JP2003158295A - ＧａＮ系半導体薄膜、その製造方法、半導体発光素子 - Google Patents
ＧａＮ系半導体薄膜、その製造方法、半導体発光素子Info
- Publication number
- JP2003158295A JP2003158295A JP2001356801A JP2001356801A JP2003158295A JP 2003158295 A JP2003158295 A JP 2003158295A JP 2001356801 A JP2001356801 A JP 2001356801A JP 2001356801 A JP2001356801 A JP 2001356801A JP 2003158295 A JP2003158295 A JP 2003158295A
- Authority
- JP
- Japan
- Prior art keywords
- gan
- based semiconductor
- thin film
- semiconductor thin
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 302
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000010409 thin film Substances 0.000 claims description 92
- 239000000758 substrate Substances 0.000 claims description 32
- 239000000203 mixture Substances 0.000 claims description 16
- 229910052594 sapphire Inorganic materials 0.000 claims description 9
- 239000010980 sapphire Substances 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 229910003465 moissanite Inorganic materials 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims 2
- 239000013078 crystal Substances 0.000 abstract description 54
- 230000001788 irregular Effects 0.000 abstract 1
- 238000004020 luminiscence type Methods 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 102100032566 Carbonic anhydrase-related protein 10 Human genes 0.000 description 1
- 101710112287 DNA-directed RNA polymerases I and III subunit RPAC2 Proteins 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 101000867836 Homo sapiens Carbonic anhydrase-related protein 10 Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 101710183183 Probable DNA-directed RNA polymerases I and III subunit RPAC2 Proteins 0.000 description 1
- 102100034616 Protein POLR1D, isoform 2 Human genes 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001356801A JP2003158295A (ja) | 2001-11-22 | 2001-11-22 | ＧａＮ系半導体薄膜、その製造方法、半導体発光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001356801A JP2003158295A (ja) | 2001-11-22 | 2001-11-22 | ＧａＮ系半導体薄膜、その製造方法、半導体発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003158295A true JP2003158295A (ja) | 2003-05-30 |
| JP2003158295A5 JP2003158295A5 (https=) | 2005-07-07 |
Family
ID=19168255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001356801A Pending JP2003158295A (ja) | 2001-11-22 | 2001-11-22 | ＧａＮ系半導体薄膜、その製造方法、半導体発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003158295A (https=) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006080708A1 (en) * | 2004-10-06 | 2006-08-03 | Epivalley Co., Ltd. | Iii-nitride semiconductor light emitting device and method for manufacturing the same |
| JPWO2005043633A1 (ja) * | 2003-11-04 | 2007-05-10 | パイオニア株式会社 | 半導体発光素子及びその製造方法 |
| US7704860B2 (en) | 2004-11-22 | 2010-04-27 | Panasonic Corporation | Nitride-based semiconductor device and method for fabricating the same |
| WO2020213388A1 (ja) * | 2019-04-19 | 2020-10-22 | ソニー株式会社 | 化合物半導体層積層体及びその形成方法、並びに、発光デバイス |
-
2001
- 2001-11-22 JP JP2001356801A patent/JP2003158295A/ja active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2005043633A1 (ja) * | 2003-11-04 | 2007-05-10 | パイオニア株式会社 | 半導体発光素子及びその製造方法 |
| EP1681727A4 (en) * | 2003-11-04 | 2009-12-16 | Pioneer Corp | SEMICONDUCTOR LIGHT EMISSION ELEMENT AND METHOD FOR THE PRODUCTION THEREOF |
| JP4588638B2 (ja) * | 2003-11-04 | 2010-12-01 | パイオニア株式会社 | 半導体発光素子及びその製造方法 |
| WO2006080708A1 (en) * | 2004-10-06 | 2006-08-03 | Epivalley Co., Ltd. | Iii-nitride semiconductor light emitting device and method for manufacturing the same |
| US7704860B2 (en) | 2004-11-22 | 2010-04-27 | Panasonic Corporation | Nitride-based semiconductor device and method for fabricating the same |
| WO2020213388A1 (ja) * | 2019-04-19 | 2020-10-22 | ソニー株式会社 | 化合物半導体層積層体及びその形成方法、並びに、発光デバイス |
| JPWO2020213388A1 (https=) * | 2019-04-19 | 2020-10-22 | ||
| EP3958333A4 (en) * | 2019-04-19 | 2022-06-08 | Sony Group Corporation | COMPOUND SEMICONDUCTOR LAYER LAMINATE AND METHOD FOR PRODUCTION THEREOF, AND LIGHT-EMITTING DEVICE |
| US20220190555A1 (en) * | 2019-04-19 | 2022-06-16 | Sony Group Corporation | Compound semiconductor layer stack, method of forming the same, and light-emitting device |
| JP7548219B2 (ja) | 2019-04-19 | 2024-09-10 | ソニーグループ株式会社 | 化合物半導体層積層体及びその形成方法、並びに、発光デバイス |
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