JP2002535719A - レーザー記録方法およびシステム - Google Patents
レーザー記録方法およびシステムInfo
- Publication number
- JP2002535719A JP2002535719A JP2000595202A JP2000595202A JP2002535719A JP 2002535719 A JP2002535719 A JP 2002535719A JP 2000595202 A JP2000595202 A JP 2000595202A JP 2000595202 A JP2000595202 A JP 2000595202A JP 2002535719 A JP2002535719 A JP 2002535719A
- Authority
- JP
- Japan
- Prior art keywords
- writing
- error condition
- detector
- error
- interrupted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 49
- 230000008569 process Effects 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000011084 recovery Methods 0.000 claims description 14
- 230000002159 abnormal effect Effects 0.000 claims description 12
- 238000001514 detection method Methods 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 3
- 230000005856 abnormality Effects 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims description 2
- 230000004044 response Effects 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 2
- 230000002547 anomalous effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9900170A SE514835C2 (sv) | 1999-01-21 | 1999-01-21 | System och metod för mikrolitografiskt skrivande |
| SE9900170-3 | 1999-01-21 | ||
| PCT/SE2000/000136 WO2000043838A1 (en) | 1999-01-21 | 2000-01-21 | Laser writer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002535719A true JP2002535719A (ja) | 2002-10-22 |
| JP2002535719A5 JP2002535719A5 (enExample) | 2007-01-11 |
Family
ID=20414167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000595202A Pending JP2002535719A (ja) | 1999-01-21 | 2000-01-21 | レーザー記録方法およびシステム |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6624878B1 (enExample) |
| JP (1) | JP2002535719A (enExample) |
| AU (1) | AU2340400A (enExample) |
| SE (1) | SE514835C2 (enExample) |
| WO (1) | WO2000043838A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013038397A (ja) * | 2011-07-08 | 2013-02-21 | Nuflare Technology Inc | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10138313A1 (de) * | 2001-01-23 | 2002-07-25 | Zeiss Carl | Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm |
| US20050002090A1 (en) * | 1998-05-05 | 2005-01-06 | Carl Zeiss Smt Ag | EUV illumination system having a folding geometry |
| SE518170C2 (sv) * | 2000-06-27 | 2002-09-03 | Micronic Laser Systems Ab | Flerstrålemönstergenerator och metod för skannande |
| SE0200547D0 (sv) * | 2002-02-25 | 2002-02-25 | Micronic Laser Systems Ab | An image forming method and apparatus |
| JP2007052080A (ja) * | 2005-08-15 | 2007-03-01 | Fujifilm Holdings Corp | 描画装置、露光装置、および描画方法 |
| US20090199152A1 (en) * | 2008-02-06 | 2009-08-06 | Micronic Laser Systems Ab | Methods and apparatuses for reducing mura effects in generated patterns |
| WO2017040639A1 (en) | 2015-08-31 | 2017-03-09 | Lithoptek LLC | Apparatus and method for using scanning light beam for film or surface modification |
| WO2021167587A1 (en) * | 2020-02-18 | 2021-08-26 | Applied Materials, Inc. | Data inspection for digital lithography for hvm using offline and inline approach |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2030468A5 (enExample) * | 1969-01-29 | 1970-11-13 | Thomson Brandt Csf | |
| US4313188A (en) * | 1976-03-19 | 1982-01-26 | Rca Corporation | Method of recording an ablative optical recording medium |
| US4218142A (en) | 1978-03-08 | 1980-08-19 | Aerodyne Research, Inc. | Mask analysis |
| JPS5862630A (ja) * | 1981-10-08 | 1983-04-14 | Sony Corp | 光変調装置 |
| US4464030A (en) * | 1982-03-26 | 1984-08-07 | Rca Corporation | Dynamic accuracy X-Y positioning table for use in a high precision light-spot writing system |
| JPS5928337A (ja) * | 1982-08-09 | 1984-02-15 | Hitachi Ltd | プロジエクシヨンアライナ |
| JP2797503B2 (ja) * | 1989-08-28 | 1998-09-17 | 日本電気株式会社 | プッシュプル昇圧コンバータのパルス幅変調回路 |
| DE4022732A1 (de) * | 1990-07-17 | 1992-02-20 | Micronic Laser Systems Ab | Auf einem lichtempfindlich beschichteten substrat durch fokussierte laserstrahlung hergestellte struktur sowie verfahren und vorrichtung zu ihrer herstellung |
| EP0558781B1 (en) * | 1992-03-05 | 1998-08-05 | Micronic Laser Systems Ab | Method and apparatus for exposure of substrates |
| US5315111A (en) * | 1992-10-15 | 1994-05-24 | Lasa Industries, Inc. | Method and apparatus for laser beam drift compensation |
| US5477304A (en) * | 1992-10-22 | 1995-12-19 | Nikon Corporation | Projection exposure apparatus |
| JPH0725061A (ja) * | 1993-07-09 | 1995-01-27 | Matsushita Electric Ind Co Ltd | 印字装置 |
| JP3647121B2 (ja) * | 1996-01-04 | 2005-05-11 | キヤノン株式会社 | 走査露光装置および方法、ならびにデバイス製造方法 |
-
1999
- 1999-01-21 SE SE9900170A patent/SE514835C2/sv not_active IP Right Cessation
-
2000
- 2000-01-21 AU AU23404/00A patent/AU2340400A/en not_active Abandoned
- 2000-01-21 US US09/869,922 patent/US6624878B1/en not_active Expired - Lifetime
- 2000-01-21 WO PCT/SE2000/000136 patent/WO2000043838A1/en not_active Ceased
- 2000-01-21 JP JP2000595202A patent/JP2002535719A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013038397A (ja) * | 2011-07-08 | 2013-02-21 | Nuflare Technology Inc | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US6624878B1 (en) | 2003-09-23 |
| SE9900170L (sv) | 2000-07-22 |
| AU2340400A (en) | 2000-08-07 |
| WO2000043838A1 (en) | 2000-07-27 |
| SE514835C2 (sv) | 2001-04-30 |
| SE9900170D0 (sv) | 1999-01-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6965884B2 (ja) | 基板処理装置および基板処理方法 | |
| US20040056665A1 (en) | Power monitoring unit, control method therefor, and exposure apparatus | |
| US8902399B2 (en) | Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus | |
| US20190317411A1 (en) | Lithographic apparatus and device manufacturing method | |
| US6940584B2 (en) | Exposure apparatus, maintenance method therefor, semiconductor device manufacturing method, and semiconductor manufacturing factory | |
| JP2002535719A (ja) | レーザー記録方法およびシステム | |
| KR100525287B1 (ko) | 리소그래피 장치, 디바이스 제조방법 및 그에 따라 제조된디바이스 | |
| JP2003028673A (ja) | 光学式エンコーダ、半導体製造装置、デバイス製造方法、半導体製造工場および半導体製造装置の保守方法 | |
| US6650354B2 (en) | Image recorder having diagnostic capability | |
| JP3050746B2 (ja) | レーザリペア装置及びその位置チェック方法 | |
| JPH10177950A (ja) | ステージ装置及び投影光学装置 | |
| JP4938878B2 (ja) | リソグラフィ装置、位置決めシステム、及び位置決め方法 | |
| JP3265665B2 (ja) | 投影露光装置、露光方法、及び素子製造方法 | |
| JP3107958B2 (ja) | 露光装置 | |
| Wurm | Lithography Development and Research Challenges for the= 22 nm Half-pitch | |
| JP3647121B2 (ja) | 走査露光装置および方法、ならびにデバイス製造方法 | |
| KR20080018684A (ko) | 반도체 제조설비 및 그를 이용한 웨이퍼 정렬방법 | |
| JP2001143995A (ja) | 露光装置 | |
| TW202443302A (zh) | 資料傳送裝置、曝光裝置及電子元件 | |
| JP2632416B2 (ja) | 露光装置 | |
| JP2000173897A (ja) | 露光精度制御方法、装置および記録媒体 | |
| JP2005072259A (ja) | 基板処理装置及びエラー処理方法 | |
| JP2000286188A (ja) | 露光装置、基板履歴保持装置および基板履歴保持プログラムを記憶した記憶媒体 | |
| JPS61263222A (ja) | 走査型描画装置 | |
| Speidell et al. | Improved excimer laser pattern generator for photomask fabrication |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20061114 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20061114 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20090723 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090803 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20100105 |