KR100489573B1 - 용장 구성을 갖는 박막 자성체 기억 장치 - Google Patents

용장 구성을 갖는 박막 자성체 기억 장치 Download PDF

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Publication number
KR100489573B1
KR100489573B1 KR10-2002-0044131A KR20020044131A KR100489573B1 KR 100489573 B1 KR100489573 B1 KR 100489573B1 KR 20020044131 A KR20020044131 A KR 20020044131A KR 100489573 B1 KR100489573 B1 KR 100489573B1
Authority
KR
South Korea
Prior art keywords
data
spare
memory cells
memory cell
address
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2002-0044131A
Other languages
English (en)
Korean (ko)
Other versions
KR20030043596A (ko
Inventor
히다까히데또
Original Assignee
미쓰비시덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시덴키 가부시키가이샤 filed Critical 미쓰비시덴키 가부시키가이샤
Publication of KR20030043596A publication Critical patent/KR20030043596A/ko
Application granted granted Critical
Publication of KR100489573B1 publication Critical patent/KR100489573B1/ko
Assigned to 르네사스 일렉트로닉스 가부시키가이샤 reassignment 르네사스 일렉트로닉스 가부시키가이샤 권리의 전부이전등록 Assignors: 미쓰비시덴키 가부시키가이샤
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/846—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by choosing redundant lines at an output stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
KR10-2002-0044131A 2001-11-27 2002-07-26 용장 구성을 갖는 박막 자성체 기억 장치 Expired - Fee Related KR100489573B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00360441 2001-11-27
JP2001360441A JP4229607B2 (ja) 2001-11-27 2001-11-27 薄膜磁性体記憶装置

Publications (2)

Publication Number Publication Date
KR20030043596A KR20030043596A (ko) 2003-06-02
KR100489573B1 true KR100489573B1 (ko) 2005-05-16

Family

ID=19171247

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2002-0044131A Expired - Fee Related KR100489573B1 (ko) 2001-11-27 2002-07-26 용장 구성을 갖는 박막 자성체 기억 장치

Country Status (6)

Country Link
US (1) US6865103B2 (https=)
JP (1) JP4229607B2 (https=)
KR (1) KR100489573B1 (https=)
CN (1) CN1255815C (https=)
DE (1) DE10239600A1 (https=)
TW (1) TWI224334B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004013961A (ja) * 2002-06-04 2004-01-15 Mitsubishi Electric Corp 薄膜磁性体記憶装置
JP3808802B2 (ja) * 2002-06-20 2006-08-16 株式会社東芝 磁気ランダムアクセスメモリ
JP2004079138A (ja) * 2002-08-22 2004-03-11 Renesas Technology Corp 不揮発性半導体記憶装置
KR100955264B1 (ko) * 2003-12-29 2010-04-30 주식회사 하이닉스반도체 효율적으로 에러셀을 리페어 할 수 있는 반도체 메모리 장치
US7123506B2 (en) * 2004-02-13 2006-10-17 Applied Spintronics Technology, Inc. Method and system for performing more consistent switching of magnetic elements in a magnetic memory
JPWO2005081260A1 (ja) * 2004-02-20 2008-01-17 スパンション エルエルシー 半導体記憶装置および半導体記憶装置の冗長方法
JPWO2005081261A1 (ja) * 2004-02-20 2007-08-02 スパンション エルエルシー 半導体記憶装置および半導体記憶装置の冗長制御方法
JP2005276276A (ja) * 2004-03-23 2005-10-06 Toshiba Corp 半導体集積回路装置
KR101069725B1 (ko) * 2009-12-24 2011-10-04 주식회사 하이닉스반도체 반도체 메모리 장치와 이를 위한 고장번지 제어 회로 및 방법
JP6360610B1 (ja) * 2017-11-22 2018-07-18 力晶科技股▲ふん▼有限公司 Ｓｒａｍ装置のための冗長回路、ｓｒａｍ装置、及び半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6317376B1 (en) * 2000-06-20 2001-11-13 Hewlett-Packard Company Reference signal generation for magnetic random access memory devices
DE10032274A1 (de) * 2000-07-03 2002-01-24 Infineon Technologies Ag Integrierte Speicher mit Speicherzellen mit magnetoresistivem Speichereffekt

Also Published As

Publication number Publication date
US6865103B2 (en) 2005-03-08
JP2003162898A (ja) 2003-06-06
CN1255815C (zh) 2006-05-10
US20030099130A1 (en) 2003-05-29
KR20030043596A (ko) 2003-06-02
TWI224334B (en) 2004-11-21
JP4229607B2 (ja) 2009-02-25
CN1421864A (zh) 2003-06-04
DE10239600A1 (de) 2003-06-12

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