JP4039600B2 - ナノ構造デバイス及び装置 - Google Patents

ナノ構造デバイス及び装置 Download PDF

Info

Publication number
JP4039600B2
JP4039600B2 JP2000601693A JP2000601693A JP4039600B2 JP 4039600 B2 JP4039600 B2 JP 4039600B2 JP 2000601693 A JP2000601693 A JP 2000601693A JP 2000601693 A JP2000601693 A JP 2000601693A JP 4039600 B2 JP4039600 B2 JP 4039600B2
Authority
JP
Japan
Prior art keywords
gating
nanotube
nanotubes
nanodevice
external
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000601693A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002538606A (ja
JP2002538606A5 (https=
Inventor
クラウソン、ジョセフ、イー、ジュニア
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of JP2002538606A publication Critical patent/JP2002538606A/ja
Publication of JP2002538606A5 publication Critical patent/JP2002538606A5/ja
Application granted granted Critical
Publication of JP4039600B2 publication Critical patent/JP4039600B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/18—Memory cell being a nanowire having RADIAL composition
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Composite Materials (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Inorganic Insulating Materials (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thermistors And Varistors (AREA)
JP2000601693A 1999-02-22 2000-02-18 ナノ構造デバイス及び装置 Expired - Fee Related JP4039600B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US25350699A 1999-02-22 1999-02-22
US09/253,506 1999-02-22
PCT/US2000/004220 WO2000051186A1 (en) 1999-02-22 2000-02-18 Nanostructure device and apparatus

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006063385A Division JP4512054B2 (ja) 1999-02-22 2006-03-08 ナノチューブの分離およびアラインメント用装置及び、原子顕微鏡の位置合わせ装置

Publications (3)

Publication Number Publication Date
JP2002538606A JP2002538606A (ja) 2002-11-12
JP2002538606A5 JP2002538606A5 (https=) 2007-03-08
JP4039600B2 true JP4039600B2 (ja) 2008-01-30

Family

ID=22960568

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2000601693A Expired - Fee Related JP4039600B2 (ja) 1999-02-22 2000-02-18 ナノ構造デバイス及び装置
JP2006063385A Expired - Fee Related JP4512054B2 (ja) 1999-02-22 2006-03-08 ナノチューブの分離およびアラインメント用装置及び、原子顕微鏡の位置合わせ装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2006063385A Expired - Fee Related JP4512054B2 (ja) 1999-02-22 2006-03-08 ナノチューブの分離およびアラインメント用装置及び、原子顕微鏡の位置合わせ装置

Country Status (6)

Country Link
EP (1) EP1159761B1 (https=)
JP (2) JP4039600B2 (https=)
KR (2) KR100679547B1 (https=)
AT (1) ATE465519T1 (https=)
DE (1) DE60044238D1 (https=)
WO (1) WO2000051186A1 (https=)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001003208A1 (en) 1999-07-02 2001-01-11 President And Fellows Of Harvard College Nanoscopic wire-based devices, arrays, and methods of their manufacture
EP1299914B1 (de) * 2000-07-04 2008-04-02 Qimonda AG Feldeffekttransistor
DE10036897C1 (de) 2000-07-28 2002-01-03 Infineon Technologies Ag Feldeffekttransistor, Schaltungsanordnung und Verfahren zum Herstellen eines Feldeffekttransistors
WO2003005450A2 (en) * 2001-05-18 2003-01-16 President And Fellows Of Harvard College Nanoscale wires and related devices
US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
KR20030055346A (ko) 2000-12-11 2003-07-02 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 나노센서
JP4676073B2 (ja) * 2001-02-13 2011-04-27 エスアイアイ・ナノテクノロジー株式会社 マスクの白欠陥修正方法
JP2004537174A (ja) * 2001-07-26 2004-12-09 テクニシェ ユニヴェルシテイト デルフト カーボンナノチューブを利用した電子デバイス
AU2002352814A1 (en) 2001-11-20 2003-06-10 Andrew R. Barron Coated fullerenes, composites and dielectrics made therefrom
US6891227B2 (en) 2002-03-20 2005-05-10 International Business Machines Corporation Self-aligned nanotube field effect transistor and method of fabricating same
JP3522261B2 (ja) * 2002-04-18 2004-04-26 日本電気株式会社 ナノチューブ、近接場光検出装置および近接場光検出方法
JP5016190B2 (ja) 2002-05-02 2012-09-05 株式会社イデアルスター 線状素子及びその製造方法
AU2003261205A1 (en) 2002-07-19 2004-02-09 President And Fellows Of Harvard College Nanoscale coherent optical components
DE60334723D1 (de) * 2002-11-19 2010-12-09 Univ Rice William M Feldeffektransistor mit funktionalisierter Kohlenstoffnanoröhre und dessen Herstellungsfervahren
AU2003295721A1 (en) 2002-11-19 2004-06-15 William Marsh Rice University Fabrication of light emitting film coated fullerenes and their application for in-vivo light emission
JP2004235618A (ja) * 2003-01-10 2004-08-19 Sanyo Electric Co Ltd カーボンナノチューブを用いた配線、単一電子トランジスタおよびキャパシタ
EP1508926A1 (en) * 2003-08-19 2005-02-23 Hitachi, Ltd. Nanotube transistor device
DE102004003374A1 (de) * 2004-01-22 2005-08-25 Infineon Technologies Ag Halbleiter-Leistungsschalter sowie dafür geeignetes Herstellungsverfahren
FR2868201B1 (fr) * 2004-03-23 2007-06-29 Ecole Polytechnique Dgar Procede de fabrication de composants electroniques et composants electroniques obtenus par ce procede
KR101100887B1 (ko) * 2005-03-17 2012-01-02 삼성전자주식회사 박막 트랜지스터, 박막 트랜지스터 표시판 및 그 제조 방법
US9102521B2 (en) 2006-06-12 2015-08-11 President And Fellows Of Harvard College Nanosensors and related technologies
US8058640B2 (en) 2006-09-11 2011-11-15 President And Fellows Of Harvard College Branched nanoscale wires
WO2008127314A1 (en) 2006-11-22 2008-10-23 President And Fellows Of Harvard College High-sensitivity nanoscale wire sensors
JP2011523200A (ja) * 2008-04-15 2011-08-04 クナノ アーベー ナノワイヤラップゲートデバイス
US8166819B2 (en) * 2008-07-24 2012-05-01 Northrop Grumman Systems Corporation Standing wave field induced force
JP2012528020A (ja) 2009-05-26 2012-11-12 ナノシス・インク． ナノワイヤおよび他のデバイスの電場沈着のための方法およびシステム
DE102009040916B4 (de) 2009-09-11 2013-01-17 Marko Behrens Faltbecher
US9297796B2 (en) 2009-09-24 2016-03-29 President And Fellows Of Harvard College Bent nanowires and related probing of species
KR101123958B1 (ko) * 2010-04-02 2012-03-23 서울시립대학교 산학협력단 그래핀과 전도체 선들을 이용한 나노 트랜지스터
CN107564946A (zh) * 2016-07-01 2018-01-09 清华大学 纳米晶体管
CN107564917B (zh) * 2016-07-01 2020-06-09 清华大学 纳米异质结构
CN107564947A (zh) * 2016-07-01 2018-01-09 清华大学 纳米异质结构
CN107564910B (zh) * 2016-07-01 2020-08-11 清华大学 半导体器件

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62160688A (ja) * 1986-01-08 1987-07-16 株式会社東芝 誘導加熱調理器
AT390739B (de) * 1988-11-03 1990-06-25 Ewald Dipl Ing Dr Benes Verfahren und einrichtung zur separation von teilchen, welche in einem dispersionsmittel dispergiert sind
JPH04329836A (ja) * 1991-04-30 1992-11-18 Daiki Alum Kogyosho:Kk アルミニウムスクラップの前処理方法
JPH07118270B2 (ja) * 1993-10-25 1995-12-18 日本電気株式会社 カーボンナノチューブトランジスタ
EP0783662B1 (en) * 1994-08-27 1999-04-07 International Business Machines Corporation Fine positioning apparatus with atomic resolution
JP2700058B2 (ja) * 1996-01-23 1998-01-19 工業技術院長 超音波を用いた非接触マイクロマニピュレーション方法
JP2000516708A (ja) * 1996-08-08 2000-12-12 ウィリアム・マーシュ・ライス・ユニバーシティ ナノチューブ組立体から作製された巨視的操作可能なナノ規模の装置
KR100277881B1 (ko) * 1998-06-16 2001-02-01 김영환 트랜지스터

Also Published As

Publication number Publication date
KR100679547B1 (ko) 2007-02-07
KR20020001730A (ko) 2002-01-09
EP1159761B1 (en) 2010-04-21
JP2002538606A (ja) 2002-11-12
KR20040062667A (ko) 2004-07-07
EP1159761A1 (en) 2001-12-05
DE60044238D1 (de) 2010-06-02
ATE465519T1 (de) 2010-05-15
JP2006231513A (ja) 2006-09-07
WO2000051186A1 (en) 2000-08-31
JP4512054B2 (ja) 2010-07-28
EP1159761A4 (en) 2006-04-19
KR100636951B1 (ko) 2006-10-19

Similar Documents

Publication Publication Date Title
JP4039600B2 (ja) ナノ構造デバイス及び装置
Cui et al. Nanogap electrodes towards solid state single‐molecule transistors
JP4140180B2 (ja) トランジスタ
Krahne et al. Fabrication of nanoscale gaps in integrated circuits
US5365073A (en) Nanofabricated structures
US7067341B2 (en) Single electron transistor manufacturing method by electro-migration of metallic nanoclusters
Clifford et al. Electrostatics of partially gated carbon nanotube FETs
JP2006520092A (ja) 導電性炭素から成る量子ドット、この製造のための方法及び使用
US8455311B2 (en) Solid state klystron
WO2001008193A1 (en) Vacuum field-effect device and fabrication process therefor
Hidehiro Nishijima et al. Novel process for fabricating nanodevices consisting of carbon nanotubes
US8031514B2 (en) Bistable nanoswitch
EP1743381B1 (en) Electromechanical electron transfer devices
Gurevich et al. Scanning gate spectroscopy on nanoclusters
CN112542510B (zh) 基于碳纳米管的自旋场效应晶体管及其制备方法
WO2008147432A2 (en) Method of assembling one-dimensional nanostructures
JP7705676B2 (ja) 量子構成要素
KR101128015B1 (ko) 단일 나노 채널 형성 방법
JPH06334177A (ja) マイクロエレクトロニック回路構造及びその製造方法
KR100796280B1 (ko) 디엔에이를 이용한 규비트의 제조 방법
RU2307786C1 (ru) Способ формирования планарных молекулярных проводников в полимерной матрице
Chen et al. Assembly of a CNT-FET based on nanorobotic manipulation system inside a SEM
Bułka Electronic Transport Through Magnetic Molecular Nanostructures
MATSUMOTO et al. Single electron devices with various structures made by STM/AFM nano-oxidation process

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050908

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20051205

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20051212

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060308

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060802

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20061018

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20061025

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070116

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20070116

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070327

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20070622

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20070629

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20070725

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070730

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20070801

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20071031

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20071102

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101116

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101116

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121116

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131116

Year of fee payment: 6

LAPS Cancellation because of no payment of annual fees