JP2003249660A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2003249660A5 JP2003249660A5 JP2003026486A JP2003026486A JP2003249660A5 JP 2003249660 A5 JP2003249660 A5 JP 2003249660A5 JP 2003026486 A JP2003026486 A JP 2003026486A JP 2003026486 A JP2003026486 A JP 2003026486A JP 2003249660 A5 JP2003249660 A5 JP 2003249660A5
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- conductivity type
- insulating film
- dummy gate
- conductive material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 81
- 239000004020 conductor Substances 0.000 claims description 57
- 238000004519 manufacturing process Methods 0.000 claims description 36
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 19
- 230000005669 field effect Effects 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 11
- 239000012212 insulator Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims 29
- 239000000463 material Substances 0.000 claims 28
- 229910052581 Si3N4 Inorganic materials 0.000 claims 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 18
- 238000000151 deposition Methods 0.000 claims 7
- 229910052691 Erbium Inorganic materials 0.000 claims 6
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims 6
- 238000000059 patterning Methods 0.000 claims 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 6
- 229910021332 silicide Inorganic materials 0.000 claims 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 6
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 5
- 239000013078 crystal Substances 0.000 claims 5
- 238000009413 insulation Methods 0.000 claims 4
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 claims 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 3
- 229910021339 platinum silicide Inorganic materials 0.000 claims 3
- 229920005591 polysilicon Polymers 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003026486A JP4093072B2 (ja) | 2003-02-03 | 2003-02-03 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003026486A JP4093072B2 (ja) | 2003-02-03 | 2003-02-03 | 半導体装置およびその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17847099A Division JP3487220B2 (ja) | 1999-06-24 | 1999-06-24 | 電界効果型トランジスタ及び半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003249660A JP2003249660A (ja) | 2003-09-05 |
| JP2003249660A5 true JP2003249660A5 (enExample) | 2004-07-15 |
| JP4093072B2 JP4093072B2 (ja) | 2008-05-28 |
Family
ID=28672852
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003026486A Expired - Fee Related JP4093072B2 (ja) | 2003-02-03 | 2003-02-03 | 半導体装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4093072B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007123527A (ja) * | 2005-10-27 | 2007-05-17 | Toshiba Corp | 半導体装置の製造方法 |
| JP5769160B2 (ja) * | 2008-10-30 | 2015-08-26 | 国立大学法人東北大学 | コンタクト形成方法、半導体装置の製造方法、および半導体装置 |
-
2003
- 2003-02-03 JP JP2003026486A patent/JP4093072B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102456579B (zh) | 具有局部的极薄绝缘体上硅沟道区的半导体器件 | |
| US7985638B2 (en) | Method of manufacturing semiconductor device | |
| JP5091487B2 (ja) | 半導体装置の製造方法 | |
| TWI404145B (zh) | 拉緊的絕緣層上覆矽層結構及其製備方法 | |
| US20080179678A1 (en) | Two-sided semiconductor-on-insulator structures and methods of manufacturing the same | |
| TWI254355B (en) | Strained transistor with hybrid-strain inducing layer | |
| US10950710B2 (en) | Fin-type field effect transistor | |
| JP2006501672A5 (enExample) | ||
| TW200924069A (en) | Method of forming FINFET device | |
| CN109473356B (zh) | 用于形成垂直通道器件的方法、以及垂直通道器件 | |
| KR100669556B1 (ko) | 반도체 소자 및 그 제조 방법 | |
| JP5535486B2 (ja) | 絶縁体上に半導体が設けられた構造（ｓｏｉ）を有するボディコンタクト素子の形成方法及び装置 | |
| JP2009021456A (ja) | フィン型トランジスタおよびその形成方法 | |
| CN109712892B (zh) | Mos器件的制作方法 | |
| JP2003318408A (ja) | 半導体装置およびその製造方法 | |
| JP2006093694A5 (enExample) | ||
| KR100653536B1 (ko) | 반도체 소자의 핀 전계효과 트랜지스터 제조방법 | |
| KR102107537B1 (ko) | 반도체소자 및 그 제조방법 | |
| JPH077773B2 (ja) | 半導体装置の製造方法 | |
| TWI744333B (zh) | 半導體裝置及其製程 | |
| JP3605086B2 (ja) | 電界効果トランジスタ | |
| WO2012000300A1 (zh) | 一种半导体器件及其形成方法 | |
| JP2019192741A (ja) | 半導体装置及び半導体装置の製造方法 | |
| JP2004146825A (ja) | Ｍｏｓトランジスター及びその製造方法 | |
| WO2013155740A1 (zh) | 一种半导体结构及其制造方法 |