JP2002535719A - レーザー記録方法およびシステム - Google Patents
レーザー記録方法およびシステムInfo
- Publication number
- JP2002535719A JP2002535719A JP2000595202A JP2000595202A JP2002535719A JP 2002535719 A JP2002535719 A JP 2002535719A JP 2000595202 A JP2000595202 A JP 2000595202A JP 2000595202 A JP2000595202 A JP 2000595202A JP 2002535719 A JP2002535719 A JP 2002535719A
- Authority
- JP
- Japan
- Prior art keywords
- writing
- error condition
- detector
- error
- interrupted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 49
- 230000008569 process Effects 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000011084 recovery Methods 0.000 claims description 14
- 230000002159 abnormal effect Effects 0.000 claims description 12
- 238000001514 detection method Methods 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 3
- 230000005856 abnormality Effects 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims description 2
- 230000004044 response Effects 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 2
- 230000002547 anomalous effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9900170-3 | 1999-01-21 | ||
| SE9900170A SE514835C2 (sv) | 1999-01-21 | 1999-01-21 | System och metod för mikrolitografiskt skrivande |
| PCT/SE2000/000136 WO2000043838A1 (en) | 1999-01-21 | 2000-01-21 | Laser writer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002535719A true JP2002535719A (ja) | 2002-10-22 |
| JP2002535719A5 JP2002535719A5 (https=) | 2007-01-11 |
Family
ID=20414167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000595202A Pending JP2002535719A (ja) | 1999-01-21 | 2000-01-21 | レーザー記録方法およびシステム |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6624878B1 (https=) |
| JP (1) | JP2002535719A (https=) |
| AU (1) | AU2340400A (https=) |
| SE (1) | SE514835C2 (https=) |
| WO (1) | WO2000043838A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013038397A (ja) * | 2011-07-08 | 2013-02-21 | Nuflare Technology Inc | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050002090A1 (en) * | 1998-05-05 | 2005-01-06 | Carl Zeiss Smt Ag | EUV illumination system having a folding geometry |
| DE10138313A1 (de) * | 2001-01-23 | 2002-07-25 | Zeiss Carl | Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm |
| SE518170C2 (sv) * | 2000-06-27 | 2002-09-03 | Micronic Laser Systems Ab | Flerstrålemönstergenerator och metod för skannande |
| SE0200547D0 (sv) * | 2002-02-25 | 2002-02-25 | Micronic Laser Systems Ab | An image forming method and apparatus |
| JP2007052080A (ja) * | 2005-08-15 | 2007-03-01 | Fujifilm Holdings Corp | 描画装置、露光装置、および描画方法 |
| US20090199152A1 (en) * | 2008-02-06 | 2009-08-06 | Micronic Laser Systems Ab | Methods and apparatuses for reducing mura effects in generated patterns |
| KR102721673B1 (ko) | 2015-08-31 | 2024-10-25 | 리톱텍 엘엘씨 | 막 또는 표면 수정을 위하여 주사 광 빔을 이용하기 위한 장치 및 방법 |
| US11914305B2 (en) * | 2020-02-18 | 2024-02-27 | Applied Materials, Inc. | Data inspection for digital lithography for HVM using offline and inline approach |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2030468A5 (https=) * | 1969-01-29 | 1970-11-13 | Thomson Brandt Csf | |
| US4313188A (en) * | 1976-03-19 | 1982-01-26 | Rca Corporation | Method of recording an ablative optical recording medium |
| US4218142A (en) * | 1978-03-08 | 1980-08-19 | Aerodyne Research, Inc. | Mask analysis |
| JPS5862630A (ja) * | 1981-10-08 | 1983-04-14 | Sony Corp | 光変調装置 |
| US4464030A (en) * | 1982-03-26 | 1984-08-07 | Rca Corporation | Dynamic accuracy X-Y positioning table for use in a high precision light-spot writing system |
| JPS5928337A (ja) * | 1982-08-09 | 1984-02-15 | Hitachi Ltd | プロジエクシヨンアライナ |
| JP2797503B2 (ja) * | 1989-08-28 | 1998-09-17 | 日本電気株式会社 | プッシュプル昇圧コンバータのパルス幅変調回路 |
| DE4022732A1 (de) * | 1990-07-17 | 1992-02-20 | Micronic Laser Systems Ab | Auf einem lichtempfindlich beschichteten substrat durch fokussierte laserstrahlung hergestellte struktur sowie verfahren und vorrichtung zu ihrer herstellung |
| EP0558781B1 (en) * | 1992-03-05 | 1998-08-05 | Micronic Laser Systems Ab | Method and apparatus for exposure of substrates |
| US5315111A (en) * | 1992-10-15 | 1994-05-24 | Lasa Industries, Inc. | Method and apparatus for laser beam drift compensation |
| US5477304A (en) | 1992-10-22 | 1995-12-19 | Nikon Corporation | Projection exposure apparatus |
| JPH0725061A (ja) * | 1993-07-09 | 1995-01-27 | Matsushita Electric Ind Co Ltd | 印字装置 |
| JP3647121B2 (ja) * | 1996-01-04 | 2005-05-11 | キヤノン株式会社 | 走査露光装置および方法、ならびにデバイス製造方法 |
-
1999
- 1999-01-21 SE SE9900170A patent/SE514835C2/sv not_active IP Right Cessation
-
2000
- 2000-01-21 AU AU23404/00A patent/AU2340400A/en not_active Abandoned
- 2000-01-21 WO PCT/SE2000/000136 patent/WO2000043838A1/en not_active Ceased
- 2000-01-21 US US09/869,922 patent/US6624878B1/en not_active Expired - Lifetime
- 2000-01-21 JP JP2000595202A patent/JP2002535719A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013038397A (ja) * | 2011-07-08 | 2013-02-21 | Nuflare Technology Inc | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| SE514835C2 (sv) | 2001-04-30 |
| SE9900170L (sv) | 2000-07-22 |
| AU2340400A (en) | 2000-08-07 |
| WO2000043838A1 (en) | 2000-07-27 |
| SE9900170D0 (sv) | 1999-01-21 |
| US6624878B1 (en) | 2003-09-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6909372B2 (en) | Power monitoring unit, control method therefor, and exposure apparatus | |
| US10739684B2 (en) | Lithographic apparatus and device manufacturing method | |
| JP6965884B2 (ja) | 基板処理装置および基板処理方法 | |
| US8902399B2 (en) | Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus | |
| US6940584B2 (en) | Exposure apparatus, maintenance method therefor, semiconductor device manufacturing method, and semiconductor manufacturing factory | |
| JP2002535719A (ja) | レーザー記録方法およびシステム | |
| JP6571233B2 (ja) | リソグラフィ方法および装置 | |
| JP2003028673A (ja) | 光学式エンコーダ、半導体製造装置、デバイス製造方法、半導体製造工場および半導体製造装置の保守方法 | |
| JPH03212925A (ja) | 露光装置 | |
| US6650354B2 (en) | Image recorder having diagnostic capability | |
| JP2007243168A (ja) | リソグラフィ装置におけるソフトウェアアップグレード | |
| JP3050746B2 (ja) | レーザリペア装置及びその位置チェック方法 | |
| JPS5840826A (ja) | 荷電ビ−ム露光方法 | |
| JP4938878B2 (ja) | リソグラフィ装置、位置決めシステム、及び位置決め方法 | |
| JP3265665B2 (ja) | 投影露光装置、露光方法、及び素子製造方法 | |
| JP2549847B2 (ja) | 半導体装置の製造方法とこれに使用するパタ−ンパタ−ン寸法測定装置 | |
| JP3107958B2 (ja) | 露光装置 | |
| JP2759898B2 (ja) | フィルム露光装置における焦点検出方法 | |
| KR20080018684A (ko) | 반도체 제조설비 및 그를 이용한 웨이퍼 정렬방법 | |
| JP3647121B2 (ja) | 走査露光装置および方法、ならびにデバイス製造方法 | |
| JP2686637B2 (ja) | 露光装置の監視方法 | |
| JP2001143995A (ja) | 露光装置 | |
| TW202443302A (zh) | 資料傳送裝置、曝光裝置及電子元件 | |
| JP2632416B2 (ja) | 露光装置 | |
| Speidell et al. | Improved excimer laser pattern generator for photomask fabrication |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20061114 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20061114 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20090723 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090803 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20100105 |