DE60233371D1 - Antiblooming-Struktur mit lateraler Überlauf-Senke für CCD-Vorrichtungen mit verbesserter Durchbruchspannung - Google Patents

Antiblooming-Struktur mit lateraler Überlauf-Senke für CCD-Vorrichtungen mit verbesserter Durchbruchspannung

Info

Publication number
DE60233371D1
DE60233371D1 DE60233371T DE60233371T DE60233371D1 DE 60233371 D1 DE60233371 D1 DE 60233371D1 DE 60233371 T DE60233371 T DE 60233371T DE 60233371 T DE60233371 T DE 60233371T DE 60233371 D1 DE60233371 D1 DE 60233371D1
Authority
DE
Germany
Prior art keywords
breakdown voltage
ccd devices
lateral overflow
improved breakdown
overflow sink
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60233371T
Other languages
German (de)
English (en)
Inventor
Edmund K Banghart
Eric Gordon Stevens
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Application granted granted Critical
Publication of DE60233371D1 publication Critical patent/DE60233371D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
DE60233371T 2001-08-31 2002-08-19 Antiblooming-Struktur mit lateraler Überlauf-Senke für CCD-Vorrichtungen mit verbesserter Durchbruchspannung Expired - Lifetime DE60233371D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/945,034 US6624453B2 (en) 2001-08-31 2001-08-31 Lateral overflow drain, anti-blooming structure for CCD devices having improved breakdown voltage

Publications (1)

Publication Number Publication Date
DE60233371D1 true DE60233371D1 (de) 2009-10-01

Family

ID=25482511

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60233371T Expired - Lifetime DE60233371D1 (de) 2001-08-31 2002-08-19 Antiblooming-Struktur mit lateraler Überlauf-Senke für CCD-Vorrichtungen mit verbesserter Durchbruchspannung

Country Status (4)

Country Link
US (1) US6624453B2 (enExample)
EP (1) EP1289020B1 (enExample)
JP (1) JP2003086782A (enExample)
DE (1) DE60233371D1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7899339B2 (en) * 2002-07-30 2011-03-01 Amplification Technologies Inc. High-sensitivity, high-resolution detector devices and arrays
GB2428516A (en) * 2004-03-18 2007-01-31 E2V Tech Uk Ltd Radiation tolerant CCD structure
JP4967237B2 (ja) * 2005-01-28 2012-07-04 パナソニック株式会社 固体撮像装置
US7893981B2 (en) * 2007-02-28 2011-02-22 Eastman Kodak Company Image sensor with variable resolution and sensitivity
JP2009177018A (ja) * 2008-01-25 2009-08-06 Sanyo Electric Co Ltd 固体撮像素子及びその製造方法
US8329499B2 (en) * 2008-12-10 2012-12-11 Truesense Imaging, Inc. Method of forming lateral overflow drain and channel stop regions in image sensors
EP2359402B1 (en) * 2008-12-10 2012-10-24 Truesense Imaging, Inc. Method of fabricating image sensors with lateral overflow drains
JP5243983B2 (ja) * 2009-01-30 2013-07-24 浜松ホトニクス株式会社 電子増倍機能内蔵型の固体撮像素子
US8829637B2 (en) 2011-07-29 2014-09-09 Semiconductor Components Industries, Llc Image sensor with controllable vertically integrated photodetectors using a buried layer
US8946612B2 (en) * 2011-07-29 2015-02-03 Semiconductor Components Industries, Llc Image sensor with controllable vertically integrated photodetectors
US9070611B2 (en) 2011-07-29 2015-06-30 Semiconductor Components Industries, Llc Image sensor with controllable vertically integrated photodetectors
US8847285B2 (en) 2011-09-26 2014-09-30 Semiconductor Components Industries, Llc Depleted charge-multiplying CCD image sensor
US10341590B2 (en) * 2016-08-12 2019-07-02 Semiconductor Components Industries, Llc Methods and apparatus for a CCD image sensor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4774557A (en) * 1986-05-15 1988-09-27 General Electric Company Back-illuminated semiconductor imager with charge transfer devices in front surface well structure
US4984047A (en) * 1988-03-21 1991-01-08 Eastman Kodak Company Solid-state image sensor
JP3592772B2 (ja) * 1994-12-19 2004-11-24 株式会社東芝 固体撮像装置
US6608337B2 (en) * 2001-04-12 2003-08-19 Ise Tex, Inc Image sensor with an enhanced near infra-red spectral response and method of making

Also Published As

Publication number Publication date
EP1289020B1 (en) 2009-08-19
US6624453B2 (en) 2003-09-23
EP1289020A3 (en) 2004-04-21
EP1289020A2 (en) 2003-03-05
US20030042510A1 (en) 2003-03-06
JP2003086782A (ja) 2003-03-20

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