JP4229607B2 - 薄膜磁性体記憶装置 - Google Patents

薄膜磁性体記憶装置 Download PDF

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Publication number
JP4229607B2
JP4229607B2 JP2001360441A JP2001360441A JP4229607B2 JP 4229607 B2 JP4229607 B2 JP 4229607B2 JP 2001360441 A JP2001360441 A JP 2001360441A JP 2001360441 A JP2001360441 A JP 2001360441A JP 4229607 B2 JP4229607 B2 JP 4229607B2
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JP
Japan
Prior art keywords
data
spare
write
data input
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001360441A
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English (en)
Japanese (ja)
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JP2003162898A (ja
JP2003162898A5 (https=
Inventor
秀人 日高
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2001360441A priority Critical patent/JP4229607B2/ja
Priority to US10/153,737 priority patent/US6865103B2/en
Priority to TW091113281A priority patent/TWI224334B/zh
Priority to KR10-2002-0044131A priority patent/KR100489573B1/ko
Priority to DE10239600A priority patent/DE10239600A1/de
Priority to CNB021422907A priority patent/CN1255815C/zh
Publication of JP2003162898A publication Critical patent/JP2003162898A/ja
Publication of JP2003162898A5 publication Critical patent/JP2003162898A5/ja
Application granted granted Critical
Publication of JP4229607B2 publication Critical patent/JP4229607B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/846—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by choosing redundant lines at an output stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
JP2001360441A 2001-11-27 2001-11-27 薄膜磁性体記憶装置 Expired - Fee Related JP4229607B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2001360441A JP4229607B2 (ja) 2001-11-27 2001-11-27 薄膜磁性体記憶装置
US10/153,737 US6865103B2 (en) 2001-11-27 2002-05-24 Thin film magnetic memory device having a redundant structure
TW091113281A TWI224334B (en) 2001-11-27 2002-06-18 Thin film magnetic memory device
KR10-2002-0044131A KR100489573B1 (ko) 2001-11-27 2002-07-26 용장 구성을 갖는 박막 자성체 기억 장치
DE10239600A DE10239600A1 (de) 2001-11-27 2002-08-28 Magnetische Dünnfilmspeichervorrichtung mit redundantem Aufbau
CNB021422907A CN1255815C (zh) 2001-11-27 2002-08-29 具有冗余结构的薄膜磁性体存储装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001360441A JP4229607B2 (ja) 2001-11-27 2001-11-27 薄膜磁性体記憶装置

Publications (3)

Publication Number Publication Date
JP2003162898A JP2003162898A (ja) 2003-06-06
JP2003162898A5 JP2003162898A5 (https=) 2005-07-14
JP4229607B2 true JP4229607B2 (ja) 2009-02-25

Family

ID=19171247

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001360441A Expired - Fee Related JP4229607B2 (ja) 2001-11-27 2001-11-27 薄膜磁性体記憶装置

Country Status (6)

Country Link
US (1) US6865103B2 (https=)
JP (1) JP4229607B2 (https=)
KR (1) KR100489573B1 (https=)
CN (1) CN1255815C (https=)
DE (1) DE10239600A1 (https=)
TW (1) TWI224334B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004013961A (ja) * 2002-06-04 2004-01-15 Mitsubishi Electric Corp 薄膜磁性体記憶装置
JP3808802B2 (ja) * 2002-06-20 2006-08-16 株式会社東芝 磁気ランダムアクセスメモリ
JP2004079138A (ja) * 2002-08-22 2004-03-11 Renesas Technology Corp 不揮発性半導体記憶装置
KR100955264B1 (ko) * 2003-12-29 2010-04-30 주식회사 하이닉스반도체 효율적으로 에러셀을 리페어 할 수 있는 반도체 메모리 장치
US7123506B2 (en) * 2004-02-13 2006-10-17 Applied Spintronics Technology, Inc. Method and system for performing more consistent switching of magnetic elements in a magnetic memory
JPWO2005081260A1 (ja) * 2004-02-20 2008-01-17 スパンション エルエルシー 半導体記憶装置および半導体記憶装置の冗長方法
JPWO2005081261A1 (ja) * 2004-02-20 2007-08-02 スパンション エルエルシー 半導体記憶装置および半導体記憶装置の冗長制御方法
JP2005276276A (ja) * 2004-03-23 2005-10-06 Toshiba Corp 半導体集積回路装置
KR101069725B1 (ko) * 2009-12-24 2011-10-04 주식회사 하이닉스반도체 반도체 메모리 장치와 이를 위한 고장번지 제어 회로 및 방법
JP6360610B1 (ja) * 2017-11-22 2018-07-18 力晶科技股▲ふん▼有限公司 Ｓｒａｍ装置のための冗長回路、ｓｒａｍ装置、及び半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6317376B1 (en) * 2000-06-20 2001-11-13 Hewlett-Packard Company Reference signal generation for magnetic random access memory devices
DE10032274A1 (de) * 2000-07-03 2002-01-24 Infineon Technologies Ag Integrierte Speicher mit Speicherzellen mit magnetoresistivem Speichereffekt

Also Published As

Publication number Publication date
US6865103B2 (en) 2005-03-08
JP2003162898A (ja) 2003-06-06
CN1255815C (zh) 2006-05-10
US20030099130A1 (en) 2003-05-29
KR20030043596A (ko) 2003-06-02
TWI224334B (en) 2004-11-21
KR100489573B1 (ko) 2005-05-16
CN1421864A (zh) 2003-06-04
DE10239600A1 (de) 2003-06-12

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