JP2003086782A - 破壊電圧を高めたｃｃｄデバイスの横型オーバーフロードレイン及びブルーミング防止構造 - Google Patents

破壊電圧を高めたｃｃｄデバイスの横型オーバーフロードレイン及びブルーミング防止構造

Info

Publication number
JP2003086782A
JP2003086782A JP2002240045A JP2002240045A JP2003086782A JP 2003086782 A JP2003086782 A JP 2003086782A JP 2002240045 A JP2002240045 A JP 2002240045A JP 2002240045 A JP2002240045 A JP 2002240045A JP 2003086782 A JP2003086782 A JP 2003086782A
Authority
JP
Japan
Prior art keywords
overflow drain
blooming
image sensor
dielectric
lateral overflow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002240045A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003086782A5 (enExample
Inventor
Edmund K Banghart
ケイ バンハート エドモンド
Eric Gordon Stevens
ゴードン スティーブンス エリック
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of JP2003086782A publication Critical patent/JP2003086782A/ja
Publication of JP2003086782A5 publication Critical patent/JP2003086782A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2002240045A 2001-08-31 2002-08-21 破壊電圧を高めたｃｃｄデバイスの横型オーバーフロードレイン及びブルーミング防止構造 Pending JP2003086782A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/945,034 US6624453B2 (en) 2001-08-31 2001-08-31 Lateral overflow drain, anti-blooming structure for CCD devices having improved breakdown voltage
US09/945,034 2001-08-31

Publications (2)

Publication Number Publication Date
JP2003086782A true JP2003086782A (ja) 2003-03-20
JP2003086782A5 JP2003086782A5 (enExample) 2006-01-19

Family

ID=25482511

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002240045A Pending JP2003086782A (ja) 2001-08-31 2002-08-21 破壊電圧を高めたｃｃｄデバイスの横型オーバーフロードレイン及びブルーミング防止構造

Country Status (4)

Country Link
US (1) US6624453B2 (enExample)
EP (1) EP1289020B1 (enExample)
JP (1) JP2003086782A (enExample)
DE (1) DE60233371D1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006210716A (ja) * 2005-01-28 2006-08-10 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法
JP2009177018A (ja) * 2008-01-25 2009-08-06 Sanyo Electric Co Ltd 固体撮像素子及びその製造方法
JP2010177587A (ja) * 2009-01-30 2010-08-12 Hamamatsu Photonics Kk 電子増倍機能内蔵型の固体撮像素子
JP2015057869A (ja) * 2008-12-10 2015-03-26 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 横型オーバフロードレインを有するイメージセンサ

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7899339B2 (en) * 2002-07-30 2011-03-01 Amplification Technologies Inc. High-sensitivity, high-resolution detector devices and arrays
GB2428516A (en) * 2004-03-18 2007-01-31 E2V Tech Uk Ltd Radiation tolerant CCD structure
US7893981B2 (en) * 2007-02-28 2011-02-22 Eastman Kodak Company Image sensor with variable resolution and sensitivity
US8329499B2 (en) * 2008-12-10 2012-12-11 Truesense Imaging, Inc. Method of forming lateral overflow drain and channel stop regions in image sensors
US8829637B2 (en) 2011-07-29 2014-09-09 Semiconductor Components Industries, Llc Image sensor with controllable vertically integrated photodetectors using a buried layer
US8946612B2 (en) * 2011-07-29 2015-02-03 Semiconductor Components Industries, Llc Image sensor with controllable vertically integrated photodetectors
US9070611B2 (en) 2011-07-29 2015-06-30 Semiconductor Components Industries, Llc Image sensor with controllable vertically integrated photodetectors
US8847285B2 (en) 2011-09-26 2014-09-30 Semiconductor Components Industries, Llc Depleted charge-multiplying CCD image sensor
US10341590B2 (en) * 2016-08-12 2019-07-02 Semiconductor Components Industries, Llc Methods and apparatus for a CCD image sensor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4774557A (en) * 1986-05-15 1988-09-27 General Electric Company Back-illuminated semiconductor imager with charge transfer devices in front surface well structure
US4984047A (en) * 1988-03-21 1991-01-08 Eastman Kodak Company Solid-state image sensor
JP3592772B2 (ja) * 1994-12-19 2004-11-24 株式会社東芝 固体撮像装置
US6608337B2 (en) * 2001-04-12 2003-08-19 Ise Tex, Inc Image sensor with an enhanced near infra-red spectral response and method of making

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006210716A (ja) * 2005-01-28 2006-08-10 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法
JP2009177018A (ja) * 2008-01-25 2009-08-06 Sanyo Electric Co Ltd 固体撮像素子及びその製造方法
JP2015057869A (ja) * 2008-12-10 2015-03-26 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 横型オーバフロードレインを有するイメージセンサ
JP2010177587A (ja) * 2009-01-30 2010-08-12 Hamamatsu Photonics Kk 電子増倍機能内蔵型の固体撮像素子
US8466498B2 (en) 2009-01-30 2013-06-18 Hamamatsu Photonics K.K. Solid state image device having a pair of overflow drains extends along the electron transfer direction at a boundary between channel region and channel stop isolation regions of the multiplication register

Also Published As

Publication number Publication date
EP1289020B1 (en) 2009-08-19
US6624453B2 (en) 2003-09-23
EP1289020A3 (en) 2004-04-21
EP1289020A2 (en) 2003-03-05
DE60233371D1 (de) 2009-10-01
US20030042510A1 (en) 2003-03-06

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