JP4093072B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP4093072B2
JP4093072B2 JP2003026486A JP2003026486A JP4093072B2 JP 4093072 B2 JP4093072 B2 JP 4093072B2 JP 2003026486 A JP2003026486 A JP 2003026486A JP 2003026486 A JP2003026486 A JP 2003026486A JP 4093072 B2 JP4093072 B2 JP 4093072B2
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gate electrode
conductivity type
insulating film
type
region
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Japanese (ja)
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JP2003249660A (ja
JP2003249660A5 (enExample
Inventor
俐昭 黄
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NEC Corp
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NEC Corp
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  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2003026486A 2003-02-03 2003-02-03 半導体装置およびその製造方法 Expired - Fee Related JP4093072B2 (ja)

Priority Applications (1)

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JP2003026486A JP4093072B2 (ja) 2003-02-03 2003-02-03 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003026486A JP4093072B2 (ja) 2003-02-03 2003-02-03 半導体装置およびその製造方法

Related Parent Applications (1)

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JP17847099A Division JP3487220B2 (ja) 1999-06-24 1999-06-24 電界効果型トランジスタ及び半導体装置

Publications (3)

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JP2003249660A JP2003249660A (ja) 2003-09-05
JP2003249660A5 JP2003249660A5 (enExample) 2004-07-15
JP4093072B2 true JP4093072B2 (ja) 2008-05-28

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007123527A (ja) * 2005-10-27 2007-05-17 Toshiba Corp 半導体装置の製造方法
JP5769160B2 (ja) * 2008-10-30 2015-08-26 国立大学法人東北大学 コンタクト形成方法、半導体装置の製造方法、および半導体装置
JP2023039082A (ja) * 2021-09-08 2023-03-20 キオクシア株式会社 半導体記憶装置

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JP2003249660A (ja) 2003-09-05

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