JP2003162898A5 - - Google Patents

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Publication number
JP2003162898A5
JP2003162898A5 JP2001360441A JP2001360441A JP2003162898A5 JP 2003162898 A5 JP2003162898 A5 JP 2003162898A5 JP 2001360441 A JP2001360441 A JP 2001360441A JP 2001360441 A JP2001360441 A JP 2001360441A JP 2003162898 A5 JP2003162898 A5 JP 2003162898A5
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JP
Japan
Prior art keywords
data
spare
memory cells
address
data input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001360441A
Other languages
English (en)
Japanese (ja)
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JP2003162898A (ja
JP4229607B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2001360441A external-priority patent/JP4229607B2/ja
Priority to JP2001360441A priority Critical patent/JP4229607B2/ja
Priority to US10/153,737 priority patent/US6865103B2/en
Priority to TW091113281A priority patent/TWI224334B/zh
Priority to KR10-2002-0044131A priority patent/KR100489573B1/ko
Priority to DE10239600A priority patent/DE10239600A1/de
Priority to CNB021422907A priority patent/CN1255815C/zh
Publication of JP2003162898A publication Critical patent/JP2003162898A/ja
Publication of JP2003162898A5 publication Critical patent/JP2003162898A5/ja
Publication of JP4229607B2 publication Critical patent/JP4229607B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001360441A 2001-11-27 2001-11-27 薄膜磁性体記憶装置 Expired - Fee Related JP4229607B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2001360441A JP4229607B2 (ja) 2001-11-27 2001-11-27 薄膜磁性体記憶装置
US10/153,737 US6865103B2 (en) 2001-11-27 2002-05-24 Thin film magnetic memory device having a redundant structure
TW091113281A TWI224334B (en) 2001-11-27 2002-06-18 Thin film magnetic memory device
KR10-2002-0044131A KR100489573B1 (ko) 2001-11-27 2002-07-26 용장 구성을 갖는 박막 자성체 기억 장치
DE10239600A DE10239600A1 (de) 2001-11-27 2002-08-28 Magnetische Dünnfilmspeichervorrichtung mit redundantem Aufbau
CNB021422907A CN1255815C (zh) 2001-11-27 2002-08-29 具有冗余结构的薄膜磁性体存储装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001360441A JP4229607B2 (ja) 2001-11-27 2001-11-27 薄膜磁性体記憶装置

Publications (3)

Publication Number Publication Date
JP2003162898A JP2003162898A (ja) 2003-06-06
JP2003162898A5 true JP2003162898A5 (https=) 2005-07-14
JP4229607B2 JP4229607B2 (ja) 2009-02-25

Family

ID=19171247

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001360441A Expired - Fee Related JP4229607B2 (ja) 2001-11-27 2001-11-27 薄膜磁性体記憶装置

Country Status (6)

Country Link
US (1) US6865103B2 (https=)
JP (1) JP4229607B2 (https=)
KR (1) KR100489573B1 (https=)
CN (1) CN1255815C (https=)
DE (1) DE10239600A1 (https=)
TW (1) TWI224334B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004013961A (ja) * 2002-06-04 2004-01-15 Mitsubishi Electric Corp 薄膜磁性体記憶装置
JP3808802B2 (ja) * 2002-06-20 2006-08-16 株式会社東芝 磁気ランダムアクセスメモリ
JP2004079138A (ja) * 2002-08-22 2004-03-11 Renesas Technology Corp 不揮発性半導体記憶装置
KR100955264B1 (ko) * 2003-12-29 2010-04-30 주식회사 하이닉스반도체 효율적으로 에러셀을 리페어 할 수 있는 반도체 메모리 장치
US7123506B2 (en) * 2004-02-13 2006-10-17 Applied Spintronics Technology, Inc. Method and system for performing more consistent switching of magnetic elements in a magnetic memory
JPWO2005081260A1 (ja) * 2004-02-20 2008-01-17 スパンション エルエルシー 半導体記憶装置および半導体記憶装置の冗長方法
JPWO2005081261A1 (ja) * 2004-02-20 2007-08-02 スパンション エルエルシー 半導体記憶装置および半導体記憶装置の冗長制御方法
JP2005276276A (ja) * 2004-03-23 2005-10-06 Toshiba Corp 半導体集積回路装置
KR101069725B1 (ko) * 2009-12-24 2011-10-04 주식회사 하이닉스반도체 반도체 메모리 장치와 이를 위한 고장번지 제어 회로 및 방법
JP6360610B1 (ja) * 2017-11-22 2018-07-18 力晶科技股▲ふん▼有限公司 Ｓｒａｍ装置のための冗長回路、ｓｒａｍ装置、及び半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6317376B1 (en) * 2000-06-20 2001-11-13 Hewlett-Packard Company Reference signal generation for magnetic random access memory devices
DE10032274A1 (de) * 2000-07-03 2002-01-24 Infineon Technologies Ag Integrierte Speicher mit Speicherzellen mit magnetoresistivem Speichereffekt

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