JP2002538606A5 - - Google Patents

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Publication number
JP2002538606A5
JP2002538606A5 JP2000601693A JP2000601693A JP2002538606A5 JP 2002538606 A5 JP2002538606 A5 JP 2002538606A5 JP 2000601693 A JP2000601693 A JP 2000601693A JP 2000601693 A JP2000601693 A JP 2000601693A JP 2002538606 A5 JP2002538606 A5 JP 2002538606A5
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JP
Japan
Prior art keywords
gating
nanotube
nanotubes
nanodevice
external
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Granted
Application number
JP2000601693A
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English (en)
Japanese (ja)
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JP2002538606A (ja
JP4039600B2 (ja
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Priority claimed from PCT/US2000/004220 external-priority patent/WO2000051186A1/en
Publication of JP2002538606A publication Critical patent/JP2002538606A/ja
Publication of JP2002538606A5 publication Critical patent/JP2002538606A5/ja
Application granted granted Critical
Publication of JP4039600B2 publication Critical patent/JP4039600B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000601693A 1999-02-22 2000-02-18 ナノ構造デバイス及び装置 Expired - Fee Related JP4039600B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US25350699A 1999-02-22 1999-02-22
US09/253,506 1999-02-22
PCT/US2000/004220 WO2000051186A1 (en) 1999-02-22 2000-02-18 Nanostructure device and apparatus

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006063385A Division JP4512054B2 (ja) 1999-02-22 2006-03-08 ナノチューブの分離およびアラインメント用装置及び、原子顕微鏡の位置合わせ装置

Publications (3)

Publication Number Publication Date
JP2002538606A JP2002538606A (ja) 2002-11-12
JP2002538606A5 true JP2002538606A5 (https=) 2007-03-08
JP4039600B2 JP4039600B2 (ja) 2008-01-30

Family

ID=22960568

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2000601693A Expired - Fee Related JP4039600B2 (ja) 1999-02-22 2000-02-18 ナノ構造デバイス及び装置
JP2006063385A Expired - Fee Related JP4512054B2 (ja) 1999-02-22 2006-03-08 ナノチューブの分離およびアラインメント用装置及び、原子顕微鏡の位置合わせ装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2006063385A Expired - Fee Related JP4512054B2 (ja) 1999-02-22 2006-03-08 ナノチューブの分離およびアラインメント用装置及び、原子顕微鏡の位置合わせ装置

Country Status (6)

Country Link
EP (1) EP1159761B1 (https=)
JP (2) JP4039600B2 (https=)
KR (2) KR100679547B1 (https=)
AT (1) ATE465519T1 (https=)
DE (1) DE60044238D1 (https=)
WO (1) WO2000051186A1 (https=)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001003208A1 (en) 1999-07-02 2001-01-11 President And Fellows Of Harvard College Nanoscopic wire-based devices, arrays, and methods of their manufacture
EP1299914B1 (de) * 2000-07-04 2008-04-02 Qimonda AG Feldeffekttransistor
DE10036897C1 (de) 2000-07-28 2002-01-03 Infineon Technologies Ag Feldeffekttransistor, Schaltungsanordnung und Verfahren zum Herstellen eines Feldeffekttransistors
WO2003005450A2 (en) * 2001-05-18 2003-01-16 President And Fellows Of Harvard College Nanoscale wires and related devices
US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
KR20030055346A (ko) 2000-12-11 2003-07-02 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 나노센서
JP4676073B2 (ja) * 2001-02-13 2011-04-27 エスアイアイ・ナノテクノロジー株式会社 マスクの白欠陥修正方法
JP2004537174A (ja) * 2001-07-26 2004-12-09 テクニシェ ユニヴェルシテイト デルフト カーボンナノチューブを利用した電子デバイス
AU2002352814A1 (en) 2001-11-20 2003-06-10 Andrew R. Barron Coated fullerenes, composites and dielectrics made therefrom
US6891227B2 (en) 2002-03-20 2005-05-10 International Business Machines Corporation Self-aligned nanotube field effect transistor and method of fabricating same
JP3522261B2 (ja) * 2002-04-18 2004-04-26 日本電気株式会社 ナノチューブ、近接場光検出装置および近接場光検出方法
JP5016190B2 (ja) 2002-05-02 2012-09-05 株式会社イデアルスター 線状素子及びその製造方法
AU2003261205A1 (en) 2002-07-19 2004-02-09 President And Fellows Of Harvard College Nanoscale coherent optical components
DE60334723D1 (de) * 2002-11-19 2010-12-09 Univ Rice William M Feldeffektransistor mit funktionalisierter Kohlenstoffnanoröhre und dessen Herstellungsfervahren
AU2003295721A1 (en) 2002-11-19 2004-06-15 William Marsh Rice University Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission
JP2004235618A (ja) * 2003-01-10 2004-08-19 Sanyo Electric Co Ltd カーボンナノチューブを用いた配線、単一電子トランジスタおよびキャパシタ
EP1508926A1 (en) * 2003-08-19 2005-02-23 Hitachi, Ltd. Nanotube transistor device
DE102004003374A1 (de) * 2004-01-22 2005-08-25 Infineon Technologies Ag Halbleiter-Leistungsschalter sowie dafür geeignetes Herstellungsverfahren
FR2868201B1 (fr) * 2004-03-23 2007-06-29 Ecole Polytechnique Dgar Procede de fabrication de composants electroniques et composants electroniques obtenus par ce procede
KR101100887B1 (ko) * 2005-03-17 2012-01-02 삼성전자주식회사 박막 트랜지스터, 박막 트랜지스터 표시판 및 그 제조 방법
US9102521B2 (en) 2006-06-12 2015-08-11 President And Fellows Of Harvard College Nanosensors and related technologies
US8058640B2 (en) 2006-09-11 2011-11-15 President And Fellows Of Harvard College Branched nanoscale wires
WO2008127314A1 (en) 2006-11-22 2008-10-23 President And Fellows Of Harvard College High-sensitivity nanoscale wire sensors
JP2011523200A (ja) * 2008-04-15 2011-08-04 クナノ アーベー ナノワイヤラップゲートデバイス
US8166819B2 (en) * 2008-07-24 2012-05-01 Northrop Grumman Systems Corporation Standing wave field induced force
JP2012528020A (ja) 2009-05-26 2012-11-12 ナノシス・インク． ナノワイヤおよび他のデバイスの電場沈着のための方法およびシステム
DE102009040916B4 (de) 2009-09-11 2013-01-17 Marko Behrens Faltbecher
US9297796B2 (en) 2009-09-24 2016-03-29 President And Fellows Of Harvard College Bent nanowires and related probing of species
KR101123958B1 (ko) * 2010-04-02 2012-03-23 서울시립대학교 산학협력단 그래핀과 전도체 선들을 이용한 나노 트랜지스터
CN107564946A (zh) * 2016-07-01 2018-01-09 清华大学 纳米晶体管
CN107564917B (zh) * 2016-07-01 2020-06-09 清华大学 纳米异质结构
CN107564947A (zh) * 2016-07-01 2018-01-09 清华大学 纳米异质结构
CN107564910B (zh) * 2016-07-01 2020-08-11 清华大学 半导体器件

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62160688A (ja) * 1986-01-08 1987-07-16 株式会社東芝 誘導加熱調理器
AT390739B (de) * 1988-11-03 1990-06-25 Ewald Dipl Ing Dr Benes Verfahren und einrichtung zur separation von teilchen, welche in einem dispersionsmittel dispergiert sind
JPH04329836A (ja) * 1991-04-30 1992-11-18 Daiki Alum Kogyosho:Kk アルミニウムスクラップの前処理方法
JPH07118270B2 (ja) * 1993-10-25 1995-12-18 日本電気株式会社 カーボンナノチューブトランジスタ
EP0783662B1 (en) * 1994-08-27 1999-04-07 International Business Machines Corporation Fine positioning apparatus with atomic resolution
JP2700058B2 (ja) * 1996-01-23 1998-01-19 工業技術院長 超音波を用いた非接触マイクロマニピュレーション方法
JP2000516708A (ja) * 1996-08-08 2000-12-12 ウィリアム・マーシュ・ライス・ユニバーシティ ナノチューブ組立体から作製された巨視的操作可能なナノ規模の装置
KR100277881B1 (ko) * 1998-06-16 2001-02-01 김영환 트랜지스터

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