JP2003045952A - 載置装置及びその製造方法並びにプラズマ処理装置 - Google Patents
載置装置及びその製造方法並びにプラズマ処理装置Info
- Publication number
- JP2003045952A JP2003045952A JP2002142168A JP2002142168A JP2003045952A JP 2003045952 A JP2003045952 A JP 2003045952A JP 2002142168 A JP2002142168 A JP 2002142168A JP 2002142168 A JP2002142168 A JP 2002142168A JP 2003045952 A JP2003045952 A JP 2003045952A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrostatic chuck
- mounting
- sprayed layer
- mounting body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000000919 ceramic Substances 0.000 claims abstract description 27
- 238000007789 sealing Methods 0.000 claims abstract description 12
- 229920005989 resin Polymers 0.000 claims abstract description 9
- 239000011347 resin Substances 0.000 claims abstract description 9
- 239000000113 methacrylic resin Substances 0.000 claims description 33
- 239000007788 liquid Substances 0.000 claims description 25
- 239000002994 raw material Substances 0.000 claims description 23
- 238000011282 treatment Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 12
- 238000005507 spraying Methods 0.000 claims description 10
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 69
- 239000011148 porous material Substances 0.000 description 20
- 229920002050 silicone resin Polymers 0.000 description 18
- 230000002093 peripheral effect Effects 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000002245 particle Substances 0.000 description 8
- 238000004040 coloring Methods 0.000 description 7
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- 238000005336 cracking Methods 0.000 description 6
- 238000001723 curing Methods 0.000 description 5
- 239000002826 coolant Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 239000001044 red dye Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 238000007865 diluting Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000005470 impregnation Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 229910001200 Ferrotitanium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000002685 polymerization catalyst Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000009849 vacuum degassing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002142168A JP2003045952A (ja) | 2001-05-25 | 2002-05-16 | 載置装置及びその製造方法並びにプラズマ処理装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-156489 | 2001-05-25 | ||
| JP2001156489 | 2001-05-25 | ||
| JP2002142168A JP2003045952A (ja) | 2001-05-25 | 2002-05-16 | 載置装置及びその製造方法並びにプラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003045952A true JP2003045952A (ja) | 2003-02-14 |
| JP2003045952A5 JP2003045952A5 (enExample) | 2005-09-15 |
Family
ID=26615694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002142168A Pending JP2003045952A (ja) | 2001-05-25 | 2002-05-16 | 載置装置及びその製造方法並びにプラズマ処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003045952A (enExample) |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005057234A (ja) * | 2003-07-24 | 2005-03-03 | Kyocera Corp | 静電チャック |
| JP2007005740A (ja) * | 2005-06-23 | 2007-01-11 | Creative Technology:Kk | 静電チャック電位供給部の構造とその製造及び再生方法 |
| KR100697557B1 (ko) * | 2005-02-24 | 2007-03-21 | 주식회사 에이디피엔지니어링 | 플라즈마 처리장치 및 온도조절판 제조방법 |
| CN1310285C (zh) * | 2003-05-12 | 2007-04-11 | 东京毅力科创株式会社 | 处理装置 |
| JP2007194616A (ja) * | 2005-12-22 | 2007-08-02 | Kyocera Corp | サセプタおよびこれを用いたウェハの処理方法 |
| KR100802670B1 (ko) * | 2003-10-31 | 2008-02-12 | 동경 엘렉트론 주식회사 | 정전 흡착 장치, 플라즈마 처리 장치 및 플라즈마 처리 방법 |
| US7837828B2 (en) | 2003-03-12 | 2010-11-23 | Tokyo Electron Limited | Substrate supporting structure for semiconductor processing, and plasma processing device |
| JP2012500498A (ja) * | 2008-08-19 | 2012-01-05 | ラム リサーチ コーポレーション | 静電チャック用エッジリング |
| WO2017010307A1 (ja) * | 2015-07-13 | 2017-01-19 | 住友電気工業株式会社 | ウェハ保持体 |
| WO2021049342A1 (ja) * | 2019-09-11 | 2021-03-18 | 株式会社クリエイティブテクノロジー | 着脱装置 |
| KR20220010172A (ko) * | 2020-07-17 | 2022-01-25 | 와이엠씨 주식회사 | 정전척의 유전체 층의 봉공처리방법 |
| KR20220093089A (ko) * | 2020-12-24 | 2022-07-05 | 도카로 가부시키가이샤 | 정전 척 및 처리 장치 |
| JP2022154714A (ja) * | 2021-03-30 | 2022-10-13 | 東京エレクトロン株式会社 | 基板載置台の研磨方法及び基板処理装置 |
| CN115295459A (zh) * | 2022-08-26 | 2022-11-04 | 苏州众芯联电子材料有限公司 | 静电卡盘加热件制作工艺、静电卡盘制作工艺、静电卡盘 |
| JP2023105611A (ja) * | 2022-01-19 | 2023-07-31 | 日本特殊陶業株式会社 | 保持装置および保持装置の製造方法 |
| JP7785982B2 (ja) | 2025-01-09 | 2025-12-15 | 東京エレクトロン株式会社 | 基板載置台の研磨方法及び基板載置台 |
-
2002
- 2002-05-16 JP JP2002142168A patent/JP2003045952A/ja active Pending
Cited By (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7837828B2 (en) | 2003-03-12 | 2010-11-23 | Tokyo Electron Limited | Substrate supporting structure for semiconductor processing, and plasma processing device |
| CN1310285C (zh) * | 2003-05-12 | 2007-04-11 | 东京毅力科创株式会社 | 处理装置 |
| JP2005057234A (ja) * | 2003-07-24 | 2005-03-03 | Kyocera Corp | 静電チャック |
| KR100802670B1 (ko) * | 2003-10-31 | 2008-02-12 | 동경 엘렉트론 주식회사 | 정전 흡착 장치, 플라즈마 처리 장치 및 플라즈마 처리 방법 |
| KR100697557B1 (ko) * | 2005-02-24 | 2007-03-21 | 주식회사 에이디피엔지니어링 | 플라즈마 처리장치 및 온도조절판 제조방법 |
| JP2007005740A (ja) * | 2005-06-23 | 2007-01-11 | Creative Technology:Kk | 静電チャック電位供給部の構造とその製造及び再生方法 |
| JP2007194616A (ja) * | 2005-12-22 | 2007-08-02 | Kyocera Corp | サセプタおよびこれを用いたウェハの処理方法 |
| KR101573962B1 (ko) * | 2008-08-19 | 2015-12-02 | 램 리써치 코포레이션 | 정전척용 에지 링 |
| JP2012500498A (ja) * | 2008-08-19 | 2012-01-05 | ラム リサーチ コーポレーション | 静電チャック用エッジリング |
| WO2017010307A1 (ja) * | 2015-07-13 | 2017-01-19 | 住友電気工業株式会社 | ウェハ保持体 |
| JP2017022284A (ja) * | 2015-07-13 | 2017-01-26 | 住友電気工業株式会社 | ウェハ保持体 |
| US10886157B2 (en) | 2015-07-13 | 2021-01-05 | Sumitomo Electric Industries, Ltd. | Wafer holding unit |
| US12033880B2 (en) | 2015-07-13 | 2024-07-09 | Sumitomo Electric Industries, Ltd. | Wafer holding body |
| US11911863B2 (en) | 2019-09-11 | 2024-02-27 | Creative Technology Corporation | Attachment and detachment device |
| WO2021049342A1 (ja) * | 2019-09-11 | 2021-03-18 | 株式会社クリエイティブテクノロジー | 着脱装置 |
| JPWO2021049342A1 (ja) * | 2019-09-11 | 2021-09-27 | 株式会社クリエイティブテクノロジー | 着脱装置 |
| KR20220020366A (ko) * | 2019-09-11 | 2022-02-18 | 가부시키가이샤 크리에이티브 테크놀러지 | 탈착 장치 |
| KR102698029B1 (ko) * | 2019-09-11 | 2024-08-22 | 가부시키가이샤 크리에이티브 테크놀러지 | 탈착 장치 |
| JP7078826B2 (ja) | 2019-09-11 | 2022-06-01 | 株式会社クリエイティブテクノロジー | 着脱装置 |
| KR20220010172A (ko) * | 2020-07-17 | 2022-01-25 | 와이엠씨 주식회사 | 정전척의 유전체 층의 봉공처리방법 |
| KR102387231B1 (ko) | 2020-07-17 | 2022-04-15 | 와이엠씨 주식회사 | 정전척의 유전체 층의 봉공처리방법 |
| KR102626584B1 (ko) | 2020-12-24 | 2024-01-18 | 도카로 가부시키가이샤 | 정전 척 및 처리 장치 |
| KR20220093089A (ko) * | 2020-12-24 | 2022-07-05 | 도카로 가부시키가이샤 | 정전 척 및 처리 장치 |
| JP2022154714A (ja) * | 2021-03-30 | 2022-10-13 | 東京エレクトロン株式会社 | 基板載置台の研磨方法及び基板処理装置 |
| JP7619862B2 (ja) | 2021-03-30 | 2025-01-22 | 東京エレクトロン株式会社 | 基板載置台の研磨方法及び基板処理装置 |
| JP2025061168A (ja) * | 2021-03-30 | 2025-04-10 | 東京エレクトロン株式会社 | 基板載置台の研磨方法及び基板載置台 |
| JP2023105611A (ja) * | 2022-01-19 | 2023-07-31 | 日本特殊陶業株式会社 | 保持装置および保持装置の製造方法 |
| JP7698590B2 (ja) | 2022-01-19 | 2025-06-25 | 日本特殊陶業株式会社 | 保持装置および保持装置の製造方法 |
| CN115295459A (zh) * | 2022-08-26 | 2022-11-04 | 苏州众芯联电子材料有限公司 | 静电卡盘加热件制作工艺、静电卡盘制作工艺、静电卡盘 |
| JP7785982B2 (ja) | 2025-01-09 | 2025-12-15 | 東京エレクトロン株式会社 | 基板載置台の研磨方法及び基板載置台 |
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