JP2003158295A5 - - Google Patents

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Publication number
JP2003158295A5
JP2003158295A5 JP2001356801A JP2001356801A JP2003158295A5 JP 2003158295 A5 JP2003158295 A5 JP 2003158295A5 JP 2001356801 A JP2001356801 A JP 2001356801A JP 2001356801 A JP2001356801 A JP 2001356801A JP 2003158295 A5 JP2003158295 A5 JP 2003158295A5
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JP
Japan
Prior art keywords
gan
based semiconductor
thin film
semiconductor thin
film according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001356801A
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English (en)
Japanese (ja)
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JP2003158295A (ja
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Publication date
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Priority to JP2001356801A priority Critical patent/JP2003158295A/ja
Priority claimed from JP2001356801A external-priority patent/JP2003158295A/ja
Publication of JP2003158295A publication Critical patent/JP2003158295A/ja
Publication of JP2003158295A5 publication Critical patent/JP2003158295A5/ja
Pending legal-status Critical Current

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JP2001356801A 2001-11-22 2001-11-22 ＧａＮ系半導体薄膜、その製造方法、半導体発光素子 Pending JP2003158295A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001356801A JP2003158295A (ja) 2001-11-22 2001-11-22 ＧａＮ系半導体薄膜、その製造方法、半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001356801A JP2003158295A (ja) 2001-11-22 2001-11-22 ＧａＮ系半導体薄膜、その製造方法、半導体発光素子

Publications (2)

Publication Number Publication Date
JP2003158295A JP2003158295A (ja) 2003-05-30
JP2003158295A5 true JP2003158295A5 (https=) 2005-07-07

Family

ID=19168255

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001356801A Pending JP2003158295A (ja) 2001-11-22 2001-11-22 ＧａＮ系半導体薄膜、その製造方法、半導体発光素子

Country Status (1)

Country Link
JP (1) JP2003158295A (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1681727A4 (en) * 2003-11-04 2009-12-16 Pioneer Corp SEMICONDUCTOR LIGHT EMISSION ELEMENT AND METHOD FOR THE PRODUCTION THEREOF
KR100601138B1 (ko) * 2004-10-06 2006-07-19 에피밸리 주식회사 Ⅲ-질화물 반도체 발광소자 및 그 제조 방법
JP4880456B2 (ja) 2004-11-22 2012-02-22 パナソニック株式会社 窒素化合物系半導体装置およびその製造方法
US20220190555A1 (en) * 2019-04-19 2022-06-16 Sony Group Corporation Compound semiconductor layer stack, method of forming the same, and light-emitting device

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