KR20030076211A - 포토애시드에 불안정한 중합체 및 이를 포함하는포토레지스트 - Google Patents
포토애시드에 불안정한 중합체 및 이를 포함하는포토레지스트 Download PDFInfo
- Publication number
- KR20030076211A KR20030076211A KR1020020084759A KR20020084759A KR20030076211A KR 20030076211 A KR20030076211 A KR 20030076211A KR 1020020084759 A KR1020020084759 A KR 1020020084759A KR 20020084759 A KR20020084759 A KR 20020084759A KR 20030076211 A KR20030076211 A KR 20030076211A
- Authority
- KR
- South Korea
- Prior art keywords
- photoresist
- photoacid
- groups
- optionally substituted
- polymers
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
Claims (10)
- 아릴알킬 그룹을 함유하는 포토애시드(photoacid) 불안정 단위를 갖는 수지 및 광활성 성분을 포함하는 포토레지스트 조성물.
- 제 1 항에 있어서, 포토애시드 불안정 단위가 페닐알킬 그룹을 포함하는 포토레지스트.
- 제 1 항에 있어서, 포토애시드 불안정 단위가 삼급 벤질 그룹을 포함하는 포토레지스트.
- 제 1 내지 3 항중 어느 한 항에 있어서, 포토애시드 불안정 단위가 에스테르 부분을 포함하는 포토레지스트.
- 제 1 내지 4 항중 어느 한 항에 있어서, 포토애시드 불안정 단위가 아크릴레이트 화합물의 중합으로 제공되는 포토레지스트.
- 제 1 내지 5 항중 어느 한 항에 있어서, 수지가 하이드록시페닐 단위 및/또는 알리사이클릭 그룹을 추가로 포함하는 포토레지스트.
- 제 1 내지 6 항중 어느 한 항에 있어서, 아세탈 포토애시드 불안정 단위를 가지는 수지를 추가로 포함하는 포토레지스트.
- (a) 제 1 내지 7 항중 어느 한 항의 포토레지스트 코팅층을 기판상에 도포하고;(b) 포토레지스트층을 노광 및 현상하여 릴리프 이미지를 제공하는 것을 특징으로 하여 포지티브 포토레지스트 릴리프 이미지를 형성하는 방법.
- 제 1 내지 7 항중 어느 한 항의 포토레지스트 조성물층이 코팅된 마이크로일렉트로닉 웨이퍼 기판을 포함하는 제품.
- 아릴알킬 그룹을 가지는 포토애시드 불안정 단위를 포함하는 수지.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US34382401P | 2001-12-28 | 2001-12-28 | |
US60/343,824 | 2001-12-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030076211A true KR20030076211A (ko) | 2003-09-26 |
KR100944727B1 KR100944727B1 (ko) | 2010-02-26 |
Family
ID=29735980
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020020084759A KR100944727B1 (ko) | 2001-12-28 | 2002-12-27 | 포토애시드에 불안정한 중합체 및 이를 포함하는포토레지스트 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7022455B2 (ko) |
JP (1) | JP2003233191A (ko) |
KR (1) | KR100944727B1 (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030235777A1 (en) * | 2001-12-31 | 2003-12-25 | Shipley Company, L.L.C. | Phenolic polymers, methods for synthesis thereof and photoresist compositions comprising same |
TW200506516A (en) * | 2003-04-09 | 2005-02-16 | Rohm & Haas Elect Mat | Photoresists and methods for use thereof |
KR100944227B1 (ko) * | 2007-12-17 | 2010-02-24 | 제일모직주식회사 | 방향족 산 분해성 기를 갖는 (메타)아크릴레이트 화합물 및감광성 고분자 및 레지스트 조성물 |
US9182662B2 (en) | 2012-02-15 | 2015-11-10 | Rohm And Haas Electronic Materials Llc | Photosensitive copolymer, photoresist comprising the copolymer, and articles formed therefrom |
TWI523872B (zh) | 2013-02-25 | 2016-03-01 | 羅門哈斯電子材料有限公司 | 光敏共聚物,包括該共聚物之光阻,及形成電子裝置之方法 |
US9182669B2 (en) | 2013-12-19 | 2015-11-10 | Rohm And Haas Electronic Materials Llc | Copolymer with acid-labile group, photoresist composition, coated substrate, and method of forming an electronic device |
US20210198468A1 (en) * | 2019-12-31 | 2021-07-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photoresist composition and method of manufacturing a semiconductor device |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2632066B2 (ja) * | 1990-04-06 | 1997-07-16 | 富士写真フイルム株式会社 | ポジ画像の形成方法 |
US5071730A (en) * | 1990-04-24 | 1991-12-10 | International Business Machines Corporation | Liquid apply, aqueous processable photoresist compositions |
US5506088A (en) * | 1991-09-17 | 1996-04-09 | Fujitsu Limited | Chemically amplified resist composition and process for forming resist pattern using same |
JP3114166B2 (ja) * | 1992-10-22 | 2000-12-04 | ジェイエスアール株式会社 | マイクロレンズ用感放射線性樹脂組成物 |
KR0159808B1 (ko) * | 1993-01-19 | 1999-02-18 | 가나가와 지히로 | 레지스트 조성물 |
JPH06324494A (ja) * | 1993-05-12 | 1994-11-25 | Fujitsu Ltd | パターン形成材料およびパターン形成方法 |
US5688628A (en) * | 1993-11-11 | 1997-11-18 | Nippon Zeon Co., Ltd. | Resist composition |
JP3116751B2 (ja) * | 1993-12-03 | 2000-12-11 | ジェイエスアール株式会社 | 感放射線性樹脂組成物 |
US5866304A (en) * | 1993-12-28 | 1999-02-02 | Nec Corporation | Photosensitive resin and method for patterning by use of the same |
US5580694A (en) * | 1994-06-27 | 1996-12-03 | International Business Machines Corporation | Photoresist composition with androstane and process for its use |
US5558971A (en) * | 1994-09-02 | 1996-09-24 | Wako Pure Chemical Industries, Ltd. | Resist material |
US5861231A (en) * | 1996-06-11 | 1999-01-19 | Shipley Company, L.L.C. | Copolymers and photoresist compositions comprising copolymer resin binder component |
US6136501A (en) * | 1998-08-28 | 2000-10-24 | Shipley Company, L.L.C. | Polymers and photoresist compositions comprising same |
JP2000235264A (ja) * | 1998-12-14 | 2000-08-29 | Fuji Photo Film Co Ltd | ポジ型シリコーン含有感光性組成物 |
TWI289238B (en) * | 2000-01-13 | 2007-11-01 | Fujifilm Corp | Negative resist compositions using for electronic irradiation |
US6379861B1 (en) * | 2000-02-22 | 2002-04-30 | Shipley Company, L.L.C. | Polymers and photoresist compositions comprising same |
EP1143300A1 (en) * | 2000-04-03 | 2001-10-10 | Shipley Company LLC | Photoresist compositions and use of same |
-
2002
- 2002-12-20 US US10/327,450 patent/US7022455B2/en not_active Expired - Lifetime
- 2002-12-26 JP JP2002376468A patent/JP2003233191A/ja active Pending
- 2002-12-27 KR KR1020020084759A patent/KR100944727B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP2003233191A (ja) | 2003-08-22 |
US20030232274A1 (en) | 2003-12-18 |
KR100944727B1 (ko) | 2010-02-26 |
US7022455B2 (en) | 2006-04-04 |
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