TWI262546B - Manufacturing method of mask and manufacturing method of semiconductor integrated circuit device - Google Patents
Manufacturing method of mask and manufacturing method of semiconductor integrated circuit device Download PDFInfo
- Publication number
- TWI262546B TWI262546B TW092100884A TW92100884A TWI262546B TW I262546 B TWI262546 B TW I262546B TW 092100884 A TW092100884 A TW 092100884A TW 92100884 A TW92100884 A TW 92100884A TW I262546 B TWI262546 B TW I262546B
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- mask
- inspection
- reticle
- manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 69
- 239000004065 semiconductor Substances 0.000 title claims description 52
- 238000007689 inspection Methods 0.000 claims abstract description 163
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 156
- 238000000034 method Methods 0.000 claims abstract description 121
- 230000007547 defect Effects 0.000 claims abstract description 104
- 230000003287 optical effect Effects 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims description 90
- 229910052751 metal Inorganic materials 0.000 claims description 52
- 239000002184 metal Substances 0.000 claims description 52
- 230000008569 process Effects 0.000 claims description 47
- 238000012546 transfer Methods 0.000 claims description 30
- 238000012545 processing Methods 0.000 claims description 25
- 230000008859 change Effects 0.000 claims description 19
- 238000011161 development Methods 0.000 claims description 19
- 238000001514 detection method Methods 0.000 claims description 15
- 230000002829 reductive effect Effects 0.000 claims description 15
- 230000002950 deficient Effects 0.000 claims description 14
- 230000035945 sensitivity Effects 0.000 claims description 9
- 230000005540 biological transmission Effects 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 239000000376 reactant Substances 0.000 claims description 7
- 238000005286 illumination Methods 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 abstract 1
- 230000035515 penetration Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 204
- 238000010894 electron beam technology Methods 0.000 description 102
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 17
- 239000010410 layer Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 16
- 239000011651 chromium Substances 0.000 description 14
- 230000018109 developmental process Effects 0.000 description 14
- 229910052804 chromium Inorganic materials 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 9
- 230000001939 inductive effect Effects 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 230000006698 induction Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 7
- 238000012937 correction Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 238000002835 absorbance Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- 238000006552 photochemical reaction Methods 0.000 description 3
- 230000008929 regeneration Effects 0.000 description 3
- 238000011069 regeneration method Methods 0.000 description 3
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- VZPPHXVFMVZRTE-UHFFFAOYSA-N [Kr]F Chemical compound [Kr]F VZPPHXVFMVZRTE-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000007687 exposure technique Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- CMDNLASDNCWLDE-UHFFFAOYSA-N [La].[La].[Ce] Chemical compound [La].[La].[Ce] CMDNLASDNCWLDE-UHFFFAOYSA-N 0.000 description 1
- APUGIHICMSAKGR-UHFFFAOYSA-N [Y]=O Chemical compound [Y]=O APUGIHICMSAKGR-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- QCLQZCOGUCNIOC-UHFFFAOYSA-N azanylidynelanthanum Chemical compound [La]#N QCLQZCOGUCNIOC-UHFFFAOYSA-N 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000010485 coping Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- -1 silver halide Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- CXXKWLMXEDWEJW-UHFFFAOYSA-N tellanylidenecobalt Chemical compound [Te]=[Co] CXXKWLMXEDWEJW-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 230000002087 whitening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/56—Organic absorbers, e.g. of photo-resists
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/949—Energy beam treating radiation resist on semiconductor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002015525 | 2002-01-24 | ||
| JP2002202071A JP2003287875A (ja) | 2002-01-24 | 2002-07-11 | マスクの製造方法および半導体集積回路装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200305924A TW200305924A (en) | 2003-11-01 |
| TWI262546B true TWI262546B (en) | 2006-09-21 |
Family
ID=26625622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092100884A TWI262546B (en) | 2002-01-24 | 2003-01-16 | Manufacturing method of mask and manufacturing method of semiconductor integrated circuit device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6841399B2 (enExample) |
| JP (1) | JP2003287875A (enExample) |
| KR (1) | KR20030064315A (enExample) |
| CN (1) | CN1455439A (enExample) |
| TW (1) | TWI262546B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI409579B (zh) * | 2008-11-04 | 2013-09-21 | Hoya Corp | 光罩之製造方法、描繪裝置、光罩之檢查方法及光罩之檢查裝置 |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004226717A (ja) | 2003-01-23 | 2004-08-12 | Renesas Technology Corp | マスクの製造方法および半導体集積回路装置の製造方法 |
| US7018560B2 (en) * | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
| TWI333228B (en) | 2006-01-13 | 2010-11-11 | Ind Tech Res Inst | Method of fabricating field emission display device and cathode plate thereof |
| KR100793241B1 (ko) * | 2006-06-19 | 2008-01-10 | 삼성전자주식회사 | 실리콘 고분자 및 포토레지스트 제거용 조성물, 이를이용한 막 제거 방법 및 패턴 형성 방법 |
| US20090042115A1 (en) * | 2007-04-10 | 2009-02-12 | Nikon Corporation | Exposure apparatus, exposure method, and electronic device manufacturing method |
| US20090042139A1 (en) * | 2007-04-10 | 2009-02-12 | Nikon Corporation | Exposure method and electronic device manufacturing method |
| US20080270970A1 (en) * | 2007-04-27 | 2008-10-30 | Nikon Corporation | Method for processing pattern data and method for manufacturing electronic device |
| JP5133047B2 (ja) * | 2007-12-28 | 2013-01-30 | 太陽誘電株式会社 | 電子部品の製造方法 |
| JP4663749B2 (ja) * | 2008-03-11 | 2011-04-06 | 大日本印刷株式会社 | 反射型マスクの検査方法および製造方法 |
| EP2738791B1 (en) * | 2009-02-16 | 2015-08-19 | Dai Nippon Printing Co., Ltd. | Method for correcting a photomask |
| JP5566265B2 (ja) * | 2010-11-09 | 2014-08-06 | 東京エレクトロン株式会社 | 基板処理装置、プログラム、コンピュータ記憶媒体及び基板の搬送方法 |
| CN102637457B (zh) * | 2011-02-14 | 2015-06-17 | 张国飙 | 保密型三维掩膜编程只读存储器 |
| US20120210438A1 (en) * | 2011-02-15 | 2012-08-16 | Guobiao Zhang | Secure Three-Dimensional Mask-Programmed Read-Only Memory |
| CN103367190B (zh) * | 2013-06-27 | 2016-03-02 | 上海华力微电子有限公司 | 应用真空环境检测光阻与氮化硅薄膜契合度的方法 |
| JP2015025758A (ja) * | 2013-07-26 | 2015-02-05 | Hoya株式会社 | 基板検査方法、基板製造方法および基板検査装置 |
| JP6373074B2 (ja) * | 2014-06-06 | 2018-08-15 | 株式会社ニューフレアテクノロジー | マスク検査装置及びマスク検査方法 |
| EP2980646B1 (en) | 2014-07-30 | 2020-09-02 | GenISys GmbH | Process artefact compensation upon transfer of a mask layout onto a mask substrate |
| WO2019058528A1 (ja) * | 2017-09-22 | 2019-03-28 | シャープ株式会社 | 表示装置の製造方法 |
| JP7334408B2 (ja) * | 2018-11-29 | 2023-08-29 | 大日本印刷株式会社 | 異物の除去方法、および、フォトマスクの製造方法 |
| JP2021004920A (ja) * | 2019-06-25 | 2021-01-14 | Hoya株式会社 | マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法 |
| US20240071971A1 (en) * | 2022-08-31 | 2024-02-29 | LAPIS Technology Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4684971A (en) | 1981-03-13 | 1987-08-04 | American Telephone And Telegraph Company, At&T Bell Laboratories | Ion implanted CMOS devices |
| JPS5830129A (ja) | 1981-08-17 | 1983-02-22 | Hitachi Ltd | 精密平面移動装置 |
| JPS5922050A (ja) | 1982-07-28 | 1984-02-04 | Victor Co Of Japan Ltd | ホトマスク |
| JPH061370B2 (ja) * | 1983-11-24 | 1994-01-05 | 株式会社東芝 | マスク欠陥検査装置 |
| US5123743A (en) * | 1990-02-28 | 1992-06-23 | Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College | Lithography mask inspection |
| JP2566048B2 (ja) | 1990-04-19 | 1996-12-25 | シャープ株式会社 | 光露光用マスク及びその製造方法 |
| EP0464614B1 (en) | 1990-06-25 | 1999-09-29 | Matsushita Electronics Corporation | A composition having sensitivity to light or radiation |
| JP3120474B2 (ja) | 1991-06-10 | 2000-12-25 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
| JPH05289307A (ja) | 1992-04-13 | 1993-11-05 | Matsushita Electric Ind Co Ltd | レチクルおよびレチクル製造方法 |
| JP3240189B2 (ja) * | 1992-10-12 | 2001-12-17 | 株式会社日立製作所 | 光学素子及び光学素子の製造方法 |
| KR970006927B1 (ko) | 1992-11-10 | 1997-04-30 | 다이 니뽄 인사쯔 가부시키가이샤 | 위상시프트 포토마스크 및 그 제조방법 |
| JP3262302B2 (ja) * | 1993-04-09 | 2002-03-04 | 大日本印刷株式会社 | 位相シフトフォトマスク、位相シフトフォトマスク用ブランクス及びそれらの製造方法 |
| JPH0792096A (ja) * | 1993-07-30 | 1995-04-07 | Canon Inc | 異物検査装置並びにこれを備えた露光装置及びデバイ スの製造方法 |
| US5376483A (en) | 1993-10-07 | 1994-12-27 | Micron Semiconductor, Inc. | Method of making masks for phase shifting lithography |
| KR0170686B1 (ko) | 1995-09-13 | 1999-03-20 | 김광호 | 하프톤 위상반전마스크의 제조방법 |
| JP2790127B2 (ja) * | 1996-06-27 | 1998-08-27 | 日本電気株式会社 | フォトマスク及びその製造方法 |
| JPH10242023A (ja) * | 1997-02-26 | 1998-09-11 | Hitachi Ltd | 半導体集積回路の製造方法 |
| JPH1152551A (ja) * | 1997-07-29 | 1999-02-26 | Toshiba Corp | 露光用マスクとそのパターン評価方法及び評価装置 |
| US5948572A (en) | 1997-11-26 | 1999-09-07 | United Microelectronics Corp. | Mixed mode photomask for nikon stepper |
| US5989760A (en) | 1998-03-18 | 1999-11-23 | Motorola, Inc. | Method of processing a substrate utilizing specific chuck |
| JP2001324795A (ja) * | 2000-05-16 | 2001-11-22 | Hitachi Ltd | ホトマスクおよび半導体集積回路の製造方法 |
| JP3362033B2 (ja) * | 2001-01-12 | 2003-01-07 | 株式会社日立製作所 | 異物検査装置 |
-
2002
- 2002-07-11 JP JP2002202071A patent/JP2003287875A/ja active Pending
-
2003
- 2003-01-16 TW TW092100884A patent/TWI262546B/zh not_active IP Right Cessation
- 2003-01-23 KR KR10-2003-0004538A patent/KR20030064315A/ko not_active Ceased
- 2003-01-23 US US10/349,026 patent/US6841399B2/en not_active Expired - Lifetime
- 2003-01-24 CN CN03103366A patent/CN1455439A/zh active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI409579B (zh) * | 2008-11-04 | 2013-09-21 | Hoya Corp | 光罩之製造方法、描繪裝置、光罩之檢查方法及光罩之檢查裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US6841399B2 (en) | 2005-01-11 |
| US20030139055A1 (en) | 2003-07-24 |
| CN1455439A (zh) | 2003-11-12 |
| TW200305924A (en) | 2003-11-01 |
| JP2003287875A (ja) | 2003-10-10 |
| KR20030064315A (ko) | 2003-07-31 |
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