TW569532B - Driving device having dummy circuit - Google Patents

Driving device having dummy circuit Download PDF

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Publication number
TW569532B
TW569532B TW091123108A TW91123108A TW569532B TW 569532 B TW569532 B TW 569532B TW 091123108 A TW091123108 A TW 091123108A TW 91123108 A TW91123108 A TW 91123108A TW 569532 B TW569532 B TW 569532B
Authority
TW
Taiwan
Prior art keywords
signal
conduction
circuit
potential
control signal
Prior art date
Application number
TW091123108A
Other languages
English (en)
Chinese (zh)
Inventor
Kiyoto Watabe
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW569532B publication Critical patent/TW569532B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
    • H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
    • H02M7/48—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/538—Conversion of DC power input into AC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a push-pull configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
  • Logic Circuits (AREA)
  • Inverter Devices (AREA)
TW091123108A 2002-05-09 2002-10-07 Driving device having dummy circuit TW569532B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002133960A JP2003324937A (ja) 2002-05-09 2002-05-09 駆動装置

Publications (1)

Publication Number Publication Date
TW569532B true TW569532B (en) 2004-01-01

Family

ID=29397437

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091123108A TW569532B (en) 2002-05-09 2002-10-07 Driving device having dummy circuit

Country Status (5)

Country Link
US (1) US6664822B2 (enExample)
JP (1) JP2003324937A (enExample)
CN (2) CN1677856A (enExample)
DE (1) DE10257438A1 (enExample)
TW (1) TW569532B (enExample)

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* Cited by examiner, † Cited by third party
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JP4113491B2 (ja) * 2003-12-15 2008-07-09 三菱電機株式会社 半導体装置
US7176723B2 (en) * 2005-02-18 2007-02-13 Semiconductor Components Industries Llc Translator circuit and method therefor
US20070001285A1 (en) * 2005-06-30 2007-01-04 Hem Takiar Apparatus having reduced warpage in an over-molded IC package
US20070004094A1 (en) * 2005-06-30 2007-01-04 Hem Takiar Method of reducing warpage in an over-molded IC package
US7538438B2 (en) * 2005-06-30 2009-05-26 Sandisk Corporation Substrate warpage control and continuous electrical enhancement
JP4672575B2 (ja) 2006-03-08 2011-04-20 三菱電機株式会社 パワーデバイスの駆動回路
JP4816500B2 (ja) * 2007-02-23 2011-11-16 三菱電機株式会社 半導体装置
JP5082574B2 (ja) * 2007-05-07 2012-11-28 三菱電機株式会社 半導体装置
US7843237B2 (en) * 2008-11-17 2010-11-30 Infineon Technologies Austria Ag Circuit arrangement for actuating a transistor
ITMI20082297A1 (it) * 2008-12-23 2010-06-24 St Microelectronics Srl Dispositivo di filtraggio dei segnali di ingresso ad un circuito bistabile e circuito di controllo di transistor comprendente detto dispositivo di filtraggio ed il circuito bistabile.
DE102009037486B3 (de) * 2009-08-13 2011-07-28 Texas Instruments Deutschland GmbH, 85356 Elektronische Vorrichtung und Verfahren zur effizienten Pegelverschiebung
JP5267402B2 (ja) * 2009-09-29 2013-08-21 三菱電機株式会社 半導体回路
US8044699B1 (en) * 2010-07-19 2011-10-25 Polar Semiconductor, Inc. Differential high voltage level shifter
US8405422B2 (en) * 2010-09-30 2013-03-26 Fuji Electric Co., Ltd. Level shift circuit
JP6094032B2 (ja) * 2011-08-26 2017-03-15 サンケン電気株式会社 レベルシフト回路
TWI481194B (zh) * 2012-02-10 2015-04-11 Richtek Technology Corp 浮接閘驅動器電路以及在浮接閘驅動器電路中為單端準位平移器改善抗雜訊能力的電路與方法
GB2500937B (en) * 2012-04-05 2015-04-08 Control Tech Ltd Fail-safe interface
JP5862520B2 (ja) * 2012-08-31 2016-02-16 三菱電機株式会社 逆レベルシフト回路
JP5936564B2 (ja) * 2013-02-18 2016-06-22 三菱電機株式会社 駆動回路
JP5936577B2 (ja) * 2013-04-09 2016-06-22 三菱電機株式会社 レベルシフト回路
CN104904108B (zh) * 2013-06-25 2017-06-30 富士电机株式会社 信号传递电路
JP6304966B2 (ja) * 2013-08-05 2018-04-04 三菱電機株式会社 半導体駆動装置及び半導体装置
CN104638882B (zh) * 2013-11-12 2017-11-24 登丰微电子股份有限公司 信号准位移转电路及直流转直流降压转换控制电路
JP6107698B2 (ja) * 2014-02-13 2017-04-05 株式会社デンソー スイッチング素子駆動装置
US9379708B2 (en) 2014-08-15 2016-06-28 Allegro Microsystems, Llc Switch driver circuit and associated methods
JP6362476B2 (ja) * 2014-08-26 2018-07-25 ローム株式会社 ハイサイドトランジスタのゲート駆動回路、スイッチング出力回路、インバータ装置、電子機器
US9425785B1 (en) * 2015-07-14 2016-08-23 Allegro Microsystems, Llc Switching regulator with controllable slew rate
US10164481B2 (en) 2016-11-21 2018-12-25 Witricity Corporation Current shunt monitor
US9875776B1 (en) * 2016-11-29 2018-01-23 Qualcomm Incorporated Bit writability implementation for memories
JP6731884B2 (ja) * 2017-05-19 2020-07-29 三菱電機株式会社 ハイサイドゲート駆動回路、半導体モジュール、および３相インバータシステム
US10044350B1 (en) * 2017-05-25 2018-08-07 Navitas Semiconductor, Inc. Power FET driver
US10348139B2 (en) 2017-09-29 2019-07-09 Witricity Corporation Configurable wireless charging transmit and receive monitoring device
JP6955458B2 (ja) * 2018-02-22 2021-10-27 ルネサスエレクトロニクス株式会社 レベルシフト回路
FR3089078B1 (fr) * 2018-11-23 2020-12-11 Commissariat Energie Atomique Circuit de commande de transistors de puissance
US11695330B2 (en) * 2019-09-11 2023-07-04 Analog Devices International Unlimited Company Method to reduce the common-mode EMI of a full bridge converter using sampling common-mode feedback

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03169273A (ja) * 1989-11-22 1991-07-22 Mitsubishi Electric Corp スイッチングデバイス駆動回路
JP2763237B2 (ja) 1992-11-02 1998-06-11 株式会社日立製作所 レベルシフト回路及びこれを用いたインバータ装置
EP0666703A1 (en) * 1994-02-08 1995-08-09 HUANG, Wen-Liang Power transistor driving circuit of electromagnetic induction heating device
WO1996032778A2 (en) * 1995-04-10 1996-10-17 Philips Electronics N.V. Level-shifting circuit and high-side driver including such a level-shifting circuit
JPH0920017A (ja) 1995-07-06 1997-01-21 Canon Inc インクジェット記録装置
JP3429937B2 (ja) 1996-01-12 2003-07-28 三菱電機株式会社 半導体装置
JP3635975B2 (ja) 1999-03-02 2005-04-06 富士電機デバイステクノロジー株式会社 レベルシフト回路

Also Published As

Publication number Publication date
US6664822B2 (en) 2003-12-16
DE10257438A1 (de) 2003-11-27
CN1677856A (zh) 2005-10-05
US20030210081A1 (en) 2003-11-13
JP2003324937A (ja) 2003-11-14
CN1457148A (zh) 2003-11-19
CN1210868C (zh) 2005-07-13

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GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees