JP2003233191A - フォト酸レイビルポリマー及びそれを含むフォトレジスト - Google Patents

フォト酸レイビルポリマー及びそれを含むフォトレジスト

Info

Publication number
JP2003233191A
JP2003233191A JP2002376468A JP2002376468A JP2003233191A JP 2003233191 A JP2003233191 A JP 2003233191A JP 2002376468 A JP2002376468 A JP 2002376468A JP 2002376468 A JP2002376468 A JP 2002376468A JP 2003233191 A JP2003233191 A JP 2003233191A
Authority
JP
Japan
Prior art keywords
photoresist
photoacid
groups
resin
optionally substituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002376468A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003233191A5 (enExample
Inventor
George G Barclay
ジョージ・ジー・バークレー
J Bolton Patrick
パトリック・ジェイ・ボルトン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Shipley Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co LLC filed Critical Shipley Co LLC
Publication of JP2003233191A publication Critical patent/JP2003233191A/ja
Publication of JP2003233191A5 publication Critical patent/JP2003233191A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2002376468A 2001-12-28 2002-12-26 フォト酸レイビルポリマー及びそれを含むフォトレジスト Pending JP2003233191A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US34382401P 2001-12-28 2001-12-28
US60/343824 2001-12-28

Publications (2)

Publication Number Publication Date
JP2003233191A true JP2003233191A (ja) 2003-08-22
JP2003233191A5 JP2003233191A5 (enExample) 2006-01-26

Family

ID=29735980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002376468A Pending JP2003233191A (ja) 2001-12-28 2002-12-26 フォト酸レイビルポリマー及びそれを含むフォトレジスト

Country Status (3)

Country Link
US (1) US7022455B2 (enExample)
JP (1) JP2003233191A (enExample)
KR (1) KR100944727B1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210198468A1 (en) * 2019-12-31 2021-07-01 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresist composition and method of manufacturing a semiconductor device
JP2024535940A (ja) * 2021-08-25 2024-10-02 ジェミナティオ，インク． アンチスペーサベースの自己整合高次パターニング

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030235777A1 (en) * 2001-12-31 2003-12-25 Shipley Company, L.L.C. Phenolic polymers, methods for synthesis thereof and photoresist compositions comprising same
TW200506516A (en) * 2003-04-09 2005-02-16 Rohm & Haas Elect Mat Photoresists and methods for use thereof
KR100944227B1 (ko) * 2007-12-17 2010-02-24 제일모직주식회사 방향족 산 분해성 기를 갖는 (메타)아크릴레이트 화합물 및감광성 고분자 및 레지스트 조성물
US9182662B2 (en) 2012-02-15 2015-11-10 Rohm And Haas Electronic Materials Llc Photosensitive copolymer, photoresist comprising the copolymer, and articles formed therefrom
TWI523872B (zh) 2013-02-25 2016-03-01 羅門哈斯電子材料有限公司 光敏共聚物，包括該共聚物之光阻，及形成電子裝置之方法
US9182669B2 (en) 2013-12-19 2015-11-10 Rohm And Haas Electronic Materials Llc Copolymer with acid-labile group, photoresist composition, coated substrate, and method of forming an electronic device
US12276910B2 (en) 2020-07-15 2025-04-15 Dupont Electronic Materials International, Llc Photoresist compositions and pattern formation methods

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2632066B2 (ja) * 1990-04-06 1997-07-16 富士写真フイルム株式会社 ポジ画像の形成方法
US5071730A (en) 1990-04-24 1991-12-10 International Business Machines Corporation Liquid apply, aqueous processable photoresist compositions
US5506088A (en) * 1991-09-17 1996-04-09 Fujitsu Limited Chemically amplified resist composition and process for forming resist pattern using same
JP3114166B2 (ja) * 1992-10-22 2000-12-04 ジェイエスアール株式会社 マイクロレンズ用感放射線性樹脂組成物
US5352564A (en) 1993-01-19 1994-10-04 Shin-Etsu Chemical Co., Ltd. Resist compositions
JPH06324494A (ja) * 1993-05-12 1994-11-25 Fujitsu Ltd パターン形成材料およびパターン形成方法
US5688628A (en) * 1993-11-11 1997-11-18 Nippon Zeon Co., Ltd. Resist composition
JP3116751B2 (ja) 1993-12-03 2000-12-11 ジェイエスアール株式会社 感放射線性樹脂組成物
US5866304A (en) 1993-12-28 1999-02-02 Nec Corporation Photosensitive resin and method for patterning by use of the same
US5580694A (en) 1994-06-27 1996-12-03 International Business Machines Corporation Photoresist composition with androstane and process for its use
US5558971A (en) 1994-09-02 1996-09-24 Wako Pure Chemical Industries, Ltd. Resist material
US5861231A (en) 1996-06-11 1999-01-19 Shipley Company, L.L.C. Copolymers and photoresist compositions comprising copolymer resin binder component
US6136501A (en) 1998-08-28 2000-10-24 Shipley Company, L.L.C. Polymers and photoresist compositions comprising same
JP2000235264A (ja) * 1998-12-14 2000-08-29 Fuji Photo Film Co Ltd ポジ型シリコーン含有感光性組成物
TWI289238B (en) * 2000-01-13 2007-11-01 Fujifilm Corp Negative resist compositions using for electronic irradiation
US6379861B1 (en) 2000-02-22 2002-04-30 Shipley Company, L.L.C. Polymers and photoresist compositions comprising same
EP1143300A1 (en) * 2000-04-03 2001-10-10 Shipley Company LLC Photoresist compositions and use of same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210198468A1 (en) * 2019-12-31 2021-07-01 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresist composition and method of manufacturing a semiconductor device
US12134690B2 (en) * 2019-12-31 2024-11-05 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist composition and method of manufacturing a semiconductor device
JP2024535940A (ja) * 2021-08-25 2024-10-02 ジェミナティオ，インク． アンチスペーサベースの自己整合高次パターニング

Also Published As

Publication number Publication date
US7022455B2 (en) 2006-04-04
KR100944727B1 (ko) 2010-02-26
KR20030076211A (ko) 2003-09-26
US20030232274A1 (en) 2003-12-18

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