JP2003297748A - 半導体装置の製造方法及び電気光学装置、電子機器 - Google Patents
半導体装置の製造方法及び電気光学装置、電子機器Info
- Publication number
- JP2003297748A JP2003297748A JP2002101836A JP2002101836A JP2003297748A JP 2003297748 A JP2003297748 A JP 2003297748A JP 2002101836 A JP2002101836 A JP 2002101836A JP 2002101836 A JP2002101836 A JP 2002101836A JP 2003297748 A JP2003297748 A JP 2003297748A
- Authority
- JP
- Japan
- Prior art keywords
- film
- forming
- insulating substrate
- protective film
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 238000005530 etching Methods 0.000 claims abstract description 38
- 238000001953 recrystallisation Methods 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 254
- 230000001681 protective effect Effects 0.000 claims description 71
- 239000010409 thin film Substances 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 44
- 239000011347 resin Substances 0.000 claims description 30
- 229920005989 resin Polymers 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 8
- 229920001187 thermosetting polymer Polymers 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 238000004080 punching Methods 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 44
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 44
- 239000011521 glass Substances 0.000 abstract description 29
- 238000001020 plasma etching Methods 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 229910052710 silicon Inorganic materials 0.000 description 23
- 239000010703 silicon Substances 0.000 description 23
- 229910052782 aluminium Inorganic materials 0.000 description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 21
- 239000013078 crystal Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 101000592773 Halobacterium salinarum (strain ATCC 700922 / JCM 11081 / NRC-1) 50S ribosomal protein L22 Proteins 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002101836A JP2003297748A (ja) | 2002-04-03 | 2002-04-03 | 半導体装置の製造方法及び電気光学装置、電子機器 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002101836A JP2003297748A (ja) | 2002-04-03 | 2002-04-03 | 半導体装置の製造方法及び電気光学装置、電子機器 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003297748A true JP2003297748A (ja) | 2003-10-17 |
| JP2003297748A5 JP2003297748A5 (enrdf_load_stackoverflow) | 2005-09-15 |
Family
ID=29388787
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002101836A Withdrawn JP2003297748A (ja) | 2002-04-03 | 2002-04-03 | 半導体装置の製造方法及び電気光学装置、電子機器 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003297748A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005209786A (ja) * | 2004-01-21 | 2005-08-04 | Seiko Epson Corp | 半導体装置およびその製造方法 |
| KR100777963B1 (ko) | 2006-06-21 | 2007-11-21 | 삼성전기주식회사 | 테이퍼 패턴의 스탬프 및 이를 이용한 고분자 스탬프의제조방법 |
| JP2010040392A (ja) * | 2008-08-06 | 2010-02-18 | Fuji Xerox Co Ltd | パターニング方法、有機電気素子、有機電界発光素子、及び有機半導体トランジスタ |
| KR101184022B1 (ko) | 2010-06-29 | 2012-09-18 | 한국산업기술대학교산학협력단 | 반응성 이온 식각 장치 및 상기 반응성 이온 식각 장치를 이용한 태양전지의 텍스쳐링 방법 |
-
2002
- 2002-04-03 JP JP2002101836A patent/JP2003297748A/ja not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005209786A (ja) * | 2004-01-21 | 2005-08-04 | Seiko Epson Corp | 半導体装置およびその製造方法 |
| KR100777963B1 (ko) | 2006-06-21 | 2007-11-21 | 삼성전기주식회사 | 테이퍼 패턴의 스탬프 및 이를 이용한 고분자 스탬프의제조방법 |
| JP2010040392A (ja) * | 2008-08-06 | 2010-02-18 | Fuji Xerox Co Ltd | パターニング方法、有機電気素子、有機電界発光素子、及び有機半導体トランジスタ |
| KR101184022B1 (ko) | 2010-06-29 | 2012-09-18 | 한국산업기술대학교산학협력단 | 반응성 이온 식각 장치 및 상기 반응성 이온 식각 장치를 이용한 태양전지의 텍스쳐링 방법 |
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