TWI224334B - Thin film magnetic memory device - Google Patents
Thin film magnetic memory device Download PDFInfo
- Publication number
- TWI224334B TWI224334B TW091113281A TW91113281A TWI224334B TW I224334 B TWI224334 B TW I224334B TW 091113281 A TW091113281 A TW 091113281A TW 91113281 A TW91113281 A TW 91113281A TW I224334 B TWI224334 B TW I224334B
- Authority
- TW
- Taiwan
- Prior art keywords
- data
- memory
- mentioned
- line
- spare
- Prior art date
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 115
- 239000010409 thin film Substances 0.000 title claims description 32
- 230000015654 memory Effects 0.000 claims abstract description 368
- 230000005415 magnetization Effects 0.000 claims description 116
- 230000004044 response Effects 0.000 claims description 49
- 230000002950 deficient Effects 0.000 claims description 33
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- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical group CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims 1
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- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 18
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- GIUYCYHIANZCFB-FJFJXFQQSA-N fludarabine phosphate Chemical compound C1=NC=2C(N)=NC(F)=NC=2N1[C@@H]1O[C@H](COP(O)(O)=O)[C@@H](O)[C@@H]1O GIUYCYHIANZCFB-FJFJXFQQSA-N 0.000 description 2
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- HPHBOJANXDKUQD-UHFFFAOYSA-N 2-cyanoacetohydrazide Chemical compound NNC(=O)CC#N HPHBOJANXDKUQD-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
- G11C29/846—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by choosing redundant lines at an output stage
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001360441A JP4229607B2 (ja) | 2001-11-27 | 2001-11-27 | 薄膜磁性体記憶装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWI224334B true TWI224334B (en) | 2004-11-21 |
Family
ID=19171247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091113281A TWI224334B (en) | 2001-11-27 | 2002-06-18 | Thin film magnetic memory device |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6865103B2 (https=) |
| JP (1) | JP4229607B2 (https=) |
| KR (1) | KR100489573B1 (https=) |
| CN (1) | CN1255815C (https=) |
| DE (1) | DE10239600A1 (https=) |
| TW (1) | TWI224334B (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004013961A (ja) * | 2002-06-04 | 2004-01-15 | Mitsubishi Electric Corp | 薄膜磁性体記憶装置 |
| JP3808802B2 (ja) * | 2002-06-20 | 2006-08-16 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
| JP2004079138A (ja) * | 2002-08-22 | 2004-03-11 | Renesas Technology Corp | 不揮発性半導体記憶装置 |
| KR100955264B1 (ko) * | 2003-12-29 | 2010-04-30 | 주식회사 하이닉스반도체 | 효율적으로 에러셀을 리페어 할 수 있는 반도체 메모리 장치 |
| US7123506B2 (en) * | 2004-02-13 | 2006-10-17 | Applied Spintronics Technology, Inc. | Method and system for performing more consistent switching of magnetic elements in a magnetic memory |
| JPWO2005081260A1 (ja) * | 2004-02-20 | 2008-01-17 | スパンション エルエルシー | 半導体記憶装置および半導体記憶装置の冗長方法 |
| JPWO2005081261A1 (ja) * | 2004-02-20 | 2007-08-02 | スパンション エルエルシー | 半導体記憶装置および半導体記憶装置の冗長制御方法 |
| JP2005276276A (ja) * | 2004-03-23 | 2005-10-06 | Toshiba Corp | 半導体集積回路装置 |
| KR101069725B1 (ko) * | 2009-12-24 | 2011-10-04 | 주식회사 하이닉스반도체 | 반도체 메모리 장치와 이를 위한 고장번지 제어 회로 및 방법 |
| JP6360610B1 (ja) * | 2017-11-22 | 2018-07-18 | 力晶科技股▲ふん▼有限公司 | Ｓｒａｍ装置のための冗長回路、ｓｒａｍ装置、及び半導体装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6317376B1 (en) * | 2000-06-20 | 2001-11-13 | Hewlett-Packard Company | Reference signal generation for magnetic random access memory devices |
| DE10032274A1 (de) * | 2000-07-03 | 2002-01-24 | Infineon Technologies Ag | Integrierte Speicher mit Speicherzellen mit magnetoresistivem Speichereffekt |
-
2001
- 2001-11-27 JP JP2001360441A patent/JP4229607B2/ja not_active Expired - Fee Related
-
2002
- 2002-05-24 US US10/153,737 patent/US6865103B2/en not_active Expired - Fee Related
- 2002-06-18 TW TW091113281A patent/TWI224334B/zh not_active IP Right Cessation
- 2002-07-26 KR KR10-2002-0044131A patent/KR100489573B1/ko not_active Expired - Fee Related
- 2002-08-28 DE DE10239600A patent/DE10239600A1/de not_active Ceased
- 2002-08-29 CN CNB021422907A patent/CN1255815C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US6865103B2 (en) | 2005-03-08 |
| JP2003162898A (ja) | 2003-06-06 |
| CN1255815C (zh) | 2006-05-10 |
| US20030099130A1 (en) | 2003-05-29 |
| KR20030043596A (ko) | 2003-06-02 |
| JP4229607B2 (ja) | 2009-02-25 |
| KR100489573B1 (ko) | 2005-05-16 |
| CN1421864A (zh) | 2003-06-04 |
| DE10239600A1 (de) | 2003-06-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |