JP2003324937A - 駆動装置 - Google Patents

駆動装置

Info

Publication number
JP2003324937A
JP2003324937A JP2002133960A JP2002133960A JP2003324937A JP 2003324937 A JP2003324937 A JP 2003324937A JP 2002133960 A JP2002133960 A JP 2002133960A JP 2002133960 A JP2002133960 A JP 2002133960A JP 2003324937 A JP2003324937 A JP 2003324937A
Authority
JP
Japan
Prior art keywords
conduction
control signal
circuit
signal
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002133960A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003324937A5 (enExample
Inventor
Kiyoto Watabe
毅代登 渡部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2002133960A priority Critical patent/JP2003324937A/ja
Priority to TW091123108A priority patent/TW569532B/zh
Priority to US10/265,685 priority patent/US6664822B2/en
Priority to CNA2005100701229A priority patent/CN1677856A/zh
Priority to DE10257438A priority patent/DE10257438A1/de
Priority to CNB021561249A priority patent/CN1210868C/zh
Publication of JP2003324937A publication Critical patent/JP2003324937A/ja
Publication of JP2003324937A5 publication Critical patent/JP2003324937A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/538—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a push-pull configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
  • Logic Circuits (AREA)
  • Inverter Devices (AREA)
JP2002133960A 2002-05-09 2002-05-09 駆動装置 Pending JP2003324937A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002133960A JP2003324937A (ja) 2002-05-09 2002-05-09 駆動装置
TW091123108A TW569532B (en) 2002-05-09 2002-10-07 Driving device having dummy circuit
US10/265,685 US6664822B2 (en) 2002-05-09 2002-10-08 Driving device having dummy circuit
CNA2005100701229A CN1677856A (zh) 2002-05-09 2002-12-09 驱动装置
DE10257438A DE10257438A1 (de) 2002-05-09 2002-12-09 Treibervorrichtung
CNB021561249A CN1210868C (zh) 2002-05-09 2002-12-09 驱动装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002133960A JP2003324937A (ja) 2002-05-09 2002-05-09 駆動装置

Publications (2)

Publication Number Publication Date
JP2003324937A true JP2003324937A (ja) 2003-11-14
JP2003324937A5 JP2003324937A5 (enExample) 2005-05-12

Family

ID=29397437

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002133960A Pending JP2003324937A (ja) 2002-05-09 2002-05-09 駆動装置

Country Status (5)

Country Link
US (1) US6664822B2 (enExample)
JP (1) JP2003324937A (enExample)
CN (2) CN1677856A (enExample)
DE (1) DE10257438A1 (enExample)
TW (1) TW569532B (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008211337A (ja) * 2007-02-23 2008-09-11 Mitsubishi Electric Corp 半導体装置
US7521982B2 (en) 2006-03-08 2009-04-21 Mitsubishi Electric Corporation Drive circuit for driving power device
JP2014158192A (ja) * 2013-02-18 2014-08-28 Mitsubishi Electric Corp 駆動回路
JP2014204378A (ja) * 2013-04-09 2014-10-27 三菱電機株式会社 レベルシフト回路
JP2015154197A (ja) * 2014-02-13 2015-08-24 株式会社デンソー スイッチング素子駆動装置
JP6024825B2 (ja) * 2013-06-25 2016-11-16 富士電機株式会社 信号伝達回路
JP2019146073A (ja) * 2018-02-22 2019-08-29 ルネサスエレクトロニクス株式会社 レベルシフト回路

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4113491B2 (ja) * 2003-12-15 2008-07-09 三菱電機株式会社 半導体装置
US7176723B2 (en) * 2005-02-18 2007-02-13 Semiconductor Components Industries Llc Translator circuit and method therefor
US20070001285A1 (en) * 2005-06-30 2007-01-04 Hem Takiar Apparatus having reduced warpage in an over-molded IC package
US20070004094A1 (en) * 2005-06-30 2007-01-04 Hem Takiar Method of reducing warpage in an over-molded IC package
US7538438B2 (en) * 2005-06-30 2009-05-26 Sandisk Corporation Substrate warpage control and continuous electrical enhancement
JP5082574B2 (ja) * 2007-05-07 2012-11-28 三菱電機株式会社 半導体装置
US7843237B2 (en) * 2008-11-17 2010-11-30 Infineon Technologies Austria Ag Circuit arrangement for actuating a transistor
ITMI20082297A1 (it) * 2008-12-23 2010-06-24 St Microelectronics Srl Dispositivo di filtraggio dei segnali di ingresso ad un circuito bistabile e circuito di controllo di transistor comprendente detto dispositivo di filtraggio ed il circuito bistabile.
DE102009037486B3 (de) * 2009-08-13 2011-07-28 Texas Instruments Deutschland GmbH, 85356 Elektronische Vorrichtung und Verfahren zur effizienten Pegelverschiebung
JP5267402B2 (ja) * 2009-09-29 2013-08-21 三菱電機株式会社 半導体回路
US8044699B1 (en) * 2010-07-19 2011-10-25 Polar Semiconductor, Inc. Differential high voltage level shifter
US8405422B2 (en) * 2010-09-30 2013-03-26 Fuji Electric Co., Ltd. Level shift circuit
JP6094032B2 (ja) * 2011-08-26 2017-03-15 サンケン電気株式会社 レベルシフト回路
TWI481194B (zh) * 2012-02-10 2015-04-11 Richtek Technology Corp 浮接閘驅動器電路以及在浮接閘驅動器電路中為單端準位平移器改善抗雜訊能力的電路與方法
GB2500937B (en) * 2012-04-05 2015-04-08 Control Tech Ltd Fail-safe interface
JP5862520B2 (ja) * 2012-08-31 2016-02-16 三菱電機株式会社 逆レベルシフト回路
JP6304966B2 (ja) * 2013-08-05 2018-04-04 三菱電機株式会社 半導体駆動装置及び半導体装置
CN104638882B (zh) * 2013-11-12 2017-11-24 登丰微电子股份有限公司 信号准位移转电路及直流转直流降压转换控制电路
US9379708B2 (en) 2014-08-15 2016-06-28 Allegro Microsystems, Llc Switch driver circuit and associated methods
JP6362476B2 (ja) * 2014-08-26 2018-07-25 ローム株式会社 ハイサイドトランジスタのゲート駆動回路、スイッチング出力回路、インバータ装置、電子機器
US9425785B1 (en) * 2015-07-14 2016-08-23 Allegro Microsystems, Llc Switching regulator with controllable slew rate
US10164481B2 (en) 2016-11-21 2018-12-25 Witricity Corporation Current shunt monitor
US9875776B1 (en) * 2016-11-29 2018-01-23 Qualcomm Incorporated Bit writability implementation for memories
JP6731884B2 (ja) * 2017-05-19 2020-07-29 三菱電機株式会社 ハイサイドゲート駆動回路、半導体モジュール、および３相インバータシステム
US10044350B1 (en) * 2017-05-25 2018-08-07 Navitas Semiconductor, Inc. Power FET driver
US10348139B2 (en) 2017-09-29 2019-07-09 Witricity Corporation Configurable wireless charging transmit and receive monitoring device
FR3089078B1 (fr) * 2018-11-23 2020-12-11 Commissariat Energie Atomique Circuit de commande de transistors de puissance
US11695330B2 (en) * 2019-09-11 2023-07-04 Analog Devices International Unlimited Company Method to reduce the common-mode EMI of a full bridge converter using sampling common-mode feedback

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03169273A (ja) * 1989-11-22 1991-07-22 Mitsubishi Electric Corp スイッチングデバイス駆動回路
JP2763237B2 (ja) 1992-11-02 1998-06-11 株式会社日立製作所 レベルシフト回路及びこれを用いたインバータ装置
EP0666703A1 (en) * 1994-02-08 1995-08-09 HUANG, Wen-Liang Power transistor driving circuit of electromagnetic induction heating device
WO1996032778A2 (en) * 1995-04-10 1996-10-17 Philips Electronics N.V. Level-shifting circuit and high-side driver including such a level-shifting circuit
JPH0920017A (ja) 1995-07-06 1997-01-21 Canon Inc インクジェット記録装置
JP3429937B2 (ja) 1996-01-12 2003-07-28 三菱電機株式会社 半導体装置
JP3635975B2 (ja) 1999-03-02 2005-04-06 富士電機デバイステクノロジー株式会社 レベルシフト回路

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7521982B2 (en) 2006-03-08 2009-04-21 Mitsubishi Electric Corporation Drive circuit for driving power device
JP2008211337A (ja) * 2007-02-23 2008-09-11 Mitsubishi Electric Corp 半導体装置
JP2014158192A (ja) * 2013-02-18 2014-08-28 Mitsubishi Electric Corp 駆動回路
JP2014204378A (ja) * 2013-04-09 2014-10-27 三菱電機株式会社 レベルシフト回路
JP6024825B2 (ja) * 2013-06-25 2016-11-16 富士電機株式会社 信号伝達回路
JP2015154197A (ja) * 2014-02-13 2015-08-24 株式会社デンソー スイッチング素子駆動装置
JP2019146073A (ja) * 2018-02-22 2019-08-29 ルネサスエレクトロニクス株式会社 レベルシフト回路

Also Published As

Publication number Publication date
US6664822B2 (en) 2003-12-16
DE10257438A1 (de) 2003-11-27
CN1677856A (zh) 2005-10-05
US20030210081A1 (en) 2003-11-13
TW569532B (en) 2004-01-01
CN1457148A (zh) 2003-11-19
CN1210868C (zh) 2005-07-13

Similar Documents

Publication Publication Date Title
JP2003324937A (ja) 駆動装置
US8390341B2 (en) Output circuit
JP5011585B2 (ja) 電力素子の駆動回路
US7893730B2 (en) Level shifter and driving circuit including the same
KR20010075401A (ko) 하프-브리지 구성에서 모스페트 바디 다이오드 전도를감소시키는 방법 및 장치
JP5114818B2 (ja) 電流検出方法、電流検出回路及び過電流保護回路
US10211826B2 (en) Electronic switch, and corresponding device and method
US10411691B2 (en) Semiconductor device driving circuit
KR20170006291A (ko) 파워-온 리셋 회로 및 이를 포함하는 저전압 차단 회로
US10411638B2 (en) Semiconductor integrated circuit
US7746155B2 (en) Circuit and method for transistor turn-off with strong pulldown
JP2002335679A (ja) ドライブ回路
US20100052435A1 (en) Switching circuit, signal output device and test apparatus
WO2005119280A3 (en) Bi-directional current sensing by monitoring vs voltage in a half or full bridge circuit
US10447268B2 (en) Level shifter circuit, corresponding device and method
JP2018074676A (ja) ゲート駆動回路
KR100794776B1 (ko) 고속 과도에 내성인 차동 레벨 쉬프팅 장치
JP4727360B2 (ja) 絶縁ゲート型半導体素子のゲート回路
KR100736056B1 (ko) 제어 발진기 시스템 및 방법
KR19980050807A (ko) 고출력 전압 생성용 반도체 회로
JP3657486B2 (ja) スイッチ素子駆動回路
JP2003338740A (ja) 高耐圧スイッチング回路
JP6314823B2 (ja) 開閉用スイッチング素子の駆動回路及び開閉用スイッチング素子の駆動装置
JP4055707B2 (ja) 駆動回路
CN113346885B (zh) 单刀双掷开关电路

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040624

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040624

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060606

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060620

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20061017