JP2003059260A - 半導体集積回路 - Google Patents

半導体集積回路

Info

Publication number
JP2003059260A
JP2003059260A JP2001245570A JP2001245570A JP2003059260A JP 2003059260 A JP2003059260 A JP 2003059260A JP 2001245570 A JP2001245570 A JP 2001245570A JP 2001245570 A JP2001245570 A JP 2001245570A JP 2003059260 A JP2003059260 A JP 2003059260A
Authority
JP
Japan
Prior art keywords
circuit
voltage
power supply
supply voltage
node
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001245570A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003059260A5 (https=
Inventor
Yasuo Ito
寧夫 伊藤
Takashi Ogiwara
隆 荻原
Yukito Owaki
幸人 大脇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2001245570A priority Critical patent/JP2003059260A/ja
Publication of JP2003059260A publication Critical patent/JP2003059260A/ja
Publication of JP2003059260A5 publication Critical patent/JP2003059260A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Read Only Memory (AREA)
  • Control Of Electrical Variables (AREA)
  • Dram (AREA)
JP2001245570A 2001-08-13 2001-08-13 半導体集積回路 Pending JP2003059260A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001245570A JP2003059260A (ja) 2001-08-13 2001-08-13 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001245570A JP2003059260A (ja) 2001-08-13 2001-08-13 半導体集積回路

Publications (2)

Publication Number Publication Date
JP2003059260A true JP2003059260A (ja) 2003-02-28
JP2003059260A5 JP2003059260A5 (https=) 2005-07-21

Family

ID=19075291

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001245570A Pending JP2003059260A (ja) 2001-08-13 2001-08-13 半導体集積回路

Country Status (1)

Country Link
JP (1) JP2003059260A (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7164303B2 (en) 2003-11-25 2007-01-16 Seiko Epson Corporation Delay circuit, ferroelectric memory device and electronic equipment
JP2007080478A (ja) * 2005-08-19 2007-03-29 Toshiba Corp 半導体集積回路装置
JP2008234767A (ja) * 2007-03-20 2008-10-02 Toshiba Corp 電源降圧回路
JP2008305499A (ja) * 2007-06-08 2008-12-18 Fujitsu Microelectronics Ltd 半導体集積回路およびシステム
JP2017054340A (ja) * 2015-09-10 2017-03-16 日本電信電話株式会社 分圧バッファ回路
JP2021131915A (ja) * 2020-02-18 2021-09-09 ウィンボンド エレクトロニクス コーポレーション 半導体装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7164303B2 (en) 2003-11-25 2007-01-16 Seiko Epson Corporation Delay circuit, ferroelectric memory device and electronic equipment
JP2007080478A (ja) * 2005-08-19 2007-03-29 Toshiba Corp 半導体集積回路装置
JP2008234767A (ja) * 2007-03-20 2008-10-02 Toshiba Corp 電源降圧回路
JP2008305499A (ja) * 2007-06-08 2008-12-18 Fujitsu Microelectronics Ltd 半導体集積回路およびシステム
US8284619B2 (en) 2007-06-08 2012-10-09 Fujitsu Semiconductor Limited Semiconductor integrated circuit and system
JP2017054340A (ja) * 2015-09-10 2017-03-16 日本電信電話株式会社 分圧バッファ回路
JP2021131915A (ja) * 2020-02-18 2021-09-09 ウィンボンド エレクトロニクス コーポレーション 半導体装置
US11417403B2 (en) 2020-02-18 2022-08-16 Winbond Electronics Corp. Semiconductor device

Similar Documents

Publication Publication Date Title
JP3124781B2 (ja) 半導体集積回路装置
KR100518399B1 (ko) 내부 전압 레벨 제어 회로 및 반도체 기억 장치 및 그들의제어 방법
US6385119B2 (en) Internal supply voltage generating cicuit in a semiconductor memory device and method for controlling the same
JP2003068079A (ja) 半導体記憶回路
US7023262B2 (en) Negative voltage generator for a semiconductor memory device
US20020171470A1 (en) Negative voltage generator for a semiconductor memory device
JP2004139594A (ja) 内部供給電圧のパワーアップ傾きを制御するための内部電圧変換器構造
KR100956776B1 (ko) 네거티브 전압 생성 장치
KR20100085427A (ko) 반도체 메모리 장치의 내부전압 발생회로
CN116027843A (zh) 电压调节器电路和相应的存储器器件
JP2000331478A (ja) メモリデバイス
JP5045294B2 (ja) カスコードカレントミラー回路を有する内部電源回路
JP2010244671A (ja) 内部電源電圧発生回路
US7961531B2 (en) Voltage sensing circuit capable of controlling a pump voltage stably generated in a low voltage environment
JP2002083494A (ja) 半導体集積回路
JP4455562B2 (ja) 半導体装置
US7847624B2 (en) Internal power supply circuit
JP2003059260A (ja) 半導体集積回路
JP5727121B2 (ja) 内部電圧生成回路及びこれを備える半導体装置
JP3869690B2 (ja) 内部電圧レベル制御回路および半導体記憶装置並びにそれらの制御方法
JP3908520B2 (ja) 半導体集積回路及び半導体集積回路のテスト方法
JP2003243516A (ja) 半導体集積回路装置
JP2003132679A (ja) 半導体装置
JPH10172280A (ja) 半導体集積回路
JP2002015571A (ja) 電源電圧制限回路

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041126

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20041126

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070803

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070821

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20080415