JP2003287875A - マスクの製造方法および半導体集積回路装置の製造方法 - Google Patents

マスクの製造方法および半導体集積回路装置の製造方法

Info

Publication number
JP2003287875A
JP2003287875A JP2002202071A JP2002202071A JP2003287875A JP 2003287875 A JP2003287875 A JP 2003287875A JP 2002202071 A JP2002202071 A JP 2002202071A JP 2002202071 A JP2002202071 A JP 2002202071A JP 2003287875 A JP2003287875 A JP 2003287875A
Authority
JP
Japan
Prior art keywords
mask
inspection
light
manufacturing
resist film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002202071A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003287875A5 (enExample
Inventor
Norio Hasegawa
昇雄 長谷川
Katsuya Hayano
勝也 早野
Shinji Kubo
真二 久保
Yasuhiro Koizumi
裕弘 古泉
Hironobu Takatani
洋宣 高谷
Morihisa Hogen
盛久 法元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Hitachi Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd, Hitachi Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP2002202071A priority Critical patent/JP2003287875A/ja
Priority to TW092100884A priority patent/TWI262546B/zh
Priority to KR10-2003-0004538A priority patent/KR20030064315A/ko
Priority to US10/349,026 priority patent/US6841399B2/en
Priority to CN03103366A priority patent/CN1455439A/zh
Publication of JP2003287875A publication Critical patent/JP2003287875A/ja
Publication of JP2003287875A5 publication Critical patent/JP2003287875A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/56—Organic absorbers, e.g. of photo-resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/949—Energy beam treating radiation resist on semiconductor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2002202071A 2002-01-24 2002-07-11 マスクの製造方法および半導体集積回路装置の製造方法 Pending JP2003287875A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2002202071A JP2003287875A (ja) 2002-01-24 2002-07-11 マスクの製造方法および半導体集積回路装置の製造方法
TW092100884A TWI262546B (en) 2002-01-24 2003-01-16 Manufacturing method of mask and manufacturing method of semiconductor integrated circuit device
KR10-2003-0004538A KR20030064315A (ko) 2002-01-24 2003-01-23 마스크의 제조 방법 및 반도체 집적 회로 장치의 제조 방법
US10/349,026 US6841399B2 (en) 2002-01-24 2003-01-23 Method of manufacturing mask and method of manufacturing semiconductor integrated circuit device
CN03103366A CN1455439A (zh) 2002-01-24 2003-01-24 掩模的制造方法和半导体集成电路器件的制造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002-15525 2002-01-24
JP2002015525 2002-01-24
JP2002202071A JP2003287875A (ja) 2002-01-24 2002-07-11 マスクの製造方法および半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JP2003287875A true JP2003287875A (ja) 2003-10-10
JP2003287875A5 JP2003287875A5 (enExample) 2005-10-27

Family

ID=26625622

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002202071A Pending JP2003287875A (ja) 2002-01-24 2002-07-11 マスクの製造方法および半導体集積回路装置の製造方法

Country Status (5)

Country Link
US (1) US6841399B2 (enExample)
JP (1) JP2003287875A (enExample)
KR (1) KR20030064315A (enExample)
CN (1) CN1455439A (enExample)
TW (1) TWI262546B (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7252910B2 (en) 2003-01-23 2007-08-07 Renesas Technology Corp. Fabrication method of semiconductor integrated circuit device and mask fabrication method
JP2015230273A (ja) * 2014-06-06 2015-12-21 株式会社ニューフレアテクノロジー マスク検査装置及びマスク検査方法
JP2016033656A (ja) * 2014-07-30 2016-03-10 ジェニシス ゲーエムベーハー マスク基板上へマスクレイアウトを転写する際のプロセスによる誤差の補正
JP2020086280A (ja) * 2018-11-29 2020-06-04 大日本印刷株式会社 異物の除去方法、および、フォトマスクの製造方法
JP2021004920A (ja) * 2019-06-25 2021-01-14 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法

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* Cited by examiner, † Cited by third party
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US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
TWI333228B (en) 2006-01-13 2010-11-11 Ind Tech Res Inst Method of fabricating field emission display device and cathode plate thereof
KR100793241B1 (ko) * 2006-06-19 2008-01-10 삼성전자주식회사 실리콘 고분자 및 포토레지스트 제거용 조성물, 이를이용한 막 제거 방법 및 패턴 형성 방법
US20090042115A1 (en) * 2007-04-10 2009-02-12 Nikon Corporation Exposure apparatus, exposure method, and electronic device manufacturing method
US20090042139A1 (en) * 2007-04-10 2009-02-12 Nikon Corporation Exposure method and electronic device manufacturing method
US20080270970A1 (en) * 2007-04-27 2008-10-30 Nikon Corporation Method for processing pattern data and method for manufacturing electronic device
JP5133047B2 (ja) * 2007-12-28 2013-01-30 太陽誘電株式会社 電子部品の製造方法
JP4663749B2 (ja) * 2008-03-11 2011-04-06 大日本印刷株式会社 反射型マスクの検査方法および製造方法
JP5331638B2 (ja) * 2008-11-04 2013-10-30 Ｈｏｙａ株式会社 表示装置製造用フォトマスクの製造方法及び描画装置
EP2738791B1 (en) * 2009-02-16 2015-08-19 Dai Nippon Printing Co., Ltd. Method for correcting a photomask
JP5566265B2 (ja) * 2010-11-09 2014-08-06 東京エレクトロン株式会社 基板処理装置、プログラム、コンピュータ記憶媒体及び基板の搬送方法
CN102637457B (zh) * 2011-02-14 2015-06-17 张国飙 保密型三维掩膜编程只读存储器
US20120210438A1 (en) * 2011-02-15 2012-08-16 Guobiao Zhang Secure Three-Dimensional Mask-Programmed Read-Only Memory
CN103367190B (zh) * 2013-06-27 2016-03-02 上海华力微电子有限公司 应用真空环境检测光阻与氮化硅薄膜契合度的方法
JP2015025758A (ja) * 2013-07-26 2015-02-05 Hoya株式会社 基板検査方法、基板製造方法および基板検査装置
WO2019058528A1 (ja) * 2017-09-22 2019-03-28 シャープ株式会社 表示装置の製造方法
US20240071971A1 (en) * 2022-08-31 2024-02-29 LAPIS Technology Co., Ltd. Semiconductor device and manufacturing method of semiconductor device

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JPH06124876A (ja) * 1992-10-12 1994-05-06 Hitachi Ltd 光学素子及び光学素子の製造方法
JPH06342205A (ja) * 1993-04-09 1994-12-13 Dainippon Printing Co Ltd 位相シフトフォトマスク、位相シフトフォトマスク用ブランクス及びそれらの製造方法
JPH1010700A (ja) * 1996-06-27 1998-01-16 Nec Corp フォトマスク及びその製造方法
JPH10242023A (ja) * 1997-02-26 1998-09-11 Hitachi Ltd 半導体集積回路の製造方法
JPH1152551A (ja) * 1997-07-29 1999-02-26 Toshiba Corp 露光用マスクとそのパターン評価方法及び評価装置
JP2001249082A (ja) * 2001-01-12 2001-09-14 Hitachi Ltd 異物検査装置
JP2001324795A (ja) * 2000-05-16 2001-11-22 Hitachi Ltd ホトマスクおよび半導体集積回路の製造方法

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JPS5830129A (ja) 1981-08-17 1983-02-22 Hitachi Ltd 精密平面移動装置
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JPH061370B2 (ja) * 1983-11-24 1994-01-05 株式会社東芝 マスク欠陥検査装置
US5123743A (en) * 1990-02-28 1992-06-23 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Lithography mask inspection
JP2566048B2 (ja) 1990-04-19 1996-12-25 シャープ株式会社 光露光用マスク及びその製造方法
EP0464614B1 (en) 1990-06-25 1999-09-29 Matsushita Electronics Corporation A composition having sensitivity to light or radiation
JP3120474B2 (ja) 1991-06-10 2000-12-25 株式会社日立製作所 半導体集積回路装置の製造方法
JPH05289307A (ja) 1992-04-13 1993-11-05 Matsushita Electric Ind Co Ltd レチクルおよびレチクル製造方法
KR970006927B1 (ko) 1992-11-10 1997-04-30 다이 니뽄 인사쯔 가부시키가이샤 위상시프트 포토마스크 및 그 제조방법
JPH0792096A (ja) * 1993-07-30 1995-04-07 Canon Inc 異物検査装置並びにこれを備えた露光装置及びデバイ スの製造方法
US5376483A (en) 1993-10-07 1994-12-27 Micron Semiconductor, Inc. Method of making masks for phase shifting lithography
KR0170686B1 (ko) 1995-09-13 1999-03-20 김광호 하프톤 위상반전마스크의 제조방법
US5948572A (en) 1997-11-26 1999-09-07 United Microelectronics Corp. Mixed mode photomask for nikon stepper
US5989760A (en) 1998-03-18 1999-11-23 Motorola, Inc. Method of processing a substrate utilizing specific chuck

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Publication number Priority date Publication date Assignee Title
JPH06124876A (ja) * 1992-10-12 1994-05-06 Hitachi Ltd 光学素子及び光学素子の製造方法
JPH06342205A (ja) * 1993-04-09 1994-12-13 Dainippon Printing Co Ltd 位相シフトフォトマスク、位相シフトフォトマスク用ブランクス及びそれらの製造方法
JPH1010700A (ja) * 1996-06-27 1998-01-16 Nec Corp フォトマスク及びその製造方法
JPH10242023A (ja) * 1997-02-26 1998-09-11 Hitachi Ltd 半導体集積回路の製造方法
JPH1152551A (ja) * 1997-07-29 1999-02-26 Toshiba Corp 露光用マスクとそのパターン評価方法及び評価装置
JP2001324795A (ja) * 2000-05-16 2001-11-22 Hitachi Ltd ホトマスクおよび半導体集積回路の製造方法
JP2001249082A (ja) * 2001-01-12 2001-09-14 Hitachi Ltd 異物検査装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7252910B2 (en) 2003-01-23 2007-08-07 Renesas Technology Corp. Fabrication method of semiconductor integrated circuit device and mask fabrication method
JP2015230273A (ja) * 2014-06-06 2015-12-21 株式会社ニューフレアテクノロジー マスク検査装置及びマスク検査方法
JP2016033656A (ja) * 2014-07-30 2016-03-10 ジェニシス ゲーエムベーハー マスク基板上へマスクレイアウトを転写する際のプロセスによる誤差の補正
US10409946B2 (en) 2014-07-30 2019-09-10 Genisys Gmbh Process artefact compensation upon transfer of a mask layout onto a mask substrate
JP2020086280A (ja) * 2018-11-29 2020-06-04 大日本印刷株式会社 異物の除去方法、および、フォトマスクの製造方法
JP7334408B2 (ja) 2018-11-29 2023-08-29 大日本印刷株式会社 異物の除去方法、および、フォトマスクの製造方法
JP2021004920A (ja) * 2019-06-25 2021-01-14 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法

Also Published As

Publication number Publication date
US6841399B2 (en) 2005-01-11
US20030139055A1 (en) 2003-07-24
CN1455439A (zh) 2003-11-12
TW200305924A (en) 2003-11-01
KR20030064315A (ko) 2003-07-31
TWI262546B (en) 2006-09-21

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