JP2003151992A5 - - Google Patents
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- Publication number
- JP2003151992A5 JP2003151992A5 JP2002244801A JP2002244801A JP2003151992A5 JP 2003151992 A5 JP2003151992 A5 JP 2003151992A5 JP 2002244801 A JP2002244801 A JP 2002244801A JP 2002244801 A JP2002244801 A JP 2002244801A JP 2003151992 A5 JP2003151992 A5 JP 2003151992A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- channel
- tft
- film
- drain region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 148
- 239000012535 impurity Substances 0.000 claims 71
- 239000010410 layer Substances 0.000 claims 59
- 239000007789 gas Substances 0.000 claims 25
- 238000010438 heat treatment Methods 0.000 claims 25
- 239000003054 catalyst Substances 0.000 claims 24
- 238000000034 method Methods 0.000 claims 21
- 238000004519 manufacturing process Methods 0.000 claims 17
- 239000000758 substrate Substances 0.000 claims 17
- 230000015572 biosynthetic process Effects 0.000 claims 16
- 230000003197 catalytic effect Effects 0.000 claims 14
- 230000004913 activation Effects 0.000 claims 10
- 238000005247 gettering Methods 0.000 claims 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 5
- 239000011261 inert gas Substances 0.000 claims 5
- 229910052710 silicon Inorganic materials 0.000 claims 5
- 239000010703 silicon Substances 0.000 claims 5
- 239000006104 solid solution Substances 0.000 claims 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 4
- 239000010949 copper Substances 0.000 claims 4
- 239000010931 gold Substances 0.000 claims 4
- 230000000737 periodic effect Effects 0.000 claims 4
- 239000012528 membrane Substances 0.000 claims 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 2
- 229910017052 cobalt Inorganic materials 0.000 claims 2
- 239000010941 cobalt Substances 0.000 claims 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 239000001307 helium Substances 0.000 claims 2
- 229910052734 helium Inorganic materials 0.000 claims 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 2
- 229910052741 iridium Inorganic materials 0.000 claims 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 2
- 229910052743 krypton Inorganic materials 0.000 claims 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 2
- 239000007788 liquid Substances 0.000 claims 2
- 229910052754 neon Inorganic materials 0.000 claims 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052762 osmium Inorganic materials 0.000 claims 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 230000001681 protective effect Effects 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- 239000000243 solution Substances 0.000 claims 2
- 229910052724 xenon Inorganic materials 0.000 claims 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 2
- 239000007864 aqueous solution Substances 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 239000011229 interlayer Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002244801A JP4137555B2 (ja) | 2001-08-27 | 2002-08-26 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-255893 | 2001-08-27 | ||
| JP2001255893 | 2001-08-27 | ||
| JP2002244801A JP4137555B2 (ja) | 2001-08-27 | 2002-08-26 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003151992A JP2003151992A (ja) | 2003-05-23 |
| JP2003151992A5 true JP2003151992A5 (enrdf_load_stackoverflow) | 2005-10-27 |
| JP4137555B2 JP4137555B2 (ja) | 2008-08-20 |
Family
ID=26621012
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002244801A Expired - Fee Related JP4137555B2 (ja) | 2001-08-27 | 2002-08-26 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4137555B2 (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0512819A (ja) * | 1991-07-05 | 1993-01-22 | Teac Corp | 信号記録装置 |
| JP4624047B2 (ja) * | 2004-09-21 | 2011-02-02 | シャープ株式会社 | ファラデーカップ装置およびイオンドーピング装置ならびに半導体装置の製造方法 |
-
2002
- 2002-08-26 JP JP2002244801A patent/JP4137555B2/ja not_active Expired - Fee Related
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