CN1455439A - 掩模的制造方法和半导体集成电路器件的制造方法 - Google Patents

掩模的制造方法和半导体集成电路器件的制造方法 Download PDF

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Publication number
CN1455439A
CN1455439A CN03103366A CN03103366A CN1455439A CN 1455439 A CN1455439 A CN 1455439A CN 03103366 A CN03103366 A CN 03103366A CN 03103366 A CN03103366 A CN 03103366A CN 1455439 A CN1455439 A CN 1455439A
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CN
China
Prior art keywords
mask
mentioned
light
inspection
manufacture method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN03103366A
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English (en)
Chinese (zh)
Inventor
长谷川昇雄
早野胜也
久保真二
古泉裕弘
高谷洋宣
法元盛久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Hitachi Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd, Hitachi Ltd filed Critical Dai Nippon Printing Co Ltd
Publication of CN1455439A publication Critical patent/CN1455439A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/56—Organic absorbers, e.g. of photo-resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/949—Energy beam treating radiation resist on semiconductor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
CN03103366A 2002-01-24 2003-01-24 掩模的制造方法和半导体集成电路器件的制造方法 Pending CN1455439A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2002015525 2002-01-24
JP015525/2002 2002-01-24
JP2002202071A JP2003287875A (ja) 2002-01-24 2002-07-11 マスクの製造方法および半導体集積回路装置の製造方法
JP202071/2002 2002-07-11

Publications (1)

Publication Number Publication Date
CN1455439A true CN1455439A (zh) 2003-11-12

Family

ID=26625622

Family Applications (1)

Application Number Title Priority Date Filing Date
CN03103366A Pending CN1455439A (zh) 2002-01-24 2003-01-24 掩模的制造方法和半导体集成电路器件的制造方法

Country Status (5)

Country Link
US (1) US6841399B2 (enExample)
JP (1) JP2003287875A (enExample)
KR (1) KR20030064315A (enExample)
CN (1) CN1455439A (enExample)
TW (1) TWI262546B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102308256B (zh) * 2009-02-16 2013-09-25 大日本印刷株式会社 光掩模、光掩模的制造方法及修正方法
CN103367190A (zh) * 2013-06-27 2013-10-23 上海华力微电子有限公司 应用真空环境检测光阻与氮化硅薄膜契合度的方法

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JP2004226717A (ja) 2003-01-23 2004-08-12 Renesas Technology Corp マスクの製造方法および半導体集積回路装置の製造方法
US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
TWI333228B (en) 2006-01-13 2010-11-11 Ind Tech Res Inst Method of fabricating field emission display device and cathode plate thereof
KR100793241B1 (ko) * 2006-06-19 2008-01-10 삼성전자주식회사 실리콘 고분자 및 포토레지스트 제거용 조성물, 이를이용한 막 제거 방법 및 패턴 형성 방법
US20090042115A1 (en) * 2007-04-10 2009-02-12 Nikon Corporation Exposure apparatus, exposure method, and electronic device manufacturing method
US20090042139A1 (en) * 2007-04-10 2009-02-12 Nikon Corporation Exposure method and electronic device manufacturing method
US20080270970A1 (en) * 2007-04-27 2008-10-30 Nikon Corporation Method for processing pattern data and method for manufacturing electronic device
JP5133047B2 (ja) * 2007-12-28 2013-01-30 太陽誘電株式会社 電子部品の製造方法
JP4663749B2 (ja) * 2008-03-11 2011-04-06 大日本印刷株式会社 反射型マスクの検査方法および製造方法
JP5331638B2 (ja) * 2008-11-04 2013-10-30 Ｈｏｙａ株式会社 表示装置製造用フォトマスクの製造方法及び描画装置
JP5566265B2 (ja) * 2010-11-09 2014-08-06 東京エレクトロン株式会社 基板処理装置、プログラム、コンピュータ記憶媒体及び基板の搬送方法
CN102637457B (zh) * 2011-02-14 2015-06-17 张国飙 保密型三维掩膜编程只读存储器
US20120210438A1 (en) * 2011-02-15 2012-08-16 Guobiao Zhang Secure Three-Dimensional Mask-Programmed Read-Only Memory
JP2015025758A (ja) * 2013-07-26 2015-02-05 Hoya株式会社 基板検査方法、基板製造方法および基板検査装置
JP6373074B2 (ja) * 2014-06-06 2018-08-15 株式会社ニューフレアテクノロジー マスク検査装置及びマスク検査方法
EP2980646B1 (en) 2014-07-30 2020-09-02 GenISys GmbH Process artefact compensation upon transfer of a mask layout onto a mask substrate
WO2019058528A1 (ja) * 2017-09-22 2019-03-28 シャープ株式会社 表示装置の製造方法
JP7334408B2 (ja) * 2018-11-29 2023-08-29 大日本印刷株式会社 異物の除去方法、および、フォトマスクの製造方法
JP2021004920A (ja) * 2019-06-25 2021-01-14 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
US20240071971A1 (en) * 2022-08-31 2024-02-29 LAPIS Technology Co., Ltd. Semiconductor device and manufacturing method of semiconductor device

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JPS5830129A (ja) 1981-08-17 1983-02-22 Hitachi Ltd 精密平面移動装置
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JPH061370B2 (ja) * 1983-11-24 1994-01-05 株式会社東芝 マスク欠陥検査装置
US5123743A (en) * 1990-02-28 1992-06-23 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Lithography mask inspection
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JP3120474B2 (ja) 1991-06-10 2000-12-25 株式会社日立製作所 半導体集積回路装置の製造方法
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JP2001324795A (ja) * 2000-05-16 2001-11-22 Hitachi Ltd ホトマスクおよび半導体集積回路の製造方法
JP3362033B2 (ja) * 2001-01-12 2003-01-07 株式会社日立製作所 異物検査装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102308256B (zh) * 2009-02-16 2013-09-25 大日本印刷株式会社 光掩模、光掩模的制造方法及修正方法
CN103367190A (zh) * 2013-06-27 2013-10-23 上海华力微电子有限公司 应用真空环境检测光阻与氮化硅薄膜契合度的方法
CN103367190B (zh) * 2013-06-27 2016-03-02 上海华力微电子有限公司 应用真空环境检测光阻与氮化硅薄膜契合度的方法

Also Published As

Publication number Publication date
US6841399B2 (en) 2005-01-11
US20030139055A1 (en) 2003-07-24
TW200305924A (en) 2003-11-01
JP2003287875A (ja) 2003-10-10
KR20030064315A (ko) 2003-07-31
TWI262546B (en) 2006-09-21

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