21 Fujitsu Ltd ドライエッチング装置
US5662770A (en) * 1993-04-16 1997-09-02 Micron Technology, Inc. Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks
JP2638443B2 (ja) * 1993-08-31 1997-08-06 日本電気株式会社 ドライエッチング方法およびドライエッチング装置
JPH0786252A (ja) * 1993-09-20 1995-03-31 Fujitsu Ltd ドライエッチング装置とドライエッチング方法
US5463525A (en) * 1993-12-20 1995-10-31 International Business Machines Corporation Guard ring electrostatic chuck
US5685914A (en) 1994-04-05 1997-11-11 Applied Materials, Inc. Focus ring for semiconductor wafer processing in a plasma reactor
JP3210207B2 (ja) * 1994-04-20 2001-09-17 東京エレクトロン株式会社 プラズマ処理装置
US5552124A (en) * 1994-06-22 1996-09-03 Applied Materials, Inc. Stationary focus ring for plasma reactor
JP3150058B2 (ja) * 1994-12-05 2001-03-26 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
TW323387B (https=) * 1995-06-07 1997-12-21 Tokyo Electron Co Ltd
JP3192370B2 (ja) * 1995-06-08 2001-07-23 東京エレクトロン株式会社 プラズマ処理装置
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JP4602545B2 (ja) * 1997-09-16 2010-12-22 アプライド マテリアルズ インコーポレイテッド プラズマチャンバの半導体ワークピース用シュラウド

Patent Citations (1)

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JPS61131453A (ja) * 1984-11-30 1986-06-19 Fujitsu Ltd ヱツチング方法

Also Published As

Publication number Publication date
US6257168B1 (en) 2001-07-10
KR20010072968A (ko) 2001-07-31
WO2001001444A1 (en) 2001-01-04
CN1316095A (zh) 2001-10-03
AU5908500A (en) 2001-01-31
TW464924B (en) 2001-11-21
JP2003503840A (ja) 2003-01-28
EP1108263B1 (en) 2008-02-13
CN1150593C (zh) 2004-05-19
EP1108263A1 (en) 2001-06-20

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