JP2003209228A5 - - Google Patents
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- Publication number
- JP2003209228A5 JP2003209228A5 JP2002321358A JP2002321358A JP2003209228A5 JP 2003209228 A5 JP2003209228 A5 JP 2003209228A5 JP 2002321358 A JP2002321358 A JP 2002321358A JP 2002321358 A JP2002321358 A JP 2002321358A JP 2003209228 A5 JP2003209228 A5 JP 2003209228A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002321358A JP2003209228A (ja) | 2001-11-07 | 2002-11-05 | 磁気記憶装置及びその製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001342289 | 2001-11-07 | ||
| JP2001-342289 | 2001-11-07 | ||
| JP2002321358A JP2003209228A (ja) | 2001-11-07 | 2002-11-05 | 磁気記憶装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003209228A JP2003209228A (ja) | 2003-07-25 |
| JP2003209228A5 true JP2003209228A5 (enExample) | 2006-04-06 |
Family
ID=27666972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002321358A Pending JP2003209228A (ja) | 2001-11-07 | 2002-11-05 | 磁気記憶装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003209228A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2867300B1 (fr) * | 2004-03-05 | 2006-04-28 | Commissariat Energie Atomique | Memoire vive magnetoresistive a haute densite de courant |
| JP4951864B2 (ja) * | 2005-03-02 | 2012-06-13 | Ｔｄｋ株式会社 | 磁気検出素子 |
| US7538389B2 (en) * | 2005-06-08 | 2009-05-26 | Micron Technology, Inc. | Capacitorless DRAM on bulk silicon |
| US7515457B2 (en) * | 2006-02-24 | 2009-04-07 | Grandis, Inc. | Current driven memory cells having enhanced current and enhanced current symmetry |
| JP2007317824A (ja) | 2006-05-25 | 2007-12-06 | Tdk Corp | 磁気抵抗効果素子およびその製造方法、ならびに薄膜磁気ヘッド、ヘッドジンバルアセンブリ、ヘッドアームアセンブリおよび磁気ディスク装置 |
| US7936596B2 (en) * | 2008-02-01 | 2011-05-03 | Qualcomm Incorporated | Magnetic tunnel junction cell including multiple magnetic domains |
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2002
- 2002-11-05 JP JP2002321358A patent/JP2003209228A/ja active Pending