FR2868201B1 - Procede de fabrication de composants electroniques et composants electroniques obtenus par ce procede - Google Patents

Procede de fabrication de composants electroniques et composants electroniques obtenus par ce procede

Info

Publication number
FR2868201B1
FR2868201B1 FR0402998A FR0402998A FR2868201B1 FR 2868201 B1 FR2868201 B1 FR 2868201B1 FR 0402998 A FR0402998 A FR 0402998A FR 0402998 A FR0402998 A FR 0402998A FR 2868201 B1 FR2868201 B1 FR 2868201B1
Authority
FR
France
Prior art keywords
electronic components
manufacturing
components obtained
manufacturing electronic
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0402998A
Other languages
English (en)
Other versions
FR2868201A1 (fr
Inventor
Travis Wade
Jean Eric Wegrowe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ecole Polytechnique
Original Assignee
Ecole Polytechnique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ecole Polytechnique filed Critical Ecole Polytechnique
Priority to FR0402998A priority Critical patent/FR2868201B1/fr
Priority to US10/599,127 priority patent/US7765690B2/en
Priority to EP05742718A priority patent/EP1730796A1/fr
Priority to KR1020067019635A priority patent/KR20070004766A/ko
Priority to PCT/FR2005/000682 priority patent/WO2005098989A1/fr
Publication of FR2868201A1 publication Critical patent/FR2868201A1/fr
Application granted granted Critical
Publication of FR2868201B1 publication Critical patent/FR2868201B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/12—Anodising more than once, e.g. in different baths
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/18—After-treatment, e.g. pore-sealing
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/18—After-treatment, e.g. pore-sealing
    • C25D11/20—Electrolytic after-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N99/00—Subject matter not provided for in other groups of this subclass
    • H10N99/05—Devices based on quantum mechanical effects, e.g. quantum interference devices or metal single-electron transistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49014—Superconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49016—Antenna or wave energy "plumbing" making
    • Y10T29/49018—Antenna or wave energy "plumbing" making with other electrical component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49453—Pulley making
    • Y10T29/49455—Assembly
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/496—Multiperforated metal article making

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Catalysts (AREA)
FR0402998A 2004-03-23 2004-03-23 Procede de fabrication de composants electroniques et composants electroniques obtenus par ce procede Expired - Fee Related FR2868201B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0402998A FR2868201B1 (fr) 2004-03-23 2004-03-23 Procede de fabrication de composants electroniques et composants electroniques obtenus par ce procede
US10/599,127 US7765690B2 (en) 2004-03-23 2005-03-21 Process for fabricating electronic components and electronic components obtained by this process
EP05742718A EP1730796A1 (fr) 2004-03-23 2005-03-21 Procede de fabrication de composants electroniques et composants electroniques obtenus par ce procede
KR1020067019635A KR20070004766A (ko) 2004-03-23 2005-03-21 전자 컴포넌트의 제조 방법 및 이에 의해 제조된 전자컴포넌트
PCT/FR2005/000682 WO2005098989A1 (fr) 2004-03-23 2005-03-21 Procede de fabrication de composants electroniques et composants electroniques obtenus par ce procede

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0402998A FR2868201B1 (fr) 2004-03-23 2004-03-23 Procede de fabrication de composants electroniques et composants electroniques obtenus par ce procede

Publications (2)

Publication Number Publication Date
FR2868201A1 FR2868201A1 (fr) 2005-09-30
FR2868201B1 true FR2868201B1 (fr) 2007-06-29

Family

ID=34944775

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0402998A Expired - Fee Related FR2868201B1 (fr) 2004-03-23 2004-03-23 Procede de fabrication de composants electroniques et composants electroniques obtenus par ce procede

Country Status (5)

Country Link
US (1) US7765690B2 (fr)
EP (1) EP1730796A1 (fr)
KR (1) KR20070004766A (fr)
FR (1) FR2868201B1 (fr)
WO (1) WO2005098989A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4708861B2 (ja) * 2005-05-25 2011-06-22 キヤノン株式会社 電界効果型トランジスタの製造方法
RU2624573C2 (ru) * 2015-11-03 2017-07-04 Федеральное государственное бюджетное образовательное учреждение высшего образования "Российский химико-технологический университет имени Д.И. Менделеева (РХТУ им. Д.И. Менделеева) Способ изготовления массивов кобальтовых нанопроволок
CN108933171B (zh) * 2017-05-24 2020-06-09 清华大学 半导体结构及半导体器件

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8426264D0 (en) * 1984-10-17 1984-11-21 Alcan Int Ltd Porous films
GB8922069D0 (en) * 1989-09-29 1989-11-15 Alcan Int Ltd Separation devices incorporating porous anodic films
ATE465519T1 (de) * 1999-02-22 2010-05-15 Clawson Joseph E Jr Elektronisches bauteil auf basis von nanostrukturen
US6325909B1 (en) * 1999-09-24 2001-12-04 The Governing Council Of The University Of Toronto Method of growth of branched carbon nanotubes and devices produced from the branched nanotubes
DE10036897C1 (de) * 2000-07-28 2002-01-03 Infineon Technologies Ag Feldeffekttransistor, Schaltungsanordnung und Verfahren zum Herstellen eines Feldeffekttransistors
CN101887935B (zh) * 2000-08-22 2013-09-11 哈佛学院董事会 掺杂的拉长半导体,其生长,包含这类半导体的器件及其制造
KR100493166B1 (ko) * 2002-12-30 2005-06-02 삼성전자주식회사 수직나노튜브를 이용한 메모리
FR2860780B1 (fr) 2003-10-13 2006-05-19 Centre Nat Rech Scient Procede de synthese de structures filamentaires nanometriques et composants pour l'electronique comprenant de telles structures

Also Published As

Publication number Publication date
FR2868201A1 (fr) 2005-09-30
WO2005098989A1 (fr) 2005-10-20
US20070281385A1 (en) 2007-12-06
EP1730796A1 (fr) 2006-12-13
US7765690B2 (en) 2010-08-03
KR20070004766A (ko) 2007-01-09

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Legal Events

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ST Notification of lapse

Effective date: 20121130