JP4093072B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP4093072B2 JP4093072B2 JP2003026486A JP2003026486A JP4093072B2 JP 4093072 B2 JP4093072 B2 JP 4093072B2 JP 2003026486 A JP2003026486 A JP 2003026486A JP 2003026486 A JP2003026486 A JP 2003026486A JP 4093072 B2 JP4093072 B2 JP 4093072B2
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- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003026486A JP4093072B2 (ja) | 2003-02-03 | 2003-02-03 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003026486A JP4093072B2 (ja) | 2003-02-03 | 2003-02-03 | 半導体装置およびその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17847099A Division JP3487220B2 (ja) | 1999-06-24 | 1999-06-24 | 電界効果型トランジスタ及び半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003249660A JP2003249660A (ja) | 2003-09-05 |
| JP2003249660A5 JP2003249660A5 (enExample) | 2004-07-15 |
| JP4093072B2 true JP4093072B2 (ja) | 2008-05-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003026486A Expired - Fee Related JP4093072B2 (ja) | 2003-02-03 | 2003-02-03 | 半導体装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4093072B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007123527A (ja) * | 2005-10-27 | 2007-05-17 | Toshiba Corp | 半導体装置の製造方法 |
| JP5769160B2 (ja) * | 2008-10-30 | 2015-08-26 | 国立大学法人東北大学 | コンタクト形成方法、半導体装置の製造方法、および半導体装置 |
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2003
- 2003-02-03 JP JP2003026486A patent/JP4093072B2/ja not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JP2003249660A (ja) | 2003-09-05 |
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