JP2003209228A - 磁気記憶装置及びその製造方法 - Google Patents

磁気記憶装置及びその製造方法

Info

Publication number
JP2003209228A
JP2003209228A JP2002321358A JP2002321358A JP2003209228A JP 2003209228 A JP2003209228 A JP 2003209228A JP 2002321358 A JP2002321358 A JP 2002321358A JP 2002321358 A JP2002321358 A JP 2002321358A JP 2003209228 A JP2003209228 A JP 2003209228A
Authority
JP
Japan
Prior art keywords
layer
semiconductor layer
magnetic
memory device
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002321358A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003209228A5 (enExample
Inventor
Yoshiaki Asao
吉昭 浅尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2002321358A priority Critical patent/JP2003209228A/ja
Publication of JP2003209228A publication Critical patent/JP2003209228A/ja
Publication of JP2003209228A5 publication Critical patent/JP2003209228A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
JP2002321358A 2001-11-07 2002-11-05 磁気記憶装置及びその製造方法 Pending JP2003209228A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002321358A JP2003209228A (ja) 2001-11-07 2002-11-05 磁気記憶装置及びその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001342289 2001-11-07
JP2001-342289 2001-11-07
JP2002321358A JP2003209228A (ja) 2001-11-07 2002-11-05 磁気記憶装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2003209228A true JP2003209228A (ja) 2003-07-25
JP2003209228A5 JP2003209228A5 (enExample) 2006-04-06

Family

ID=27666972

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002321358A Pending JP2003209228A (ja) 2001-11-07 2002-11-05 磁気記憶装置及びその製造方法

Country Status (1)

Country Link
JP (1) JP2003209228A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005251382A (ja) * 2004-03-05 2005-09-15 Commissariat A L'energie Atomique 高い電流密度を有する磁気抵抗ランダム・アクセス・メモリ
JP2006245208A (ja) * 2005-03-02 2006-09-14 Alps Electric Co Ltd 磁気検出素子及びその製造方法
JP2008544490A (ja) * 2005-06-08 2008-12-04 マイクロン テクノロジー， インク． バルクシリコン上のキャパシタレスｄｒａｍ
JP2009527869A (ja) * 2006-02-24 2009-07-30 グランディス インコーポレイテッド 大電流および大電流対称性を有する電流駆動メモリセル
US7804667B2 (en) 2006-05-25 2010-09-28 Tdk Corporation Magnetoresistive element with a Heusler alloy layer that has a region in which an additive element changes in concentration
RU2463676C2 (ru) * 2008-02-01 2012-10-10 Квэлкомм Инкорпорейтед Ячейка магнитного туннельного перехода, содержащая множество магнитных доменов

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005251382A (ja) * 2004-03-05 2005-09-15 Commissariat A L'energie Atomique 高い電流密度を有する磁気抵抗ランダム・アクセス・メモリ
JP2006245208A (ja) * 2005-03-02 2006-09-14 Alps Electric Co Ltd 磁気検出素子及びその製造方法
JP2008544490A (ja) * 2005-06-08 2008-12-04 マイクロン テクノロジー， インク． バルクシリコン上のキャパシタレスｄｒａｍ
US8158471B2 (en) 2005-06-08 2012-04-17 Micron Technology, Inc. Capacitorless DRAM on bulk silicon
US8466517B2 (en) 2005-06-08 2013-06-18 Micron Technology, Inc. Capacitorless DRAM on bulk silicon
US8971086B2 (en) 2005-06-08 2015-03-03 Micron Technology, Inc. Capacitorless DRAM on bulk silicon
JP2009527869A (ja) * 2006-02-24 2009-07-30 グランディス インコーポレイテッド 大電流および大電流対称性を有する電流駆動メモリセル
US7804667B2 (en) 2006-05-25 2010-09-28 Tdk Corporation Magnetoresistive element with a Heusler alloy layer that has a region in which an additive element changes in concentration
RU2463676C2 (ru) * 2008-02-01 2012-10-10 Квэлкомм Инкорпорейтед Ячейка магнитного туннельного перехода, содержащая множество магнитных доменов

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