JP2003109795A5 - - Google Patents
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- Publication number
- JP2003109795A5 JP2003109795A5 JP2001297850A JP2001297850A JP2003109795A5 JP 2003109795 A5 JP2003109795 A5 JP 2003109795A5 JP 2001297850 A JP2001297850 A JP 2001297850A JP 2001297850 A JP2001297850 A JP 2001297850A JP 2003109795 A5 JP2003109795 A5 JP 2003109795A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma jet
- jet generator
- discharge tube
- generator according
- antenna
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 230000005684 electric field Effects 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 230000001939 inductive effect Effects 0.000 claims 1
- 230000000977 initiatory effect Effects 0.000 claims 1
- 238000004381 surface treatment Methods 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001297850A JP3768854B2 (ja) | 2001-09-27 | 2001-09-27 | プラズマジェット発生装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001297850A JP3768854B2 (ja) | 2001-09-27 | 2001-09-27 | プラズマジェット発生装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003109795A JP2003109795A (ja) | 2003-04-11 |
| JP2003109795A5 true JP2003109795A5 (https=) | 2004-12-24 |
| JP3768854B2 JP3768854B2 (ja) | 2006-04-19 |
Family
ID=19118850
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001297850A Expired - Lifetime JP3768854B2 (ja) | 2001-09-27 | 2001-09-27 | プラズマジェット発生装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3768854B2 (https=) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4687543B2 (ja) * | 2006-04-14 | 2011-05-25 | パナソニック株式会社 | 大気圧プラズマ発生装置及び発生方法 |
| JP4946456B2 (ja) * | 2007-01-24 | 2012-06-06 | パナソニック株式会社 | 大気圧プラズマ発生方法及び装置 |
| JP5288810B2 (ja) * | 2008-01-16 | 2013-09-11 | 株式会社ジャパンディスプレイ | 局所プラズマ処理装置及び処理方法 |
| JP5300283B2 (ja) * | 2008-02-27 | 2013-09-25 | 学校法人トヨタ学園 | 窒化処理法 |
| JP2013532349A (ja) * | 2010-05-05 | 2013-08-15 | ペルキネルマー ヘルス サイエンシーズ， インコーポレイテッド | 耐酸化性誘導装置 |
| JP6153118B2 (ja) | 2013-08-30 | 2017-06-28 | 国立研究開発法人産業技術総合研究所 | マイクロ波プラズマ処理装置 |
| KR102173465B1 (ko) * | 2019-10-15 | 2020-11-03 | 주성엔지니어링(주) | 기판형 태양 전지의 도핑 장치 |
-
2001
- 2001-09-27 JP JP2001297850A patent/JP3768854B2/ja not_active Expired - Lifetime
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