KR100549384B1 - 단면 열화 저감 구조를 갖는 ⅱ-ⅵ족 레이저 다이오드 - Google Patents

단면 열화 저감 구조를 갖는 ⅱ-ⅵ족 레이저 다이오드 Download PDF

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Publication number
KR100549384B1
KR100549384B1 KR1020007005329A KR20007005329A KR100549384B1 KR 100549384 B1 KR100549384 B1 KR 100549384B1 KR 1020007005329 A KR1020007005329 A KR 1020007005329A KR 20007005329 A KR20007005329 A KR 20007005329A KR 100549384 B1 KR100549384 B1 KR 100549384B1
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South Korea
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electrode
cross
laser diode
active layer
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Expired - Fee Related
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KR1020007005329A
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English (en)
Korean (ko)
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KR20010032142A (ko
Inventor
하아스마이클에이
버드폴에프
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미네소타 마이닝 앤드 매뉴팩춰링 캄파니
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
KR1020007005329A 1997-11-17 1998-11-06 단면 열화 저감 구조를 갖는 ⅱ-ⅵ족 레이저 다이오드 Expired - Fee Related KR100549384B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US8/972,025 1997-11-17
US08/972,025 1997-11-17
US08/972,025 US5974070A (en) 1997-11-17 1997-11-17 II-VI laser diode with facet degradation reduction structure
PCT/US1998/023637 WO1999026325A1 (en) 1997-11-17 1998-11-06 Ii-vi laser diode with facet degradation reduction structure

Publications (2)

Publication Number Publication Date
KR20010032142A KR20010032142A (ko) 2001-04-16
KR100549384B1 true KR100549384B1 (ko) 2006-02-08

Family

ID=25519065

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020007005329A Expired - Fee Related KR100549384B1 (ko) 1997-11-17 1998-11-06 단면 열화 저감 구조를 갖는 ⅱ-ⅵ족 레이저 다이오드

Country Status (9)

Country Link
US (1) US5974070A (https=)
EP (1) EP1034585B1 (https=)
JP (2) JP2002542603A (https=)
KR (1) KR100549384B1 (https=)
CN (1) CN1278961A (https=)
AU (1) AU1384399A (https=)
DE (1) DE69813286T2 (https=)
MY (1) MY117928A (https=)
WO (1) WO1999026325A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7466404B1 (en) * 2005-06-03 2008-12-16 Sun Microsystems, Inc. Technique for diagnosing and screening optical interconnect light sources
GB2427752A (en) * 2005-06-28 2007-01-03 Bookham Technology Plc High power semiconductor laser diode
JP2009088066A (ja) * 2007-09-28 2009-04-23 Panasonic Corp 半導体装置
CN102197554A (zh) * 2008-09-04 2011-09-21 3M创新有限公司 单色光源
WO2010027580A2 (en) * 2008-09-04 2010-03-11 3M Innovative Properties Company Light source having light blocking components
JP2012502473A (ja) * 2008-09-04 2012-01-26 スリーエム イノベイティブ プロパティズ カンパニー 窒化ガリウムレーザダイオードによって光励起された、ヒートシンク上のｉｉ−ｖｉ多重量子井戸垂直共振器面発光レーザー
CN103887704B (zh) * 2014-03-27 2016-06-01 北京牡丹电子集团有限责任公司 一种用于半导体激光器p面向下封装的热沉及其制作方法
EP3360210A1 (en) * 2015-10-05 2018-08-15 King Abdullah University Of Science And Technology An apparatus comprising a waveguide-modulator and laser-diode and a method of manufacture thereof
CN118783236B (zh) * 2024-09-13 2025-02-07 度亘核芯光电技术(苏州)有限公司 芯片及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4608697A (en) * 1983-04-11 1986-08-26 At&T Bell Laboratories Spectral control arrangement for coupled cavity laser
US4764934A (en) * 1987-07-27 1988-08-16 Ortel Corporation Superluminescent diode and single mode laser
JPH069280B2 (ja) * 1988-06-21 1994-02-02 松下電器産業株式会社 半導体レーザ装置
DE3916964A1 (de) * 1989-05-24 1990-11-29 Siemens Ag Halbleiterlaseranordnung mit ladungstraegerextraktion im spiegelbereich
CN1119358A (zh) * 1991-05-15 1996-03-27 明尼苏达州采矿制造公司 蓝-绿激光二极管
US5396103A (en) * 1991-05-15 1995-03-07 Minnesota Mining And Manufacturing Company Graded composition ohmic contact for P-type II-VI semiconductors
US5165105A (en) * 1991-08-02 1992-11-17 Minnesota Minning And Manufacturing Company Separate confinement electroabsorption modulator utilizing the Franz-Keldysh effect
KR100292308B1 (ko) * 1992-06-19 2001-09-17 이데이 노부유끼 반도체장치
US5363395A (en) * 1992-12-28 1994-11-08 North American Philips Corporation Blue-green injection laser structure utilizing II-VI compounds
JP3239550B2 (ja) * 1993-08-30 2001-12-17 ソニー株式会社 半導体レーザ
JPH0897518A (ja) * 1994-09-28 1996-04-12 Sony Corp 半導体発光素子
US5818859A (en) * 1996-06-27 1998-10-06 Minnesota Mining And Manufacturing Company Be-containing II-VI blue-green laser diodes

Also Published As

Publication number Publication date
EP1034585B1 (en) 2003-04-09
WO1999026325A1 (en) 1999-05-27
AU1384399A (en) 1999-06-07
JP2002542603A (ja) 2002-12-10
CN1278961A (zh) 2001-01-03
JP2010010713A (ja) 2010-01-14
EP1034585A1 (en) 2000-09-13
US5974070A (en) 1999-10-26
DE69813286D1 (de) 2003-05-15
DE69813286T2 (de) 2003-12-18
KR20010032142A (ko) 2001-04-16
MY117928A (en) 2004-08-30

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