JP2003229359A - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法

Info

Publication number
JP2003229359A
JP2003229359A JP2002338768A JP2002338768A JP2003229359A JP 2003229359 A JP2003229359 A JP 2003229359A JP 2002338768 A JP2002338768 A JP 2002338768A JP 2002338768 A JP2002338768 A JP 2002338768A JP 2003229359 A JP2003229359 A JP 2003229359A
Authority
JP
Japan
Prior art keywords
semiconductor film
laser
irradiation region
film
crystalline semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002338768A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003229359A5 (enExample
Inventor
Yoshifumi Tanada
好文 棚田
Kazuya Nakajima
和哉 中島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2002338768A priority Critical patent/JP2003229359A/ja
Publication of JP2003229359A publication Critical patent/JP2003229359A/ja
Publication of JP2003229359A5 publication Critical patent/JP2003229359A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Lasers (AREA)
JP2002338768A 2001-11-29 2002-11-22 半導体装置の作製方法 Withdrawn JP2003229359A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002338768A JP2003229359A (ja) 2001-11-29 2002-11-22 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-365302 2001-11-29
JP2001365302 2001-11-29
JP2002338768A JP2003229359A (ja) 2001-11-29 2002-11-22 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2003229359A true JP2003229359A (ja) 2003-08-15
JP2003229359A5 JP2003229359A5 (enExample) 2007-02-15

Family

ID=27759500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002338768A Withdrawn JP2003229359A (ja) 2001-11-29 2002-11-22 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP2003229359A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005259809A (ja) * 2004-03-09 2005-09-22 Mitsubishi Electric Corp レーザ熱処理方法
JP2006093677A (ja) * 2004-08-23 2006-04-06 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2009164652A (ja) * 2009-04-24 2009-07-23 Sharp Corp 多結晶半導体膜の形成方法、半導体デバイスの製造方法及び半導体デバイス製造装置
WO2011141949A1 (ja) * 2010-05-10 2011-11-17 パナソニック株式会社 結晶性半導体膜の製造方法、結晶性半導体膜付き基板、薄膜トランジスタ
US8304313B2 (en) 2004-08-23 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
WO2013051221A1 (ja) * 2011-10-03 2013-04-11 パナソニック株式会社 薄膜素子、薄膜素子アレイ及び薄膜素子の製造方法

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0242717A (ja) * 1988-08-03 1990-02-13 Hitachi Ltd エネルギービーム照射方法
JPH07183540A (ja) * 1993-11-12 1995-07-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JPH07270818A (ja) * 1994-03-28 1995-10-20 Sharp Corp 半導体基板の製造方法およびその製造装置
JPH07302907A (ja) * 1994-04-28 1995-11-14 A G Technol Kk アクティブマトリクス表示素子およびその製造方法
JPH07307304A (ja) * 1994-05-13 1995-11-21 Semiconductor Energy Lab Co Ltd 半導体デバイスのレーザー処理方法
JPH08195357A (ja) * 1995-01-13 1996-07-30 Semiconductor Energy Lab Co Ltd レーザー照射装置
JPH10284418A (ja) * 1997-04-02 1998-10-23 Sharp Corp 薄膜半導体装置およびその製造方法
JP2000277450A (ja) * 1999-03-24 2000-10-06 Matsushita Electric Ind Co Ltd レーザアニール装置及びこの装置を用いた薄膜トランジスタの製造方法
JP2001028440A (ja) * 1999-07-13 2001-01-30 Nec Corp 半導体薄膜及びその形成方法
JP2001044135A (ja) * 1998-07-13 2001-02-16 Semiconductor Energy Lab Co Ltd ビームホモジェナイザーおよびレーザー照射装置およびレーザー照射方法
US20010026835A1 (en) * 2000-03-21 2001-10-04 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP2001338873A (ja) * 2000-03-21 2001-12-07 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0242717A (ja) * 1988-08-03 1990-02-13 Hitachi Ltd エネルギービーム照射方法
JPH07183540A (ja) * 1993-11-12 1995-07-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JPH07270818A (ja) * 1994-03-28 1995-10-20 Sharp Corp 半導体基板の製造方法およびその製造装置
JPH07302907A (ja) * 1994-04-28 1995-11-14 A G Technol Kk アクティブマトリクス表示素子およびその製造方法
JPH07307304A (ja) * 1994-05-13 1995-11-21 Semiconductor Energy Lab Co Ltd 半導体デバイスのレーザー処理方法
JPH08195357A (ja) * 1995-01-13 1996-07-30 Semiconductor Energy Lab Co Ltd レーザー照射装置
JPH10284418A (ja) * 1997-04-02 1998-10-23 Sharp Corp 薄膜半導体装置およびその製造方法
JP2001044135A (ja) * 1998-07-13 2001-02-16 Semiconductor Energy Lab Co Ltd ビームホモジェナイザーおよびレーザー照射装置およびレーザー照射方法
JP2000277450A (ja) * 1999-03-24 2000-10-06 Matsushita Electric Ind Co Ltd レーザアニール装置及びこの装置を用いた薄膜トランジスタの製造方法
JP2001028440A (ja) * 1999-07-13 2001-01-30 Nec Corp 半導体薄膜及びその形成方法
US20010026835A1 (en) * 2000-03-21 2001-10-04 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP2001338873A (ja) * 2000-03-21 2001-12-07 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005259809A (ja) * 2004-03-09 2005-09-22 Mitsubishi Electric Corp レーザ熱処理方法
JP2006093677A (ja) * 2004-08-23 2006-04-06 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US8304313B2 (en) 2004-08-23 2012-11-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP2009164652A (ja) * 2009-04-24 2009-07-23 Sharp Corp 多結晶半導体膜の形成方法、半導体デバイスの製造方法及び半導体デバイス製造装置
WO2011141949A1 (ja) * 2010-05-10 2011-11-17 パナソニック株式会社 結晶性半導体膜の製造方法、結晶性半導体膜付き基板、薄膜トランジスタ
WO2013051221A1 (ja) * 2011-10-03 2013-04-11 パナソニック株式会社 薄膜素子、薄膜素子アレイ及び薄膜素子の製造方法
US9111803B2 (en) 2011-10-03 2015-08-18 Joled Inc. Thin-film device, thin-film device array, and method of manufacturing thin-film device

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