JP2003224070A - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法

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Publication number
JP2003224070A
JP2003224070A JP2001367099A JP2001367099A JP2003224070A JP 2003224070 A JP2003224070 A JP 2003224070A JP 2001367099 A JP2001367099 A JP 2001367099A JP 2001367099 A JP2001367099 A JP 2001367099A JP 2003224070 A JP2003224070 A JP 2003224070A
Authority
JP
Japan
Prior art keywords
semiconductor film
crystalline semiconductor
laser light
film
metal element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2001367099A
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English (en)
Japanese (ja)
Other versions
JP2003224070A5 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Koichiro Tanaka
幸一郎 田中
Hisashi Otani
久 大谷
正明 ▲ひろ▼木
Masaaki Hiroki
Akira Tsunoda
朗 角田
Hiroshi Shibata
寛 柴田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001367099A priority Critical patent/JP2003224070A/ja
Publication of JP2003224070A publication Critical patent/JP2003224070A/ja
Publication of JP2003224070A5 publication Critical patent/JP2003224070A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2001367099A 2001-11-26 2001-11-30 半導体装置の作製方法 Withdrawn JP2003224070A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001367099A JP2003224070A (ja) 2001-11-26 2001-11-30 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001360136 2001-11-26
JP2001-360136 2001-11-26
JP2001367099A JP2003224070A (ja) 2001-11-26 2001-11-30 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2003224070A true JP2003224070A (ja) 2003-08-08
JP2003224070A5 JP2003224070A5 (enExample) 2005-04-28

Family

ID=27759305

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001367099A Withdrawn JP2003224070A (ja) 2001-11-26 2001-11-30 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP2003224070A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005101548A (ja) * 2003-08-15 2005-04-14 Semiconductor Energy Lab Co Ltd レーザ照射方法及びそれを用いた半導体装置の作製方法、並びに半導体装置
JP2005311334A (ja) * 2004-03-26 2005-11-04 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2006261180A (ja) * 2005-03-15 2006-09-28 Hitachi Cable Ltd 薄膜半導体装置の製造方法
JP2007235118A (ja) * 2006-02-02 2007-09-13 Semiconductor Energy Lab Co Ltd 半導体膜の結晶化方法、半導体装置の製造方法、及びレーザ照射装置
JP2012074727A (ja) * 2004-03-26 2012-04-12 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法及びレーザ照射装置
JP2016018816A (ja) * 2014-07-04 2016-02-01 富士電機株式会社 不純物導入方法、不純物導入装置及び半導体素子の製造方法

Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4330363A (en) * 1980-08-28 1982-05-18 Xerox Corporation Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas
JPS62104117A (ja) * 1985-10-31 1987-05-14 Asahi Glass Co Ltd 半導体薄膜の製造方法
JPH01173707A (ja) * 1987-12-28 1989-07-10 Matsushita Electric Ind Co Ltd レーザアニール方法
JPH02181419A (ja) * 1989-01-06 1990-07-16 Hitachi Ltd レーザアニール方法
JPH0897141A (ja) * 1994-09-22 1996-04-12 A G Technol Kk 多結晶半導体層の形成方法、多結晶半導体ｔｆｔ、及びビームアニール装置
JPH08195357A (ja) * 1995-01-13 1996-07-30 Semiconductor Energy Lab Co Ltd レーザー照射装置
JPH08213316A (ja) * 1994-09-29 1996-08-20 Semiconductor Energy Lab Co Ltd 半導体薄膜の作製方法
JPH09312260A (ja) * 1996-01-19 1997-12-02 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JPH1131660A (ja) * 1997-07-14 1999-02-02 Semiconductor Energy Lab Co Ltd 半導体膜の作製方法及び半導体装置の作製方法
JPH11354442A (ja) * 1997-06-06 1999-12-24 Semiconductor Energy Lab Co Ltd 半導体薄膜および半導体装置
JP2000133593A (ja) * 1998-10-28 2000-05-12 Nec Corp レーザ照射装置およびレーザ照射方法
JP2000269161A (ja) * 1999-03-18 2000-09-29 Japan Steel Works Ltd:The レーザ光照射装置
JP2000323428A (ja) * 1999-03-08 2000-11-24 Semiconductor Energy Lab Co Ltd ビームホモジナイザーおよびレーザー照射装置
JP2001144027A (ja) * 1999-08-13 2001-05-25 Semiconductor Energy Lab Co Ltd レーザー装置及びレーザーアニール方法並びに半導体装置の作製方法
JP2001250777A (ja) * 1999-12-28 2001-09-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2001326178A (ja) * 2000-03-08 2001-11-22 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2002231655A (ja) * 2001-01-30 2002-08-16 Ishikawajima Harima Heavy Ind Co Ltd レーザアニール装置

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4330363A (en) * 1980-08-28 1982-05-18 Xerox Corporation Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas
JPS62104117A (ja) * 1985-10-31 1987-05-14 Asahi Glass Co Ltd 半導体薄膜の製造方法
JPH01173707A (ja) * 1987-12-28 1989-07-10 Matsushita Electric Ind Co Ltd レーザアニール方法
JPH02181419A (ja) * 1989-01-06 1990-07-16 Hitachi Ltd レーザアニール方法
JPH0897141A (ja) * 1994-09-22 1996-04-12 A G Technol Kk 多結晶半導体層の形成方法、多結晶半導体ｔｆｔ、及びビームアニール装置
JPH08213316A (ja) * 1994-09-29 1996-08-20 Semiconductor Energy Lab Co Ltd 半導体薄膜の作製方法
JPH08195357A (ja) * 1995-01-13 1996-07-30 Semiconductor Energy Lab Co Ltd レーザー照射装置
JPH09312260A (ja) * 1996-01-19 1997-12-02 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JPH11354442A (ja) * 1997-06-06 1999-12-24 Semiconductor Energy Lab Co Ltd 半導体薄膜および半導体装置
JPH1131660A (ja) * 1997-07-14 1999-02-02 Semiconductor Energy Lab Co Ltd 半導体膜の作製方法及び半導体装置の作製方法
JP2000133593A (ja) * 1998-10-28 2000-05-12 Nec Corp レーザ照射装置およびレーザ照射方法
JP2000323428A (ja) * 1999-03-08 2000-11-24 Semiconductor Energy Lab Co Ltd ビームホモジナイザーおよびレーザー照射装置
JP2000269161A (ja) * 1999-03-18 2000-09-29 Japan Steel Works Ltd:The レーザ光照射装置
JP2001144027A (ja) * 1999-08-13 2001-05-25 Semiconductor Energy Lab Co Ltd レーザー装置及びレーザーアニール方法並びに半導体装置の作製方法
JP2001250777A (ja) * 1999-12-28 2001-09-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2001326178A (ja) * 2000-03-08 2001-11-22 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2002231655A (ja) * 2001-01-30 2002-08-16 Ishikawajima Harima Heavy Ind Co Ltd レーザアニール装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005101548A (ja) * 2003-08-15 2005-04-14 Semiconductor Energy Lab Co Ltd レーザ照射方法及びそれを用いた半導体装置の作製方法、並びに半導体装置
JP2005311334A (ja) * 2004-03-26 2005-11-04 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2012074727A (ja) * 2004-03-26 2012-04-12 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法及びレーザ照射装置
US9296068B2 (en) 2004-03-26 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method and laser irradiation apparatus
JP2006261180A (ja) * 2005-03-15 2006-09-28 Hitachi Cable Ltd 薄膜半導体装置の製造方法
JP2007235118A (ja) * 2006-02-02 2007-09-13 Semiconductor Energy Lab Co Ltd 半導体膜の結晶化方法、半導体装置の製造方法、及びレーザ照射装置
JP2016018816A (ja) * 2014-07-04 2016-02-01 富士電機株式会社 不純物導入方法、不純物導入装置及び半導体素子の製造方法

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