KR100679547B1 - 극미세구조 소자 및 장치 - Google Patents

극미세구조 소자 및 장치 Download PDF

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Publication number
KR100679547B1
KR100679547B1 KR1020017009805A KR20017009805A KR100679547B1 KR 100679547 B1 KR100679547 B1 KR 100679547B1 KR 1020017009805 A KR1020017009805 A KR 1020017009805A KR 20017009805 A KR20017009805 A KR 20017009805A KR 100679547 B1 KR100679547 B1 KR 100679547B1
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nanotube
nanotubes
gate
conductive
barrier
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KR20020001730A (ko
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조셉 이. 쥬니어 클로손
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조셉 이. 쥬니어 클로손
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/18—Memory cell being a nanowire having RADIAL composition
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Composite Materials (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Inorganic Insulating Materials (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thermistors And Varistors (AREA)
KR1020017009805A 1999-02-22 2000-02-18 극미세구조 소자 및 장치 Expired - Fee Related KR100679547B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US25350699A 1999-02-22 1999-02-22
US09/253,506 1999-02-22

Related Child Applications (1)

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KR1020047008565A Division KR100636951B1 (ko) 1999-02-22 2000-02-18 극미세구조 소자 및 장치

Publications (2)

Publication Number Publication Date
KR20020001730A KR20020001730A (ko) 2002-01-09
KR100679547B1 true KR100679547B1 (ko) 2007-02-07

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KR1020017009805A Expired - Fee Related KR100679547B1 (ko) 1999-02-22 2000-02-18 극미세구조 소자 및 장치
KR1020047008565A Expired - Fee Related KR100636951B1 (ko) 1999-02-22 2000-02-18 극미세구조 소자 및 장치

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Country Link
EP (1) EP1159761B1 (https=)
JP (2) JP4039600B2 (https=)
KR (2) KR100679547B1 (https=)
AT (1) ATE465519T1 (https=)
DE (1) DE60044238D1 (https=)
WO (1) WO2000051186A1 (https=)

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WO2001003208A1 (en) 1999-07-02 2001-01-11 President And Fellows Of Harvard College Nanoscopic wire-based devices, arrays, and methods of their manufacture
EP1299914B1 (de) * 2000-07-04 2008-04-02 Qimonda AG Feldeffekttransistor
DE10036897C1 (de) 2000-07-28 2002-01-03 Infineon Technologies Ag Feldeffekttransistor, Schaltungsanordnung und Verfahren zum Herstellen eines Feldeffekttransistors
WO2003005450A2 (en) * 2001-05-18 2003-01-16 President And Fellows Of Harvard College Nanoscale wires and related devices
US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
KR20030055346A (ko) 2000-12-11 2003-07-02 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 나노센서
JP4676073B2 (ja) * 2001-02-13 2011-04-27 エスアイアイ・ナノテクノロジー株式会社 マスクの白欠陥修正方法
JP2004537174A (ja) * 2001-07-26 2004-12-09 テクニシェ ユニヴェルシテイト デルフト カーボンナノチューブを利用した電子デバイス
AU2002352814A1 (en) 2001-11-20 2003-06-10 Andrew R. Barron Coated fullerenes, composites and dielectrics made therefrom
US6891227B2 (en) 2002-03-20 2005-05-10 International Business Machines Corporation Self-aligned nanotube field effect transistor and method of fabricating same
JP3522261B2 (ja) * 2002-04-18 2004-04-26 日本電気株式会社 ナノチューブ、近接場光検出装置および近接場光検出方法
JP5016190B2 (ja) 2002-05-02 2012-09-05 株式会社イデアルスター 線状素子及びその製造方法
AU2003261205A1 (en) 2002-07-19 2004-02-09 President And Fellows Of Harvard College Nanoscale coherent optical components
DE60334723D1 (de) * 2002-11-19 2010-12-09 Univ Rice William M Feldeffektransistor mit funktionalisierter Kohlenstoffnanoröhre und dessen Herstellungsfervahren
AU2003295721A1 (en) 2002-11-19 2004-06-15 William Marsh Rice University Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission
JP2004235618A (ja) * 2003-01-10 2004-08-19 Sanyo Electric Co Ltd カーボンナノチューブを用いた配線、単一電子トランジスタおよびキャパシタ
EP1508926A1 (en) * 2003-08-19 2005-02-23 Hitachi, Ltd. Nanotube transistor device
DE102004003374A1 (de) * 2004-01-22 2005-08-25 Infineon Technologies Ag Halbleiter-Leistungsschalter sowie dafür geeignetes Herstellungsverfahren
FR2868201B1 (fr) * 2004-03-23 2007-06-29 Ecole Polytechnique Dgar Procede de fabrication de composants electroniques et composants electroniques obtenus par ce procede
KR101100887B1 (ko) * 2005-03-17 2012-01-02 삼성전자주식회사 박막 트랜지스터, 박막 트랜지스터 표시판 및 그 제조 방법
US9102521B2 (en) 2006-06-12 2015-08-11 President And Fellows Of Harvard College Nanosensors and related technologies
US8058640B2 (en) 2006-09-11 2011-11-15 President And Fellows Of Harvard College Branched nanoscale wires
WO2008127314A1 (en) 2006-11-22 2008-10-23 President And Fellows Of Harvard College High-sensitivity nanoscale wire sensors
JP2011523200A (ja) * 2008-04-15 2011-08-04 クナノ アーベー ナノワイヤラップゲートデバイス
US8166819B2 (en) * 2008-07-24 2012-05-01 Northrop Grumman Systems Corporation Standing wave field induced force
JP2012528020A (ja) 2009-05-26 2012-11-12 ナノシス・インク． ナノワイヤおよび他のデバイスの電場沈着のための方法およびシステム
DE102009040916B4 (de) 2009-09-11 2013-01-17 Marko Behrens Faltbecher
US9297796B2 (en) 2009-09-24 2016-03-29 President And Fellows Of Harvard College Bent nanowires and related probing of species
KR101123958B1 (ko) * 2010-04-02 2012-03-23 서울시립대학교 산학협력단 그래핀과 전도체 선들을 이용한 나노 트랜지스터
CN107564946A (zh) * 2016-07-01 2018-01-09 清华大学 纳米晶体管
CN107564917B (zh) * 2016-07-01 2020-06-09 清华大学 纳米异质结构
CN107564947A (zh) * 2016-07-01 2018-01-09 清华大学 纳米异质结构
CN107564910B (zh) * 2016-07-01 2020-08-11 清华大学 半导体器件

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JPH07118270B2 (ja) * 1993-10-25 1995-12-18 日本電気株式会社 カーボンナノチューブトランジスタ
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Also Published As

Publication number Publication date
KR20020001730A (ko) 2002-01-09
EP1159761B1 (en) 2010-04-21
JP2002538606A (ja) 2002-11-12
KR20040062667A (ko) 2004-07-07
EP1159761A1 (en) 2001-12-05
DE60044238D1 (de) 2010-06-02
ATE465519T1 (de) 2010-05-15
JP4039600B2 (ja) 2008-01-30
JP2006231513A (ja) 2006-09-07
WO2000051186A1 (en) 2000-08-31
JP4512054B2 (ja) 2010-07-28
EP1159761A4 (en) 2006-04-19
KR100636951B1 (ko) 2006-10-19

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