WO2002015650A3 - Externally excited torroidal plasma source - Google Patents
Externally excited torroidal plasma source Download PDFInfo
- Publication number
- WO2002015650A3 WO2002015650A3 PCT/US2001/025505 US0125505W WO0215650A3 WO 2002015650 A3 WO2002015650 A3 WO 2002015650A3 US 0125505 W US0125505 W US 0125505W WO 0215650 A3 WO0215650 A3 WO 0215650A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- enclosure
- openings
- coupled
- plasma source
- torroidal path
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020037002020A KR100809889B1 (en) | 2000-08-11 | 2001-08-13 | Plasma chamber with externally excited torroidal plasma source |
EP01964028A EP1307896A2 (en) | 2000-08-11 | 2001-08-13 | Externally excited torroidal plasma source |
JP2002519385A JP5204941B2 (en) | 2000-08-11 | 2001-08-13 | Toroidal plasma chamber excited from outside |
Applications Claiming Priority (14)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/636,436 US6410449B1 (en) | 2000-08-11 | 2000-08-11 | Method of processing a workpiece using an externally excited torroidal plasma source |
US09/636,434 US6468388B1 (en) | 2000-08-11 | 2000-08-11 | Reactor chamber for an externally excited torroidal plasma source with a gas distribution plate |
US09/638,075 | 2000-08-11 | ||
US09/637,174 | 2000-08-11 | ||
US09/638,075 US7094316B1 (en) | 2000-08-11 | 2000-08-11 | Externally excited torroidal plasma source |
US09/636,699 US6348126B1 (en) | 2000-08-11 | 2000-08-11 | Externally excited torroidal plasma source |
US09/636,435 US6494986B1 (en) | 2000-08-11 | 2000-08-11 | Externally excited multiple torroidal plasma source |
US09/636,436 | 2000-08-11 | ||
US09/636,700 | 2000-08-11 | ||
US09/636,435 | 2000-08-11 | ||
US09/636,700 US6453842B1 (en) | 2000-08-11 | 2000-08-11 | Externally excited torroidal plasma source using a gas distribution plate |
US09/636,699 | 2000-08-11 | ||
US09/637,174 US6551446B1 (en) | 2000-08-11 | 2000-08-11 | Externally excited torroidal plasma source with a gas distribution plate |
US09/636,434 | 2000-08-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002015650A2 WO2002015650A2 (en) | 2002-02-21 |
WO2002015650A3 true WO2002015650A3 (en) | 2002-06-20 |
Family
ID=27569863
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/025505 WO2002015650A2 (en) | 2000-08-11 | 2001-08-13 | Externally excited torroidal plasma source |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1307896A2 (en) |
JP (1) | JP5204941B2 (en) |
KR (1) | KR100809889B1 (en) |
WO (1) | WO2002015650A2 (en) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7223676B2 (en) * | 2002-06-05 | 2007-05-29 | Applied Materials, Inc. | Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer |
US6939434B2 (en) * | 2000-08-11 | 2005-09-06 | Applied Materials, Inc. | Externally excited torroidal plasma source with magnetic control of ion distribution |
US7430984B2 (en) | 2000-08-11 | 2008-10-07 | Applied Materials, Inc. | Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements |
KR100542740B1 (en) * | 2002-11-11 | 2006-01-11 | 삼성전자주식회사 | Method and apparatus for generating a gas plasma, gas compostion for generating a plasma and method for semiconductor processing using the same |
JP4657620B2 (en) * | 2004-04-13 | 2011-03-23 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
KR101246869B1 (en) * | 2005-03-15 | 2013-03-25 | 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. | Profile adjustment in plasma ion implantation |
FR2886051B1 (en) * | 2005-05-20 | 2007-08-10 | Commissariat Energie Atomique | METHOD FOR DETACHING THIN FILM |
EP1727186B1 (en) * | 2005-05-23 | 2012-01-25 | New Power Plasma Co., Ltd. | Plasma chamber with discharge inducing bridge |
JP5257917B2 (en) * | 2006-04-24 | 2013-08-07 | 株式会社ニューパワープラズマ | Inductively coupled plasma reactor with multiple magnetic cores |
US7732309B2 (en) * | 2006-12-08 | 2010-06-08 | Applied Materials, Inc. | Plasma immersed ion implantation process |
US7871828B2 (en) * | 2007-02-06 | 2011-01-18 | Applied Materials, Inc. | In-situ dose monitoring using optical emission spectroscopy |
RU2007105087A (en) * | 2007-02-12 | 2008-08-20 | Борис Федорович Полторацкий (RU) | PLASMA ENERGY CONVERTER AND ELECTROMAGNETIC VORTEX REACTOR FOR ITS IMPLEMENTATION |
US7989329B2 (en) * | 2007-12-21 | 2011-08-02 | Applied Materials, Inc. | Removal of surface dopants from a substrate |
US7968439B2 (en) * | 2008-02-06 | 2011-06-28 | Applied Materials, Inc. | Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces |
US7713757B2 (en) * | 2008-03-14 | 2010-05-11 | Applied Materials, Inc. | Method for measuring dopant concentration during plasma ion implantation |
US8742665B2 (en) * | 2009-11-18 | 2014-06-03 | Applied Materials, Inc. | Plasma source design |
JP2011040786A (en) * | 2010-10-25 | 2011-02-24 | Hitachi High-Technologies Corp | Plasma treatment apparatus |
KR101241049B1 (en) * | 2011-08-01 | 2013-03-15 | 주식회사 플라즈마트 | Plasma generation apparatus and plasma generation method |
SG10201708625XA (en) * | 2013-03-15 | 2017-11-29 | Plasmability Llc | Toroidal plasma processing apparatus |
JP2015215942A (en) * | 2014-05-07 | 2015-12-03 | 国立大学法人金沢大学 | Plasma generator and plasma generation method |
KR20180000721A (en) | 2015-05-21 | 2018-01-03 | 플라즈마빌리티, 엘엘씨 | A toroidal plasma processing apparatus having a shaped workpiece support |
JP2022007611A (en) * | 2020-06-26 | 2022-01-13 | 東京エレクトロン株式会社 | Device for forming plasma, device for processing substrate, and method for forming plasma |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4431898A (en) * | 1981-09-01 | 1984-02-14 | The Perkin-Elmer Corporation | Inductively coupled discharge for plasma etching and resist stripping |
EP0546852A1 (en) * | 1991-12-13 | 1993-06-16 | Hughes Aircraft Company | Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films |
US5542559A (en) * | 1993-02-16 | 1996-08-06 | Tokyo Electron Kabushiki Kaisha | Plasma treatment apparatus |
WO1999000823A1 (en) * | 1997-06-26 | 1999-01-07 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas source |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11135297A (en) * | 1997-10-31 | 1999-05-21 | Kumagai Hiromi | Plasma generator |
KR20020029743A (en) * | 1999-08-06 | 2002-04-19 | 로버트 엠. 포터 | Inductively coupled ring-plasma source apparatus for processing gases and materials and method thereof |
-
2001
- 2001-08-13 JP JP2002519385A patent/JP5204941B2/en not_active Expired - Lifetime
- 2001-08-13 KR KR1020037002020A patent/KR100809889B1/en not_active IP Right Cessation
- 2001-08-13 WO PCT/US2001/025505 patent/WO2002015650A2/en active Application Filing
- 2001-08-13 EP EP01964028A patent/EP1307896A2/en not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4431898A (en) * | 1981-09-01 | 1984-02-14 | The Perkin-Elmer Corporation | Inductively coupled discharge for plasma etching and resist stripping |
EP0546852A1 (en) * | 1991-12-13 | 1993-06-16 | Hughes Aircraft Company | Methods and apparatus for generating a plasma for "downstream" rapid shaping of surfaces of substrates and films |
US5542559A (en) * | 1993-02-16 | 1996-08-06 | Tokyo Electron Kabushiki Kaisha | Plasma treatment apparatus |
WO1999000823A1 (en) * | 1997-06-26 | 1999-01-07 | Applied Science And Technology, Inc. | Toroidal low-field reactive gas source |
Also Published As
Publication number | Publication date |
---|---|
KR20030029130A (en) | 2003-04-11 |
WO2002015650A2 (en) | 2002-02-21 |
KR100809889B1 (en) | 2008-03-06 |
EP1307896A2 (en) | 2003-05-07 |
JP5204941B2 (en) | 2013-06-05 |
JP2004506339A (en) | 2004-02-26 |
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