JP2003318127A - 結晶化半導体膜の製造装置および製造方法ならびに位相シフトマスク - Google Patents
結晶化半導体膜の製造装置および製造方法ならびに位相シフトマスクInfo
- Publication number
- JP2003318127A JP2003318127A JP2002120313A JP2002120313A JP2003318127A JP 2003318127 A JP2003318127 A JP 2003318127A JP 2002120313 A JP2002120313 A JP 2002120313A JP 2002120313 A JP2002120313 A JP 2002120313A JP 2003318127 A JP2003318127 A JP 2003318127A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- light
- phase shift
- crystallized
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000010363 phase shift Effects 0.000 title claims abstract description 67
- 239000004065 semiconductor Substances 0.000 title claims description 60
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000000034 method Methods 0.000 title description 48
- 230000003287 optical effect Effects 0.000 claims description 30
- 238000003384 imaging method Methods 0.000 claims description 14
- 238000000149 argon plasma sintering Methods 0.000 claims description 3
- 230000004907 flux Effects 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 claims description 3
- 239000011358 absorbing material Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 20
- 238000005286 illumination Methods 0.000 abstract description 7
- 238000009826 distribution Methods 0.000 description 21
- 239000013078 crystal Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- NCGICGYLBXGBGN-UHFFFAOYSA-N 3-morpholin-4-yl-1-oxa-3-azonia-2-azanidacyclopent-3-en-5-imine;hydrochloride Chemical compound Cl.[N-]1OC(=N)C=[N+]1N1CCOCC1 NCGICGYLBXGBGN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 210000001747 pupil Anatomy 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 101000617550 Dictyostelium discoideum Presenilin-A Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910006501 ZrSiO Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003259 poly(silylenemethylene) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002120313A JP2003318127A (ja) | 2002-04-23 | 2002-04-23 | 結晶化半導体膜の製造装置および製造方法ならびに位相シフトマスク |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002120313A JP2003318127A (ja) | 2002-04-23 | 2002-04-23 | 結晶化半導体膜の製造装置および製造方法ならびに位相シフトマスク |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003318127A true JP2003318127A (ja) | 2003-11-07 |
| JP2003318127A5 JP2003318127A5 (enExample) | 2005-09-29 |
Family
ID=29536573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002120313A Pending JP2003318127A (ja) | 2002-04-23 | 2002-04-23 | 結晶化半導体膜の製造装置および製造方法ならびに位相シフトマスク |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003318127A (enExample) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005244195A (ja) * | 2004-01-27 | 2005-09-08 | Advanced Lcd Technologies Development Center Co Ltd | 光照射装置、結晶化装置、結晶化方法、デバイス、および光学変調素子 |
| JP2005268764A (ja) * | 2004-02-17 | 2005-09-29 | Advanced Lcd Technologies Development Center Co Ltd | 光照射装置、光照射方法、結晶化装置、結晶化方法、デバイス、および光変調素子 |
| JP2006024753A (ja) * | 2004-07-08 | 2006-01-26 | Advanced Lcd Technologies Development Center Co Ltd | 薄膜トランジスタの製造方法、薄膜トランジスタ、半導体装置の製造方法および表示装置 |
| JP2006049481A (ja) * | 2004-08-03 | 2006-02-16 | Advanced Lcd Technologies Development Center Co Ltd | 結晶化装置、結晶化方法、および位相変調素子 |
| JP2006049480A (ja) * | 2004-08-03 | 2006-02-16 | Advanced Lcd Technologies Development Center Co Ltd | 結晶化装置、結晶化方法、および位相変調素子 |
| CN100350553C (zh) * | 2003-12-29 | 2007-11-21 | 京东方显示器科技公司 | 多晶硅膜的形成方法 |
| US7464364B2 (en) | 2004-06-10 | 2008-12-09 | Advanced Lcd Technologies Development Center Co., Ltd. | Thin-film transistor circuit, design method for thin-film transistor, design program for thin-film transistor circuit, design program recording medium, design library database, and display device |
| KR100971583B1 (ko) | 2004-02-17 | 2010-07-20 | 가부시키가이샤 에키쇼센탄 기쥬쓰 가이하쓰센타 | 광 조사장치, 광 조사방법, 결정화 장치, 결정화 방법, 디바이스 및 광 변조소자 |
| JP2012004574A (ja) * | 2004-06-10 | 2012-01-05 | Sharp Corp | 設計ライブラリデータベース |
-
2002
- 2002-04-23 JP JP2002120313A patent/JP2003318127A/ja active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100350553C (zh) * | 2003-12-29 | 2007-11-21 | 京东方显示器科技公司 | 多晶硅膜的形成方法 |
| JP2005244195A (ja) * | 2004-01-27 | 2005-09-08 | Advanced Lcd Technologies Development Center Co Ltd | 光照射装置、結晶化装置、結晶化方法、デバイス、および光学変調素子 |
| JP2005268764A (ja) * | 2004-02-17 | 2005-09-29 | Advanced Lcd Technologies Development Center Co Ltd | 光照射装置、光照射方法、結晶化装置、結晶化方法、デバイス、および光変調素子 |
| KR100971583B1 (ko) | 2004-02-17 | 2010-07-20 | 가부시키가이샤 에키쇼센탄 기쥬쓰 가이하쓰센타 | 광 조사장치, 광 조사방법, 결정화 장치, 결정화 방법, 디바이스 및 광 변조소자 |
| US7464364B2 (en) | 2004-06-10 | 2008-12-09 | Advanced Lcd Technologies Development Center Co., Ltd. | Thin-film transistor circuit, design method for thin-film transistor, design program for thin-film transistor circuit, design program recording medium, design library database, and display device |
| JP2012004574A (ja) * | 2004-06-10 | 2012-01-05 | Sharp Corp | 設計ライブラリデータベース |
| US8255842B2 (en) | 2004-06-10 | 2012-08-28 | Sharp Kabushiki Kaisha | Thin-film transistor circuit, design method for thin-film transistor, design program for thin-film transistor circuit, design program recording medium, design library database, and display device |
| JP2006024753A (ja) * | 2004-07-08 | 2006-01-26 | Advanced Lcd Technologies Development Center Co Ltd | 薄膜トランジスタの製造方法、薄膜トランジスタ、半導体装置の製造方法および表示装置 |
| JP2006049481A (ja) * | 2004-08-03 | 2006-02-16 | Advanced Lcd Technologies Development Center Co Ltd | 結晶化装置、結晶化方法、および位相変調素子 |
| JP2006049480A (ja) * | 2004-08-03 | 2006-02-16 | Advanced Lcd Technologies Development Center Co Ltd | 結晶化装置、結晶化方法、および位相変調素子 |
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