JP2002542603A - 端面劣化低減構造を備えたｉｉ−ｖｉレーザダイオード - Google Patents
端面劣化低減構造を備えたｉｉ−ｖｉレーザダイオードInfo
- Publication number
- JP2002542603A JP2002542603A JP2000521577A JP2000521577A JP2002542603A JP 2002542603 A JP2002542603 A JP 2002542603A JP 2000521577 A JP2000521577 A JP 2000521577A JP 2000521577 A JP2000521577 A JP 2000521577A JP 2002542603 A JP2002542603 A JP 2002542603A
- Authority
- JP
- Japan
- Prior art keywords
- face
- laser diode
- electrode
- semiconductor body
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000015556 catabolic process Effects 0.000 title claims abstract description 25
- 238000006731 degradation reaction Methods 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 83
- 238000002955 isolation Methods 0.000 claims description 20
- 238000005253 cladding Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 238000004891 communication Methods 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 4
- 238000013500 data storage Methods 0.000 claims description 3
- 229910015894 BeTe Inorganic materials 0.000 claims description 2
- 229910007709 ZnTe Inorganic materials 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 230000006866 deterioration Effects 0.000 abstract description 10
- 230000005684 electric field Effects 0.000 abstract description 10
- 230000006798 recombination Effects 0.000 description 8
- 238000005215 recombination Methods 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000006378 damage Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/972,025 | 1997-11-17 | ||
| US08/972,025 US5974070A (en) | 1997-11-17 | 1997-11-17 | II-VI laser diode with facet degradation reduction structure |
| PCT/US1998/023637 WO1999026325A1 (en) | 1997-11-17 | 1998-11-06 | Ii-vi laser diode with facet degradation reduction structure |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009235653A Division JP2010010713A (ja) | 1997-11-17 | 2009-10-09 | 端面劣化低減構造を備えたｉｉ−ｖｉレーザダイオード |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002542603A true JP2002542603A (ja) | 2002-12-10 |
| JP2002542603A5 JP2002542603A5 (https=) | 2006-01-05 |
Family
ID=25519065
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000521577A Withdrawn JP2002542603A (ja) | 1997-11-17 | 1998-11-06 | 端面劣化低減構造を備えたｉｉ−ｖｉレーザダイオード |
| JP2009235653A Withdrawn JP2010010713A (ja) | 1997-11-17 | 2009-10-09 | 端面劣化低減構造を備えたｉｉ−ｖｉレーザダイオード |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009235653A Withdrawn JP2010010713A (ja) | 1997-11-17 | 2009-10-09 | 端面劣化低減構造を備えたｉｉ−ｖｉレーザダイオード |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US5974070A (https=) |
| EP (1) | EP1034585B1 (https=) |
| JP (2) | JP2002542603A (https=) |
| KR (1) | KR100549384B1 (https=) |
| CN (1) | CN1278961A (https=) |
| AU (1) | AU1384399A (https=) |
| DE (1) | DE69813286T2 (https=) |
| MY (1) | MY117928A (https=) |
| WO (1) | WO1999026325A1 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7466404B1 (en) * | 2005-06-03 | 2008-12-16 | Sun Microsystems, Inc. | Technique for diagnosing and screening optical interconnect light sources |
| GB2427752A (en) * | 2005-06-28 | 2007-01-03 | Bookham Technology Plc | High power semiconductor laser diode |
| JP2009088066A (ja) * | 2007-09-28 | 2009-04-23 | Panasonic Corp | 半導体装置 |
| CN102197554A (zh) * | 2008-09-04 | 2011-09-21 | 3M创新有限公司 | 单色光源 |
| WO2010027580A2 (en) * | 2008-09-04 | 2010-03-11 | 3M Innovative Properties Company | Light source having light blocking components |
| JP2012502473A (ja) * | 2008-09-04 | 2012-01-26 | スリーエム イノベイティブ プロパティズ カンパニー | 窒化ガリウムレーザダイオードによって光励起された、ヒートシンク上のｉｉ−ｖｉ多重量子井戸垂直共振器面発光レーザー |
| CN103887704B (zh) * | 2014-03-27 | 2016-06-01 | 北京牡丹电子集团有限责任公司 | 一种用于半导体激光器p面向下封装的热沉及其制作方法 |
| EP3360210A1 (en) * | 2015-10-05 | 2018-08-15 | King Abdullah University Of Science And Technology | An apparatus comprising a waveguide-modulator and laser-diode and a method of manufacture thereof |
| CN118783236B (zh) * | 2024-09-13 | 2025-02-07 | 度亘核芯光电技术(苏州)有限公司 | 芯片及其制备方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4608697A (en) * | 1983-04-11 | 1986-08-26 | At&T Bell Laboratories | Spectral control arrangement for coupled cavity laser |
| US4764934A (en) * | 1987-07-27 | 1988-08-16 | Ortel Corporation | Superluminescent diode and single mode laser |
| JPH069280B2 (ja) * | 1988-06-21 | 1994-02-02 | 松下電器産業株式会社 | 半導体レーザ装置 |
| DE3916964A1 (de) * | 1989-05-24 | 1990-11-29 | Siemens Ag | Halbleiterlaseranordnung mit ladungstraegerextraktion im spiegelbereich |
| CN1119358A (zh) * | 1991-05-15 | 1996-03-27 | 明尼苏达州采矿制造公司 | 蓝-绿激光二极管 |
| US5396103A (en) * | 1991-05-15 | 1995-03-07 | Minnesota Mining And Manufacturing Company | Graded composition ohmic contact for P-type II-VI semiconductors |
| US5165105A (en) * | 1991-08-02 | 1992-11-17 | Minnesota Minning And Manufacturing Company | Separate confinement electroabsorption modulator utilizing the Franz-Keldysh effect |
| KR100292308B1 (ko) * | 1992-06-19 | 2001-09-17 | 이데이 노부유끼 | 반도체장치 |
| US5363395A (en) * | 1992-12-28 | 1994-11-08 | North American Philips Corporation | Blue-green injection laser structure utilizing II-VI compounds |
| JP3239550B2 (ja) * | 1993-08-30 | 2001-12-17 | ソニー株式会社 | 半導体レーザ |
| JPH0897518A (ja) * | 1994-09-28 | 1996-04-12 | Sony Corp | 半導体発光素子 |
| US5818859A (en) * | 1996-06-27 | 1998-10-06 | Minnesota Mining And Manufacturing Company | Be-containing II-VI blue-green laser diodes |
-
1997
- 1997-11-17 US US08/972,025 patent/US5974070A/en not_active Expired - Lifetime
-
1998
- 1998-11-06 JP JP2000521577A patent/JP2002542603A/ja not_active Withdrawn
- 1998-11-06 WO PCT/US1998/023637 patent/WO1999026325A1/en not_active Ceased
- 1998-11-06 EP EP98957626A patent/EP1034585B1/en not_active Expired - Lifetime
- 1998-11-06 DE DE69813286T patent/DE69813286T2/de not_active Expired - Lifetime
- 1998-11-06 AU AU13843/99A patent/AU1384399A/en not_active Abandoned
- 1998-11-06 CN CN98811176A patent/CN1278961A/zh active Pending
- 1998-11-06 KR KR1020007005329A patent/KR100549384B1/ko not_active Expired - Fee Related
- 1998-11-12 MY MYPI98005135A patent/MY117928A/en unknown
-
2009
- 2009-10-09 JP JP2009235653A patent/JP2010010713A/ja not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| EP1034585B1 (en) | 2003-04-09 |
| WO1999026325A1 (en) | 1999-05-27 |
| AU1384399A (en) | 1999-06-07 |
| KR100549384B1 (ko) | 2006-02-08 |
| CN1278961A (zh) | 2001-01-03 |
| JP2010010713A (ja) | 2010-01-14 |
| EP1034585A1 (en) | 2000-09-13 |
| US5974070A (en) | 1999-10-26 |
| DE69813286D1 (de) | 2003-05-15 |
| DE69813286T2 (de) | 2003-12-18 |
| KR20010032142A (ko) | 2001-04-16 |
| MY117928A (en) | 2004-08-30 |
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Legal Events
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