CN1278961A - 具有减小小面退化结构的ⅱ－ⅵ族激光二极管 - Google Patents

具有减小小面退化结构的ⅱ－ⅵ族激光二极管 Download PDF

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Publication number
CN1278961A
CN1278961A CN98811176A CN98811176A CN1278961A CN 1278961 A CN1278961 A CN 1278961A CN 98811176 A CN98811176 A CN 98811176A CN 98811176 A CN98811176 A CN 98811176A CN 1278961 A CN1278961 A CN 1278961A
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CN
China
Prior art keywords
facet
laser diode
electrode
semiconductor body
photosensitive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN98811176A
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English (en)
Chinese (zh)
Inventor
M·A·哈泽
P·F·鲍德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Co
Original Assignee
Minnesota Mining and Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Minnesota Mining and Manufacturing Co filed Critical Minnesota Mining and Manufacturing Co
Publication of CN1278961A publication Critical patent/CN1278961A/zh
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
CN98811176A 1997-11-17 1998-11-06 具有减小小面退化结构的ⅱ－ⅵ族激光二极管 Pending CN1278961A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/972,025 1997-11-17
US08/972,025 US5974070A (en) 1997-11-17 1997-11-17 II-VI laser diode with facet degradation reduction structure

Publications (1)

Publication Number Publication Date
CN1278961A true CN1278961A (zh) 2001-01-03

Family

ID=25519065

Family Applications (1)

Application Number Title Priority Date Filing Date
CN98811176A Pending CN1278961A (zh) 1997-11-17 1998-11-06 具有减小小面退化结构的ⅱ－ⅵ族激光二极管

Country Status (9)

Country Link
US (1) US5974070A (https=)
EP (1) EP1034585B1 (https=)
JP (2) JP2002542603A (https=)
KR (1) KR100549384B1 (https=)
CN (1) CN1278961A (https=)
AU (1) AU1384399A (https=)
DE (1) DE69813286T2 (https=)
MY (1) MY117928A (https=)
WO (1) WO1999026325A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102197554A (zh) * 2008-09-04 2011-09-21 3M创新有限公司 单色光源
CN103887704A (zh) * 2014-03-27 2014-06-25 北京牡丹电子集团有限责任公司 一种用于半导体激光器p面向下封装的热沉及其制作方法
CN118783236A (zh) * 2024-09-13 2024-10-15 度亘核芯光电技术(苏州)有限公司 芯片及其制备方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7466404B1 (en) * 2005-06-03 2008-12-16 Sun Microsystems, Inc. Technique for diagnosing and screening optical interconnect light sources
GB2427752A (en) * 2005-06-28 2007-01-03 Bookham Technology Plc High power semiconductor laser diode
JP2009088066A (ja) * 2007-09-28 2009-04-23 Panasonic Corp 半導体装置
WO2010027580A2 (en) * 2008-09-04 2010-03-11 3M Innovative Properties Company Light source having light blocking components
JP2012502473A (ja) * 2008-09-04 2012-01-26 スリーエム イノベイティブ プロパティズ カンパニー 窒化ガリウムレーザダイオードによって光励起された、ヒートシンク上のｉｉ−ｖｉ多重量子井戸垂直共振器面発光レーザー
EP3360210A1 (en) * 2015-10-05 2018-08-15 King Abdullah University Of Science And Technology An apparatus comprising a waveguide-modulator and laser-diode and a method of manufacture thereof

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4608697A (en) * 1983-04-11 1986-08-26 At&T Bell Laboratories Spectral control arrangement for coupled cavity laser
US4764934A (en) * 1987-07-27 1988-08-16 Ortel Corporation Superluminescent diode and single mode laser
JPH069280B2 (ja) * 1988-06-21 1994-02-02 松下電器産業株式会社 半導体レーザ装置
DE3916964A1 (de) * 1989-05-24 1990-11-29 Siemens Ag Halbleiterlaseranordnung mit ladungstraegerextraktion im spiegelbereich
CN1119358A (zh) * 1991-05-15 1996-03-27 明尼苏达州采矿制造公司 蓝-绿激光二极管
US5396103A (en) * 1991-05-15 1995-03-07 Minnesota Mining And Manufacturing Company Graded composition ohmic contact for P-type II-VI semiconductors
US5165105A (en) * 1991-08-02 1992-11-17 Minnesota Minning And Manufacturing Company Separate confinement electroabsorption modulator utilizing the Franz-Keldysh effect
KR100292308B1 (ko) * 1992-06-19 2001-09-17 이데이 노부유끼 반도체장치
US5363395A (en) * 1992-12-28 1994-11-08 North American Philips Corporation Blue-green injection laser structure utilizing II-VI compounds
JP3239550B2 (ja) * 1993-08-30 2001-12-17 ソニー株式会社 半導体レーザ
JPH0897518A (ja) * 1994-09-28 1996-04-12 Sony Corp 半導体発光素子
US5818859A (en) * 1996-06-27 1998-10-06 Minnesota Mining And Manufacturing Company Be-containing II-VI blue-green laser diodes

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102197554A (zh) * 2008-09-04 2011-09-21 3M创新有限公司 单色光源
CN103887704A (zh) * 2014-03-27 2014-06-25 北京牡丹电子集团有限责任公司 一种用于半导体激光器p面向下封装的热沉及其制作方法
CN103887704B (zh) * 2014-03-27 2016-06-01 北京牡丹电子集团有限责任公司 一种用于半导体激光器p面向下封装的热沉及其制作方法
CN118783236A (zh) * 2024-09-13 2024-10-15 度亘核芯光电技术(苏州)有限公司 芯片及其制备方法
CN118783236B (zh) * 2024-09-13 2025-02-07 度亘核芯光电技术(苏州)有限公司 芯片及其制备方法

Also Published As

Publication number Publication date
EP1034585B1 (en) 2003-04-09
WO1999026325A1 (en) 1999-05-27
AU1384399A (en) 1999-06-07
JP2002542603A (ja) 2002-12-10
KR100549384B1 (ko) 2006-02-08
JP2010010713A (ja) 2010-01-14
EP1034585A1 (en) 2000-09-13
US5974070A (en) 1999-10-26
DE69813286D1 (de) 2003-05-15
DE69813286T2 (de) 2003-12-18
KR20010032142A (ko) 2001-04-16
MY117928A (en) 2004-08-30

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