CN1150593C - 改进的固定均匀环设计 - Google Patents

改进的固定均匀环设计 Download PDF

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Publication number
CN1150593C
CN1150593C CNB008012636A CN00801263A CN1150593C CN 1150593 C CN1150593 C CN 1150593C CN B008012636 A CNB008012636 A CN B008012636A CN 00801263 A CN00801263 A CN 00801263A CN 1150593 C CN1150593 C CN 1150593C
Authority
CN
China
Prior art keywords
substrate
uniformity ring
ring
chamber
plasma processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB008012636A
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English (en)
Chinese (zh)
Other versions
CN1316095A (zh
Inventor
T
T·尼
�������ɭ
W·科利森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN1316095A publication Critical patent/CN1316095A/zh
Application granted granted Critical
Publication of CN1150593C publication Critical patent/CN1150593C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CNB008012636A 1999-06-30 2000-06-29 改进的固定均匀环设计 Expired - Fee Related CN1150593C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/346,564 US6257168B1 (en) 1999-06-30 1999-06-30 Elevated stationary uniformity ring design
US09/346,564 1999-06-30
US09/346564 1999-06-30

Publications (2)

Publication Number Publication Date
CN1316095A CN1316095A (zh) 2001-10-03
CN1150593C true CN1150593C (zh) 2004-05-19

Family

ID=23360003

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB008012636A Expired - Fee Related CN1150593C (zh) 1999-06-30 2000-06-29 改进的固定均匀环设计

Country Status (8)

Country Link
US (1) US6257168B1 (https=)
EP (1) EP1108263B1 (https=)
JP (1) JP2003503840A (https=)
KR (1) KR100743874B1 (https=)
CN (1) CN1150593C (https=)
AU (1) AU5908500A (https=)
TW (1) TW464924B (https=)
WO (1) WO2001001444A1 (https=)

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EP1480250A1 (en) * 2003-05-22 2004-11-24 HELYSSEN S.à.r.l. A high density plasma reactor and RF-antenna therefor
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US7138067B2 (en) * 2004-09-27 2006-11-21 Lam Research Corporation Methods and apparatus for tuning a set of plasma processing steps
US7578945B2 (en) * 2004-09-27 2009-08-25 Lam Research Corporation Method and apparatus for tuning a set of plasma processing steps
US20060172542A1 (en) * 2005-01-28 2006-08-03 Applied Materials, Inc. Method and apparatus to confine plasma and to enhance flow conductance
KR100672828B1 (ko) * 2005-06-29 2007-01-22 삼성전자주식회사 챔버 인서트 및 이를 포함하는 기판 가공 장치
US7879184B2 (en) * 2006-06-20 2011-02-01 Lam Research Corporation Apparatuses, systems and methods for rapid cleaning of plasma confinement rings with minimal erosion of other chamber parts
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US20120083129A1 (en) 2010-10-05 2012-04-05 Skyworks Solutions, Inc. Apparatus and methods for focusing plasma
US9478428B2 (en) * 2010-10-05 2016-10-25 Skyworks Solutions, Inc. Apparatus and methods for shielding a plasma etcher electrode
KR101895307B1 (ko) 2011-03-01 2018-10-04 어플라이드 머티어리얼스, 인코포레이티드 듀얼 로드락 구성의 저감 및 스트립 프로세스 챔버
WO2012148568A1 (en) 2011-03-01 2012-11-01 Applied Materials, Inc. Method and apparatus for substrate transfer and radical confinement
US11171008B2 (en) 2011-03-01 2021-11-09 Applied Materials, Inc. Abatement and strip process chamber in a dual load lock configuration
JP6046128B2 (ja) * 2011-05-31 2016-12-14 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 誘導結合プラズマ（ｉｃｐ）リアクタ用動的イオンラジカルシーブ及びイオンラジカルアパーチャ
JP6545460B2 (ja) 2012-02-29 2019-07-17 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ロードロック構成内の除害・剥離処理チャンバ
JP5917477B2 (ja) * 2013-11-29 2016-05-18 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
US9829790B2 (en) * 2015-06-08 2017-11-28 Applied Materials, Inc. Immersion field guided exposure and post-exposure bake process
KR102553629B1 (ko) * 2016-06-17 2023-07-11 삼성전자주식회사 플라즈마 처리 장치
US11538713B2 (en) * 2017-12-05 2022-12-27 Lam Research Corporation System and method for edge ring wear compensation
KR20190092154A (ko) 2018-01-30 2019-08-07 삼성전자주식회사 반도체 설비의 실링 장치 및 기류 산포 제어 장치
CN110911303B (zh) * 2018-09-14 2022-05-27 北京北方华创微电子装备有限公司 易碎管件的固定组件及半导体加工设备
JP7612618B2 (ja) * 2019-06-18 2025-01-14 ラム リサーチ コーポレーション 基板処理システム用の縮径キャリアリングハードウェア
FI129610B (en) * 2020-01-10 2022-05-31 Picosun Oy SUBSTRATE PROCESSING EQUIPMENT AND METHOD
JP7437985B2 (ja) * 2020-03-16 2024-02-26 東京エレクトロン株式会社 基板処理装置および基板処理方法
US20230066418A1 (en) * 2021-08-30 2023-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Focus ring for a plasma-based semiconductor processing tool
JP7650254B2 (ja) * 2022-09-14 2025-03-24 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法、及びプログラム

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Also Published As

Publication number Publication date
US6257168B1 (en) 2001-07-10
KR20010072968A (ko) 2001-07-31
WO2001001444A1 (en) 2001-01-04
CN1316095A (zh) 2001-10-03
AU5908500A (en) 2001-01-31
KR100743874B1 (ko) 2007-07-30
TW464924B (en) 2001-11-21
JP2003503840A (ja) 2003-01-28
EP1108263B1 (en) 2008-02-13
EP1108263A1 (en) 2001-06-20

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Granted publication date: 20040519

Termination date: 20140629

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