JP2003151905A5 - - Google Patents

Info

Publication number

JP2003151905A5

JP2003151905A5 JP2001351808A JP2001351808A JP2003151905A5 JP 2003151905 A5 JP2003151905 A5 JP 2003151905A5 JP 2001351808 A JP2001351808 A JP 2001351808A JP 2001351808 A JP2001351808 A JP 2001351808A JP 2003151905 A5 JP2003151905 A5 JP 2003151905A5

Authority

JP

Japan

Prior art keywords

semiconductor film

film

forming

manufacturing

insulating film

Prior art date

2001-11-16

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Granted

Links

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• 239000004065 semiconductor Substances 0.000 claims 57
• 238000004519 manufacturing process Methods 0.000 claims 17
• 238000000034 method Methods 0.000 claims 17
• 230000003197 catalytic effect Effects 0.000 claims 12
• 230000004888 barrier function Effects 0.000 claims 10
• 238000010438 heat treatment Methods 0.000 claims 8
• 239000007789 gas Substances 0.000 claims 6
• 239000012212 insulator Substances 0.000 claims 4
• XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
• XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
• PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
• KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
• 239000007864 aqueous solution Substances 0.000 claims 2
• 239000003054 catalyst Substances 0.000 claims 2
• 239000012535 impurity Substances 0.000 claims 2
• 230000003647 oxidation Effects 0.000 claims 2
• 238000007254 oxidation reaction Methods 0.000 claims 2
• BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
• RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
• CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 1
• KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
• 229910052581 Si3N4 Inorganic materials 0.000 claims 1
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
• 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
• 229910052786 argon Inorganic materials 0.000 claims 1
• 229910017052 cobalt Inorganic materials 0.000 claims 1
• 239000010941 cobalt Substances 0.000 claims 1
• GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
• 229910052802 copper Inorganic materials 0.000 claims 1
• 239000010949 copper Substances 0.000 claims 1
• 238000005530 etching Methods 0.000 claims 1
• PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
• 229910052737 gold Inorganic materials 0.000 claims 1
• 239000010931 gold Substances 0.000 claims 1
• 229910052734 helium Inorganic materials 0.000 claims 1
• 239000001307 helium Substances 0.000 claims 1
• SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
• 229910052741 iridium Inorganic materials 0.000 claims 1
• GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 1
• 229910052742 iron Inorganic materials 0.000 claims 1
• 229910052743 krypton Inorganic materials 0.000 claims 1
• DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 1
• 229910052754 neon Inorganic materials 0.000 claims 1
• GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 1
• 229910052759 nickel Inorganic materials 0.000 claims 1
• 229910052762 osmium Inorganic materials 0.000 claims 1
• SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims 1
• 230000001590 oxidative effect Effects 0.000 claims 1
• 229910052763 palladium Inorganic materials 0.000 claims 1
• 238000009832 plasma treatment Methods 0.000 claims 1
• 229910052697 platinum Inorganic materials 0.000 claims 1
• 229910052703 rhodium Inorganic materials 0.000 claims 1
• 239000010948 rhodium Substances 0.000 claims 1
• MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 1
• 229910052707 ruthenium Inorganic materials 0.000 claims 1
• 229910052710 silicon Inorganic materials 0.000 claims 1
• 239000010703 silicon Substances 0.000 claims 1
• HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
• 239000000126 substance Substances 0.000 claims 1
• 239000000758 substrate Substances 0.000 claims 1
• XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
• 229910052724 xenon Inorganic materials 0.000 claims 1
• FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 1